6N1135/6N1136
Vishay Semiconductors
High Speed Optocoupler, 1 MBd,
Photodiode with Transistor Output, 110 °C Rated
FEATURES
• Operating temperature from - 55 °C to + 110 °C
• Isolation test voltages: 5300 V
RMS
• TTL compatible
NC
A
C
NC
i179081
1
2
3
4
8
7
6
5
C (V
CC
)
B (V
B
)
C (V
O
)
E (GND)
• High bit rates: 1.0 MBd
• Bandwidth 2.0 MHz
• Open-collector output
• External base wiring possible
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
DESCRIPTION
The 6N1135 and 6N1136 are 110 °C rated optocouplers with
a GaAIAs infrared emitting diode, optically coupled with an
integrated photo detector which consists of a photo diode
and a high-speed transistor in a DIP-8 plastic package.
Signals can be transmitted between two electrically
separated circuits up to frequencies of 2.0 MHz. The
potential difference between the circuits to be coupled
should not exceed the maximum permissible reference
voltages.
AGENCY APPROVALS
• UL1577, file no. E52744 system code H or J
• DIN EN 60747-5-5
• CUL - file no. E52744, equivalent to CSA bulletin 5A
ORDER INFORMATION
PART
6N1135
6N1136
6N1135-X007
6N1136-X006
6N1136-X007
6N1136-X009
Note
For additional information on the available options refer to option information.
REMARKS
CTR
≥
7 %, DIP-8
CTR
≥
19 %, DIP-8
CTR
≥
7 %, SMD-8 (option 7)
CTR
≥
19 %, DIP-8 400 mil (option 6)
CTR
≥
19 %, SMD-8 (option 7)
CTR
≥
19 %, SMD-8 (option 9)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Reverse voltage
Forward current
Peak forward current
Maximum surge forward current
Thermal resistance
Power dissipation
OUTPUT
Supply voltage
Output voltage
Emitter base voltage
Output current
Maximum Output current
Base current
Thermal resistance
Power dissipation
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160
(1)
TEST CONDITION
SYMBOL
V
R
I
F
VALUE
5.0
25
50
1.0
700
45
- 0.5 to 15
- 0.5 to 15
5.0
8.0
16
5.0
300
100
UNIT
V
mA
mA
A
K/W
mW
V
V
V
mA
mA
mA
K/W
mW
Document Number: 83909
Rev. 1.6, 07-May-08
t = 1.0 ms, duty cycle 50 %
t
≤
1.0 µs, 300 pulses/s
T
amb
= 70 °C
I
FM
I
FSM
R
th
P
diss
V
CC
V
O
V
EBO
I
O
I
B
T
amb
= 70 °C
P
diss
For technical questions, contact: optocoupler.answers@vishay.com
6N1135/6N1136
High Speed Optocoupler, 1 MBd,
Vishay Semiconductors
Photodiode with Transistor Output, 110 °C
Rated
ABSOLUTE MAXIMUM RATINGS
PARAMETER
COUPLER
Isolation test voltage (between
emitter and detector climate per
DIN 50014 part 2, Nov. 74)
Storage temperature range
Ambient temperature range
Soldering temperature
(2)
max.
≤
10 s, dip soldering
≥
0.5 mm from case bottom
t = 1.0 s
V
ISO
T
stg
T
amb
T
sld
5300
- 55 to + 125
- 55 to + 100
260
V
RMS
°C
°C
°C
(1)
TEST CONDITION
SYMBOL
VALUE
UNIT
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Temperature coefficient,
forward voltage
OUTPUT
Logic low supply current
Logic high supply current
I
F
= 1.6 mA, V
O
= open,
V
CC
= 15 V
I
F
= 0 mA, V
O
= open,
V
CC
= 15 V
I
F
= 16 mA, V
CC
= 4.5 V,
I
O
= 1.1 mA,
I
F
= 16 mA, V
CC
= 4.5 V,
I
O
= 2.4 mA,
I
F
= 0 mA, V
O
= V
CC
= 5.5 V
I
F
= 0 mA, V
O
= V
CC
= 15 V
f = 1.0 MHz
I
F
= 16 mA, V
O
= 0.4 V,
V
CC
= 4.5 V
I
F
= 16 mA, V
O
= 0.5 V,
V
CC
= 4.5 V
6N1135
6N1136
6N1135
6N1136
6N1135
6N1136
I
CCL
I
CCH
V
OL
V
OL
I
OH
I
OH
C
IO
CTR
CTR
CTR
CTR
7.0
19
5.0
15
150
0.01
0.1
0.1
3.0
0.01
0.6
16
35
1
0.4
0.4
500
1
µA
µA
V
V
nA
µA
pF
%
%
%
%
I
F
= 1.6 mA
I
R
= 10 µA
V
R
= 5.0 V
V
R
= 0 V, f = 1.0 MHz
I
F
= 1.6 mA
V
F
V
BR
I
R
C
I
ΔV
F
/ΔT
A
5.0
0.5
125
- 1.7
10
1.6
1.9
V
V
µA
pF
mV/°C
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Output voltage, output low
Output current, output high
COUPLER
Capacitance (input to output)
Current transfer ratio
Note
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Document Number: 83909
Rev. 1.6, 07-May-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
161
6N1135/6N1136
Vishay Semiconductors
High Speed Optocoupler, 1 MBd,
Photodiode with Transistor Output, 110 °C
Rated
PART
6N1135
6N1136
6N1135
6N1136
SYMBOL
t
PHL
t
PHL
t
PLH
t
PLH
MIN.
TYP.
0.3
0.2
0.3
0.2
MAX.
1.5
0.8
1.5
0.8
UNIT
µs
µs
µs
µs
SWITCHING CHARACTERISTICS
PARAMETER
High to low
Low to high
TEST CONDITION
I
F
= 16 mA, V
CC
= 5.0 V, R
L
= 4.1 kΩ
I
F
= 16 mA, V
CC
= 5.0 V, R
L
= 1.9 kΩ
I
F
= 16 mA, V
CC
= 5.0 V, R
L
= 4.1 kΩ
I
F
= 16 mA, V
CC
= 5.0 V, R
L
= 1.9 kΩ
Pulse generator
Z
O
= 50
Ω
t
r
,t
f
= 5 ns
duty cycle 10
%
t
≤
100
µs
I
F
t
1
I
F
2
I
F
Monitor
8
7
6
5
R
L
5
V
V
O
5
V
1.5
V
t
3
ı
100
Ω
V
O
C
L
15 pF
V
OL
t
PHL
4
t
PLH
i6n135_01
Fig. 1 - Switching Times
COMMON MODE TRANSIENT IMMUNITY
PARAMETER
High
Low
TEST CONDITION
I
F
= 0 mA, V
CM
= 10 V
P-P
, V
CC
= 5.0 V, R
L
= 4.1 kΩ
I
F
= 0 mA, V
CM
= 10 V
P-P
, V
CC
= 5.0 V, R
L
= 1.9 kΩ
I
F
= 16 mA, V
CM
= 10 V
P-P
, V
CC
= 5.0 V, R
L
= 4.1 kΩ
I
F
= 16 mA, V
CM
= 10 V
P-P
, V
CC
= 5.0 V, R
L
= 1.9 kΩ
PART
6N135
6N136
6N135
6N136
SYMBOL
|CM
H
|
|CM
H
|
|CM
L
|
|CM
L
|
MIN.
TYP.
1000
1000
1000
1000
MAX.
UNIT
V/µs
V/µs
V/µs
V/µs
V
CM
10
V
I
F
1
2
3
4
8
7
6
5
R
L
V
O
V
O
5
V
A: I
F
= 0 mA
+V
CM
5
V
10
%
0
V
tr
tf
A
B
V
FF
90
%
t
90
%
10
%
Pulse generator
Z
O
= 50
Ω
t
r,t f
=
8
ns
V
O
t
V
OL
B: I
F
= 16 mA
t
i6n135_02
Fig. 2 - Common-Mode Interference Immunity
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162
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83909
Rev. 1.6, 07-May-08
6N1135/6N1136
High Speed Optocoupler, 1 MBd,
Vishay Semiconductors
Photodiode with Transistor Output, 110 °C
Rated
SAFETY AND INSULATION RATINGS
PARAMETER
Climatic classification
(according to IEC 68 part 1)
Pollution degree (DIN VDE 0109)
Comparative tracking index per
DIN IEC112/VDE 0303 part 1,
group IIIa per DIN VDE 6110
V
IOTM
V
IORM
Isolation resistance
P
SI
I
SI
T
SI
Creepage distance
Clearance distance
Insulation thickness
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
CTI
V
IOTM
V
IORM
R
IO
R
IO
P
SI
I
SI
T
SI
7.0
7.0
0.2
175
8000
630
10
12
10
11
500
300
175
TEST CONDITION
SYMBOL
MIN.
TYP.
55/110/21
2.0
399
V
V
Ω
Ω
mA
mW
°C
mm
mm
mm
MAX.
UNIT
Note
As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the
safety ratings shall be ensured by means of protective circuits.
TYPICAL CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
2.3
2.1
- 55 °C
I
C
- Collector Current (mA )
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.01
110 °C
25 °C
50 °C
0.10
1.00
10.00
100.00
17586
12
11
10
9
8
7
6
5
4
3
2
1
0
I
F
= 25 mA
20 mA
15 mA
10 mA
V
F
- Forward
Voltage
(V)
5 mA
T
amb
= 25 C,
V
CC
= 5
V,
non-saturated
0 1 2 3 4 5 6 7
8
9 10 11 12 13 14 15
V
CE
- Collector Emitter
Voltage
(V)
17585
I
F
- Forward Current (mA )
Fig. 3 - Forward Voltage vs. Forward Current
Fig. 4 - Collector Current vs. Collector Emitter Voltage
Document Number: 83909
Rev. 1.6, 07-May-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
163
6N1135/6N1136
Vishay Semiconductors
High Speed Optocoupler, 1 MBd,
Photodiode with Transistor Output, 110 °C
Rated
8
2.50
CTR
Norm
-
Normalized
CTR
T
amb
= 25 C,
V
CC
= 5
V,
saturated
I
F
= 25 mA
20 mA
15 mA
10 mA
7
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
I
F
= 1 mA
5 mA
10 mA
I
C
- Collector Current (mA)
6
5
4
3
2
1
0
0.0
16 mA
Normalized
to I
F
= 16 mA,
T
amb
= 25 C,
V
CC
= 5
V
V
O
= 0.4
V,
saturated
5 mA
1 mA
0.1
0.2
0.3
0.4
0.5
17629
V
CE
- Collector Emitter
Voltage
(V)
0.00
- 55 - 35 - 15 5 25 45 65
85
105 125
T
amb
- Ambient Temperature (°C)
17631
Fig. 5 - Collector Current vs. Collector Emitter Voltage
Fig. 8 - Normalized Current Transfer Ratio vs.
Ambient Temperature
I
CE0
- Collector Emitter Leakage Current (nA)
1000
100
V
CC
=
V
CE
= 15
V
10
1
0.1
V
CC
=
V
CE
= 5
V
I
C
- Collector Current (mA)
7
I
F
= 20 mA
6
5
4
3
2
1
1 mA
0
- 55 - 35 - 15 5 25 45 65
85
105 125
T
amb
- Ambient Temperature (°C)
V
CC
= 5
V,
V
O
= 0.4
V,
saturated
2 mA
16 mA
10 mA
0.01
- 55 - 35 - 15 5
25 45 65
85
105 125
17587
17590
T
amb
- Ambient Temperature (°C)
Fig. 6 - Collector Emitter Dark Current vs. Ambient Temperature
Fig. 9 - Output Current vs. Temperature
2.0
1.8
CTR
Norm
-
Normalized
CTR
2.0
1.8
CTR
Norm
-
Normalized
CTR
I
F
= 1 mA
5 mA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Normalized
to I
F
= 10 mA,
T
amb
= 25 C,
V
CC
= 5
V
V
O
= 0.4
V,
saturated
I
F
= 1 mA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
5 mA
10 mA
10 mA
Normalized
to I
F
= 10 mA,
T
amb
= 25 C,
V
CC
= 5
V
V
O
= 5
V,
non–saturated
17630
0.0
- 55 - 35 - 15 5 25 45 65
85
105 125
T
amb
- Ambient Temperature (°C)
17632
0.0
- 55 - 35 - 15 5 25 45 65
85
105 125
T
amb
- Ambient Temperature (°C)
Fig. 7 - Normalized Current Transfer Ratio vs.
Ambient Temperature
Fig. 10 - Normalized Current Transfer Ratio vs.
Ambient Temperature
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For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83909
Rev. 1.6, 07-May-08
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