UNISONIC TECHNOLOGIES CO., LTD
6N65-C
Preliminary
Power MOSFET
6A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
6N65-C
is a high voltage power MOSFET designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used in high speed
switching applications of switching power supplies and adaptors.
FEATURES
* R
DS(ON)
< 1.7Ω @ V
GS
=10V, I
D
=3A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Pin Assignment
1
2
3
G
D
S
Packing
Tube
Ordering Number
Package
Lead Free
Halogen Free
6N65L-TF3-T
6N65G-TF3-T
TO-220F
Note: Pin Assignment: G: Gate D: Drain S: Source
MARKING
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QW-R502-A51.b
6N65-C
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
6
A
Continuous Drain Current
I
D
6
A
Pulsed Drain Current (Note 2)
I
DM
24
A
Avalanche Energy
Single Pulsed (Note 3)
E
AS
360
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
3
ns
Power Dissipation
P
D
40
W
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
3. L = 20mH, I
AS
= 6A, V
DD
= 90V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤
6A, di/dt
≤200A/μs,
V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL RESISTANCES CHARACTERISTICS
SYMBOL
θ
JA
θ
JC
RATING
62.5
3.2
UNIT
°C/W
°C/W
PARAMETER
Junction to Ambient
Junction to Case
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6N65-C
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
TEST CONDITIONS
MIN TYP MAX UNIT
V
GS
=0V, I
D
=250μA
650
V
V
DS
=650V, V
GS
=0V
10
μA
Drain-Source Leakage Current
I
DSS
V
DS
=520V, V
GS
=0V, T
J
=125°C
100
μA
Forward
V
GS
=30V, V
DS
=0V
100 nA
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
=-30V, V
DS
=0V
-100 nA
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
=250μA, Referenced to 25°C
0.53
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=3A
1.7
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
350
pF
V
DS
=25V, V
GS
=0V, f=1.0 MHz
Output Capacitance
C
OSS
85
pF
7
pF
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Total Gate Charge
Q
G
100
nC
V
DS
=50V, I
D
=1.3A, V
GS
=10V,
Gate-Source Charge
Q
GS
7
nC
I
G
=100μA (Note 1, 2)
7
nC
Gate-Drain Charge
Q
GD
Turn-On Delay Time
t
D(ON)
55
ns
V
DD
=30V, I
D
=0.5A, R
G
=25Ω
Turn-On Rise Time
t
R
40
ns
(Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
215
ns
Turn-Off Fall Time
t
F
45
ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 6 A
1.4
V
Maximum Continuous Drain-Source Diode
I
S
6
A
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
24
A
Forward Current
Reverse Recovery Time
t
RR
V
GS
= 0 V, I
S
= 6 A,
340
ns
dI
F
/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
Q
RR
3.5
μC
Notes: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
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6N65-C
D.U.T.
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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6N65-C
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Unclamped Inductive Switching Test Circuit
Time
Unclamped Inductive Switching Waveforms
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