7MBR100UB120
IGBT MODULE (U series)
1200V / 100A / PIM
IGBT Modules
Features
· Low V
CE
(sat)
· Compact Package
· P.C. Board Mount Module
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motoe Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
I
CP
-I
C
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Brake
Symbol
V
CES
V
GES
I
C
Condition
Rating
1200
±20
Continuous
1ms
Inverter
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
100
75
200
150
100
200
390
1200
±20
Unit
V
V
A
-I
C
pulse
P
C
V
CES
V
GES
I
C
I
CP
1ms
1 device
W
V
V
A
Continuous
1ms
1 device
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
50
35
100
70
205
1200
1600
100
520
1352
+150
-40 to +125
AC 2500
AC 2500
3.5 *
1
Collector power disspation
Repetitive peak reverse voltage
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I
2
t
(Non-Repetitive)
P
C
V
RRM
V
RRM
I
O
I
FSM
I
2
t
T
j
T
stg
V
iso
Converter
W
V
V
A
A
A
2
s
°C
°C
V
V
N·m
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
Operating junction temperature
Storage temperature
Isolation between terminal and copper base *2
voltage between thermistor and others *3
Mounting screw torque
AC : 1 minute
*1 Recommendable value : 2.5 to 3.5 N·m (M5)
*2 All terminals should be connected together when isolation test will be done.
*3 Two thermistor terminals should be connected together, each other terminals should be
connected together and shorted to base plate when isolation test will be done.
IGBT Module
Electrical characteristics (Tj=25°C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
(terminal)
V
CE(sat)
(chip)
C
ies
t
on
t
r
t
r(i)
t
off
t
f
V
F
(terminal)
V
F
(chip)
t
rr
I
CES
I
GES
V
CE(sat)
(terminal)
V
CE(sat)
(chip)
t
on
t
r
t
off
t
f
I
RRM
V
FM
I
RRM
R
B
Symbol
Condition
V
CE
=1200V, V
GE
=0V
V
CE
=0V, V
GE
=±20V
V
CE
=20V, I
C
=100mA
Tj=25°C
V
GE
=15V
Tj=125°C
Ic=100A
Tj=25°C
Tj=125°C
V
GE
=0V, V
CE
=10V, f=1MHz
V
CC
=600V
I
C
=100A
V
GE
=±15V
R
G
= 9.1
Ω
V
GE
= 0 V
I
F
=100A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Min.
-
-
4.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
465
3305
7MBR100UB120
Characteristics
Typ.
Max.
-
1.0
-
200
6.5
2.40
2.75
1.90
2.25
8
0.53
0.43
0.03
0.37
0.07
2.50
2.75
2.00
2.25
-
-
-
2.25
2.60
2.00
2.35
0.53
0.43
0.37
0.07
-
1.55
1.40
-
5000
495
3375
8.5
2.85
-
2.35
-
-
1.20
0.60
-
1.00
0.30
2.90
-
2.40
-
0.35
1.0
200
2.65
-
2.40
-
1.20
0.60
1.00
0.30
1.0
1.90
-
1.0
-
520
3450
Unit
mA
nA
V
V
Inverter
Input capacitance
Turn-on time
nF
µs
Turn-off time
Forward on voltage
V
Reverse recovery time
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Brake
I
F
=100A
V
CE
=1200V, V
GE
=0V
V
CE
=0V, V
GE
=±20V
Tj=25°C
I
C
=50A
Tj=125°C
V
GE
=15V
Tj=25°C
Tj=125°C
V
CC
=600V
I
C
=50A
V
GE
=±15V
R
G
= 33
Ω
V
R
=1200V
I
F
=100A
V
GE
=0V
V
R
=1600V
T=25°C
T=100°C
T=25/50°C
Condition
µs
mA
nA
V
Turn-on time
Turn-off time
Reverse current
Forward on voltage
Reverse current
Resistance
B value
µs
Converter
terminal
chip
mA
V
mA
Ω
K
Unit
Item
Thermistor
Thermal resistance Characteristics
Min.
Inverter IGBT
Inverter FWD
Brake IGBT
Converter Diode
With thermal compound
-
-
-
-
-
Characteristics
Typ.
Max.
-
-
-
-
0.05
0.32
0.58
0.60
0.50
-
°C/W
Thermal resistance ( 1 device )
Rth(j-c)
Contact thermal resistance
*
Rth(c-f)
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
[Converter]
21(P)
[Brake]
22(P1)
[Inverter]
[Thermistor]
8
20(Gu)
18(Gv)
16(Gw)
9
1(R)
2(S)
3(T)
7(B)
19(Eu)
4(U)
17(Ev)
5(V)
15(Ew)
6(W)
14(Gb)
13(Gx)
12(Gy)
11(Gz)
10(En)
23(N)
24(N1)
IGBT Module
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
200
7MBR100UB120
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
200
VGE=20V 15V
Collector current : Ic [A]
150
12V
Collector current : Ic [A]
150
VGE=20V 15V
12V
100
10V
100
10V
50
8V
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
50
8V
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
200
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C / chip
10
Tj=25°C
Collector current : Ic [A]
150
Tj=125°C
8
6
100
4
Ic=150A
Ic=75A
Ic=37.5A
50
2
0
0
1
2
3
4
5
0
5
10
15
20
25
Collector-Emitter voltage : VCE [V]
Gate - Emitter voltage : VGE [ V ]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
Collector-Emitter voltage : VCE [ 200V/div ]
Gate - Emitter voltage : VGE
[ 5V/div ]
100.0
Capacitance : Cies, Coes, Cres [ nF ]
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=100A, Tj= 25°C
VGE
10.0
Cies
1.0
Cres
Coes
0.1
0
10
20
30
0
0
100
200
VCE
300
400
Collector-Emitter voltage : VCE [V]
Gate charge : Qg [ nC ]
IGBT Module
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=9.1Ω, Tj= 25°C
10000
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
10000
7MBR100UB120
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=9.1Ω, Tj=125°C
1000
ton
tr
toff
100
tf
1000
toff
ton
tr
100
tf
10
0
50
100
150
Collector current : Ic [ A ]
10
0
50
100
150
Collector current : Ic [ A ]
[ Inverter ]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=100A, VGE=±15V, Tj= 25°C
10000
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]
tr
ton
toff
1000
40
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=9.1Ω
Eon(125°C)
30
Eon(25°C)
20
Eoff(125°C)
10
Eoff(25°C)
Err(125°C)
Err(25°C)
100
tf
10
1.0
10.0
100.0
1000.0
0
0
50
100
150
200
Gate resistance : Rg [
Ω
]
Collector current : Ic [ A ]
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=100A, VGE=±15V, Tj= 125°C
50
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Eon
200
Collector current : Ic [ A ]
250
[ Inverter ]
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 9.1Ω ,Tj <= 125°C
40
30
150
20
Eoff
10
Err
0
1.0
10.0
100.0
1000.0
100
50
0
0
400
800
1200
Gate resistance : Rg [
Ω
]
Collector - Emitter voltage : VCE [ V ]
IGBT Module
[ Inverter ]
Forward current vs. Forward on voltage (typ.)
chip
125
T j=25°C
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
100
Forward current : IF [ A ]
T j=125°C
75
1000
7MBR100UB120
[ Inverter ]
Reverse recovery characteristics (ty p.)
Vcc=600V, VGE=±15V, Rg=9.1
Ω
trr (125°C)
trr (25°C)
100
Irr (125°C)
Irr (25°C)
50
25
0
0
1
2
3
4
Forward on voltage : VF [ V ]
10
0
50
100
150
Forward current : IF [ A ]
[ Converter ]
Forward current vs. Forward on voltage (typ.)
chip
125
T j=25°C
100
Forward current : IF [ A ]
T j=125°C
75
50
25
0
0.0
0.5
1.0
1.5
2.0
2.5
Forward on voltage : VFM [ V ]
Transient thermal resistance (max.)
1.000
IGBT[Brake]
FWD[Inverter]
Conv.Diode
[ Thermistor ]
Temperature characteristic (typ .)
100
Thermal resistanse : Rth(j-c) [ °C/W ]
IGBT[Inverter]
Resistance : R [ kΩ ]
10
0.100
1
0.010
0.001
0.010
0.100
1.000
0.1
-60
-40
-20
0
20
40
60
80
100
120
140
160
180
Pulse width : Pw [ sec ]
T emperature [°C ]
