http://www.fujielectric.com/products/semiconductor/
7MBR100VR060-50
IGBT MODULE (V series)
600V / 100A / PIM
Features
Low V
CE
(sat)
Compact Package
P.C.Board Mount Module
Converter Diode Bridge Dynamic Brake Circuit
RoHS compliant product
IGBT Modules
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Inverter
Collector current
Collector power dissipation
Collector-Emitter voltage
Gate-Emitter voltage
Brake
Collector current
Collector power dissipation
Repetitive peak reverse voltage (Diode)
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I
2
t (Non-Repetitive)
Symbols
V
CES
V
GES
Ic
Icp
-Ic
-Ic pulse
Pc
V
CES
V
GES
I
C
I
CP
P
C
V
RRM
V
RRM
I
O
I
FSM
I
2
t
Tj
Tjop
Tc
Tstg
AC : 1min.
M5
Conditions
Maximum
ratings
600
±20
100
200
100
200
335
600
±20
50
100
215
600
800
100
700
2450
175
150
150
150
125
-40~+125
2500
3.5
Units
V
V
A
W
V
V
A
W
V
V
A
A
A
2
s
Continuous
1ms
1ms
1 device
Tc=80°C
Tc=80°C
Continuous
1ms
1 device
Tc=80°C
Tc=80°C
Converter
50Hz/60Hz, sine wave
10ms, Tj=150°C
half sine wave
Inverter, Brake
Converter
Inverter, Brake
Converter
Junction temperature
Operating junciton temperature
(under switching conditions)
Case temperature
Storage temperature
Isolation voltage
Screw torque
°C
between terminal and copper base (*1)
V
iso
between thermistor and others (*2)
Mounting (*3)
-
VAC
Nm
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5)
1
7MBR100VR060-50
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Symbols
I
CES
I
GES
V
GE (th)
V
CE (sat)
(terminal)
Collector-Emitter saturation voltage
V
CE (sat)
(chip)
Inverter
Input capacitance
Turn-on time
Turn-off time
Cies
ton
tr
tr (i)
toff
tf
V
F
(terminal)
Forward on voltage
V
F
(chip)
Reverse recovery time
Zero gate voltage collector current
Gate-Emitter leakage current
trr
I
CES
I
GES
V
CE (sat)
(terminal)
Brake
Collector-Emitter saturation voltage
V
CE (sat)
(chip)
Turn-on time
Turn-off time
Reverse current
Thermistor Converter
Forward on voltage
Reverse current
Resistance
B value
ton
tr
toff
tf
I
RRM
V
FM
(chip)
I
RRM
R
B
V
GE
= 15V
I
C
= 50A
V
CE
= 300V
I
C
= 50A
V
GE
= +15 / -15V
R
G
= 43Ω
V
R
= 600V
I
F
= 100A
V
R
= 800V
T = 25°C
T = 100°C
T = 25 / 50°C
I
F
= 100A
I
F
= 100A
V
GE
= 0V
V
CE
= 600V
V
CE
= 0V
V
GE
= +20 / -20V
V
GE
= 15V
I
C
= 50A
Conditions
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
GE
= ±20V
V
CE
= 20V, I
C
= 100mA
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
V
GE
= 15V
Tj=125°C
I
C
= 100A
Tj=150°C
V
CE
= 10V, V
GE
= 0V, f = 1MHz
V
GE
= 15V
I
C
= 100A
V
CC
= 300V
I
C
= 100A
V
GE
= +15 / -15V
R
G
= 13Ω
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
I
F
= 100A
Characteristics
min.
typ.
max.
-
-
1.0
-
-
200
6.2
6.7
7.2
-
2.10
2.55
-
2.40
-
-
2.50
-
-
1.60
2.05
-
1.90
-
-
2.00
-
-
6.4
-
-
0.36
1.20
-
0.25
0.60
-
0.07
-
-
0.52
1.20
-
0.03
0.45
-
2.10
2.55
-
2.00
-
-
2.00
-
-
1.60
2.05
-
1.50
-
-
1.47
-
-
-
0.35
-
-
-
-
1.85
2.15
2.25
1.60
1.90
2.00
0.36
0.25
0.52
0.03
-
1.75
1.25
-
5000
495
3375
1.0
200
2.30
-
-
2.05
-
-
1.20
0.60
1.20
0.45
1.00
2.20
-
1.0
-
520
3450
Units
mA
nA
V
V
nF
µs
V
µs
mA
nA
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
terminal
chip
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
465
3305
V
µs
mA
V
mA
Ω
K
Thermal resistance characteristics
Items
Symbols
Conditions
Inverter IGBT
Inverter FWD
Brake IGBT
Converter Diode
with Thermal Compound
Characteristics
min.
typ.
max.
-
-
0.45
-
-
0.80
-
-
0.71
-
-
0.66
-
0.05
-
Units
Thermal resistance (1device)
Contact thermal resistance (1device) (*4)
Rth(j-c)
Rth(c-f)
°C/W
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
2
7MBR100VR060-50
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25
o
C / chip
200
V
GE
=20V
15V
200
12V
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150
o
C / chip
V
GE
=20V
15V
12V
150
Collector current: I
C
[A]
150
Collector current: I
C
[A]
100
10V
100
10V
50
8V
0
0
1
2
3
4
5
50
8V
0
0
1
2
3
4
5
Collector-Emitter voltage: V
CE
[V]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
V
GE
=15V / chip
200
Tj=25°C
Collector-Emitter voltage: V
CE
[V]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25
o
C / chip
8
150
Collector - Emitter voltage: V
CE
[V]
Tj=150°C
Collector current: I
C
[A]
Tj=125°C
6
100
4
50
2
Ic=200A
Ic=100A
Ic=50A
0
0
1
2
3
4
5
0
5
10
15
20
25
Collector-Emitter voltage: V
CE
[V]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
V
GE
=0V, f= 1MHz, Tj= 25
o
C
Collector - Emitter voltage: V
CE
[200V/div]
Gate - Emitter voltage: V
GE
[5V/div]
100.0
Gate - Emitter voltage: V
GE
[V]
[ Inverter ]
Dynamic gate charge (typ.)
Vcc=300V， Ic=100A，Tj= 25°C
Capacitance: Cies, Coes, Cres [nF]
Cies
10.0
V
GE
1.0
Cres
Coes
0.1
V
CE
0.0
0
10
20
30
0
200
400
600
800
Collector - Emitter voltage: V
CE
[V]
Gate charge: Qg [nC]
3
7MBR100VR060-50
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V, V
GE
=±15V, R
G
=13Ω, Tj= 125°C
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
10000
10000
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V, V
GE
=±15V, R
G
=13Ω, Tj= 150°C
1000
1000
toff
tr
ton
toff
tr
ton
100
tf
100
tf
10
10
0
Collector current: I
C
[A]
100
200
300
0
Collector current: I
C
[A]
100
200
300
[ Inverter ]
Switching time vs. gate resistance (typ.)
Vcc=300V, Ic=100A, V
GE
=±15V, Tj= 125°C
Switching time : ton, tr, toff, tf [ nsec ]
10000
toff
ton
tr
1000
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=300V, V
GE
=±15V, R
G
=13Ω
Switching loss : Eon, Eoff, Err [mJ/pulse ]
15
Eon(150°C)
Eon(125°C)
10
Eoff(150°C)
Eoff(125°C)
100
tf
5
Err(150°C)
Err(125°C)
0
0
100
200
300
10
1
10
100
1000
Gate resistance : R
G
[Ω]
[ Inverter ]
Switching loss vs. gate resistance (typ.)
Vcc=300V, Ic=100A, V
GE
=±15V
Switching loss : Eon, Eoff, Err [mJ/pulse ]
30
Eon(150°C)
Eon(125°C)
20
Collector current: I
C
[A]
[ Inverter ]
Reverse bias safe operating area (max.)
+V
GE
=15V, -V
GE
<= 15V, R
G
>= 13Ω ,Tj =150°C
300
Collector current: I
C
[A]
200
10
Eoff(150°C)
Eoff(125°C)
100
RBSOA
(Repetitive pulse)
0
1
10
100
Err(150°C)
Err(125°C)
1000
0
0
200
400
600
800
Gate resistance : R
G
[Ω]
Collector-Emitter voltage : V
CE
[V]
4
7MBR100VR060-50
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
[ Inverter ]
Forward current vs. forward on voltage (typ.)
chip
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
200
[ Inverter ]
Reverse recovery characteristics (typ.)
Vcc=300V, V
GE
=±15V, R
G
=13Ω
1000
Forward current : I
F
[A]
150
trr(150°C)
trr(125°C)
100
100
Tj=150°C
50
Tj=125°C
Tj=25°C
Irr(150°C)
Irr(125°C)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
10
0
100
200
300
Forward on voltage : V
F
[V]
[ Converter ]
Forward current vs. forward on voltage (typ.)
chip
200
Forward current : I
F
[A]
Forward current : I
F
[A]
150
100
Tj=125°C
50
Tj=25°C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Forward on voltage : V
FM
[V]
[ Thermistor ]
Temperature characteristic (typ.)
100
Transient thermal resistance (max.)
1.00
Thermal resistanse : Rth(j-c) [ °C/W ]
FWD[Inverter]
Conv. Diode
IGBT[Inverter]
Resistance : R [kΩ]
1.000
10
0.10
IGBT[Brake]
1
0.01
0.001
0.010
0.100
0.1
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
Pulse width : Pw [sec]
Temperature [°C ]
5
