http://www.fujielectric.com/products/semiconductor/
7MBR25VA120-50
IGBT MODULE (V series)
1200V / 25A / PIM
Features
Low V
CE
(sat)
Compact Package
P.C.Board Mount Module
Converter Diode Bridge Dynamic Brake Circuit
RoHS compliant product
IGBT Modules
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at T
C
=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Inverter
Collector current
Collector power dissipation
Collector-Emitter voltage
Gate-Emitter voltage
Brake
Collector current
Collector power dissipation
Repetitive peak reverse voltage (Diode)
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I
2
t (Non-Repetitive)
Symbols
V
CES
V
GES
I
C
I
cp
-I
C
-I
c pulse
P
C
V
CES
V
GES
I
C
I
CP
P
C
V
RRM
V
RRM
I
O
I
FSM
I
2
t
T
j
T
jop
T
c
T
stg
AC : 1min.
M5
Conditions
Maximum
ratings
1200
±20
25
50
25
50
170
1200
±20
25
50
170
1200
1600
25
155
120
175
150
150
150
125
-40~+125
2500
3.5
Units
V
V
A
W
V
V
A
W
V
V
A
A
A
2
s
Continuous
1ms
1ms
1 device
T
C
=80°C
T
C
=80°C
Continuous
1ms
1 device
T
C
=80°C
T
C
=80°C
Converter
50Hz/60Hz, sine wave
10ms, T
j
=150°C
half sine wave
Inverter, Brake
Converter
Inverter, Brake
Converter
Junction temperature
Operating junciton temperature
(under switching conditions)
Case temperature
Storage temperature
Isolation voltage
Screw torque
°C
between terminal and copper base (*1)
V
iso
between thermistor and others (*2)
Mounting (*3)
-
VAC
Nm
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5)
1
7MBR25VA120-50
Electrical characteristics (at T
j
= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Symbols
I
CES
I
GES
V
GE (th)
V
CE (sat)
(terminal)
Collector-Emitter saturation voltage
V
CE (sat)
(chip)
Inverter
Input capacitance
Turn-on time
Turn-off time
C
ies
t
on
t
r
t
r (i)
t
off
t
f
V
F
(terminal)
Forward on voltage
V
F
(chip)
Reverse recovery time
Zero gate voltage collector current
Gate-Emitter leakage current
t
rr
I
CES
I
GES
V
CE (sat)
(terminal)
Brake
Collector-Emitter saturation voltage
V
CE (sat)
(chip)
Turn-on time
Turn-off time
Reverse current
Thermistor Converter
Forward on voltage
Reverse current
Resistance
B value
t
on
t
r
t
off
t
f
I
RRM
V
FM
(chip)
I
RRM
R
B
V
GE
= 15V
I
C
= 25A
V
CE
= 600V
I
C
= 25A
V
GE
= +15 / -15V
R
G
= 39Ω
V
R
= 1200V
I
F
= 25A
V
R
= 1600V
T = 25°C
T = 100°C
T = 25 / 50°C
I
F
= 25A
I
F
= 25A
V
GE
= 0V
V
CE
= 1200V
V
CE
= 0V
V
GE
= +20 / -20V
V
GE
= 15V
I
C
= 25A
Conditions
V
GE
= 0V, V
CE
= 1200V
V
GE
= 0V, V
GE
= ±20V
V
CE
= 20V, I
C
= 25mA
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
T
j
=25°C
T
j
=125°C
T
j
=150°C
T
j
=25°C
V
GE
= 15V
T
j
=125°C
I
C
= 25A
T
j
=150°C
V
CE
= 10V, V
GE
= 0V, f = 1MHz
V
GE
= 15V
I
C
= 25A
V
CC
= 600V
I
C
= 25A
V
GE
= +15 / -15V
R
G
= 39Ω
T
j
=25°C
T
j
=125°C
T
j
=150°C
T
j
=25°C
T
j
=125°C
T
j
=150°C
I
F
= 25A
Characteristics
min.
typ.
max.
-
-
1.0
-
-
200
6.0
6.5
7.0
-
2.25
2.70
-
2.60
-
-
2.65
-
-
1.85
2.30
-
2.20
-
-
2.25
-
-
2.1
-
-
0.39
1.20
-
0.09
0.60
-
0.03
-
-
0.53
1.00
-
0.06
0.30
-
2.10
2.55
-
2.25
-
-
2.20
-
-
1.70
2.15
-
1.85
-
-
1.80
-
-
-
0.35
-
-
-
-
2.25
2.60
2.65
1.85
2.20
2.25
0.39
0.09
0.53
0.06
-
1.80
1.42
-
5000
495
3375
1.0
200
2.70
-
-
2.30
-
-
1.20
0.60
1.00
0.30
1.00
2.25
-
1.0
-
520
3450
Units
mA
nA
V
V
nF
µs
V
µs
mA
nA
T
j
=25°C
T
j
=125°C
T
j
=150°C
T
j
=25°C
T
j
=125°C
T
j
=150°C
terminal
chip
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
465
3305
V
µs
mA
V
mA
Ω
K
Thermal resistance characteristics
Items
Symbols
Conditions
Inverter IGBT
Inverter FWD
Brake IGBT
Converter Diode
with Thermal Compound
Characteristics
min.
typ.
max.
-
-
0.89
-
-
1.06
-
-
0.89
-
-
0.97
-
0.05
-
Units
Thermal resistance (1device)
Contact thermal resistance (1device) (*4)
R
th(j-c)
R
th(c-f)
°C/W
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
2
7MBR25VA120-50
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
T
j
= 25°C / chip
50
V
GE
=20V
15V
40
30
10V
20
10
0
0
1
2
3
4
5
12V
50
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
T
j
= 150°C / chip
V
GE
=20V
15V
12V
Collector current: I
C
[A]
Collector current: I
C
[A]
40
30
20
10V
8V
10
8V
0
0
1
2
3
4
5
Collector-Emitter voltage: V
CE
[V]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
V
GE
=15V / chip
50
T
j
=150°C
Collector-Emitter voltage: V
CE
[V]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
T
j
= 25°C / chip
8
Collector current: I
C
[A]
40
T
j
=125°C
Collector - Emitter voltage: V
CE
[V]
T
j
=25°C
6
30
20
4
10
2
I
C
=50A
I
C
=25A
I
C
=13A
0
0
1
2
3
4
5
0
5
10
15
20
25
Collector-Emitter voltage: V
CE
[V]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
V
GE
=0V, f= 1MHz, T
j
= 25°C
C
ies
Gate - Emitter voltage: V
GE
[V]
[ Inverter ]
Dynamic gate charge (typ.)
V
CC
=600V， I
C
=25A，T
j
= 25°C
Collector - Emitter voltage: V
CE
[200V/div]
Gate - Emitter voltage:
V
GE
[5V/div]
10.0
Capacitance: C
ies
, C
oes
, C
res
[nF]
V
GE
1.0
C
res
0.1
C
oes
V
CE
0
100
200
300
0.0
0
10
20
30
Collector - Emitter voltage: V
CE
[V]
Gate charge: Q
g
[nC]
3
7MBR25VA120-50
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
[ Inverter ]
Switching time vs. Collector current (typ.)
V
CC
=600V, V
GE
=±15V, R
G
=39Ω, T
j
= 125°C
10000
[ Inverter ]
Switching time vs. Collector current (typ.)
V
CC
=600V, V
GE
=±15V, R
G
=39Ω, T
j
= 150°C
10000
1000
Switching time : t
on
, t
r
, t
off
, t
f
[ nsec ]
Switching time : t
on
, t
r
, t
off
, t
f
[ nsec ]
t
off
t
on
1000
t
off
t
on
100
t
r
t
f
100
t
r
t
f
10
0
20
40
60
10
0
Collector current: I
C
[A]
[ Inverter ]
Switching time vs. gate resistance (typ.)
V
CC
=600V, I
C
=25A, V
GE
=±15V, T
j
= 125°C
Switching loss : E
on
, E
off
, E
rr
[mJ/pulse ]
10000
7
6
5
4
3
2
1
0
0
Collector current: I
C
[A]
20
40
60
[ Inverter ]
Switching loss vs. Collector current (typ.)
V
CC
=600V, V
GE
=±15V, R
G
=39Ω
Switching time : t
on
, t
r
, t
off
, t
f
[ nsec ]
1000
t
off
t
on
100
t
r
t
f
E
on
(150°C)
E
on
(125°C)
E
off
(150°C)
E
off
(125°C)
E
rr
(150°C)
E
rr
(125°C)
10
10
100
25
50
75
Gate resistance : R
G
[Ω]
[ Inverter ]
Switching loss vs. gate resistance (typ.)
V
CC
=600V, I
C
=25A, V
GE
=±15V
Switching loss : E
on
, E
off
, E
rr
[mJ/pulse ]
5
E
on
(150°C)
E
on
(125°C)
E
off
(150°C)
E
off
(125°C)
E
rr
(150°C)
E
rr
(125°C)
Collector current: I
C
[A]
[ Inverter ]
Reverse bias safe operating area (max.)
+V
GE
=15V, -V
GE
<= 15V, R
G
>= 39Ω ,T
j
=150°C
75
Collector current: I
C
[A]
4
3
2
50
RBSOA
(Repetitive pulse)
25
1
0
10
100
1000
0
0
400
800
1200
Gate resistance : R
G
[Ω]
Collector-Emitter voltage : V
CE
[V]
4
7MBR25VA120-50
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
[ Inverter ]
Forward current vs. forward on voltage (typ.)
chip
Reverse recovery current : I
rr
[ A ]
Reverse recovery time : t
rr
[ nsec ]
50
40
30
T
j
=150°C
20
T
j
=125°C
10
0
0
1
2
3
4
5
T
j
=25°C
[ Inverter ]
Reverse recovery characteristics (typ.)
V
CC
=600V, V
GE
=±15V, R
G
=39Ω
1000
Forward current : I
F
[A]
100
t
rr
(150°C)
t
rr
(125°C)
I
rr
(150°C)
I
rr
(125°C)
10
1
0
25
50
75
Forward on voltage : V
F
[V]
[ Converter ]
Forward current vs. forward on voltage (typ.)
chip
50
T
j
=25°C
T
j
=125°
Forward current : I
F
[A]
Forward current : I
F
[A]
40
30
20
10
0
0
1
2
3
4
Forward on voltage : V
FM
[V]
[ Thermistor ]
Temperature characteristic (typ.)
100
Transient thermal resistance (max.)
10.00
Thermal resistanse : R
th(j-c)
[ °C/W ]
1.00
FWD[Inverter]
IGBT[Inverter]
IGBT[Brake]
Conv. Diode
Resistance : R [kΩ]
10
0.10
1
0.01
0.001
0.010
0.100
1.000
0.1
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
Pulse width : P
W
[sec]
Temperature [°C ]
5
