7MBR50SD120
PIM/Built-in converter with thyristor
and brake (S series)
1200V / 50A / PIM
Features
· Low V
CE
(sat)
· Compact Package
· P.C. Board Mount Module
· Converter Diode Bridge Dynamic Brake Circuit
IGBT Modules
Applications
· Inverter for Motor Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Inverter
Symbol
V
CES
V
GES
I
C
I
CP
-I
C
P
C
V
CES
V
GES
I
C
I
CP
Collector power disspation
Repetitive peak reverse voltage(Diode)
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Average on-state current
Surge 0n-state current (Non-Repetitive)
Junction temperature
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
It
2
Condition
Rating
1200
±20
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
75
50
150
100
50
360
1200
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
±20
35
25
70
50
180
1200
1600
1600
Unit
V
V
A
A
A
W
V
V
A
A
W
V
V
V
A
A
°C
V
A
A
A
2
s
°C
°C
V
V
N·m
Continuous
1ms
Collector current
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Brake
1 device
Continuous
1ms
1 device
P
C
V
RRM
V
DRM
V
RRM
I
T(AV)
I
TSM
T
jw
V
RRM
I
O
I
FSM
I
2
t
T
j
Thyristor
50Hz/60Hz sine wave
Tj=125°C, 10ms half sine wave
50
530
125
1600
50
520
1352
+150
-40 to +125
AC 2500
AC 2500
1.7 *
1
Converter
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
(Non-Repetitive)
Junction temperature (except Thyristor)
Storage temperature
T
stg
Isolation between terminal and copper base *2 V
iso
voltage between thermistor and others *3
Mounting screw torque
AC : 1 minute
*1 Recommendable value : 1.3 to 1.7 N·m (M4)
*2 All terminals should be connected together when isolation test will be done.
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26
should be connected together and shorted to copper base.
IGBT Module
Electrical characteristics (Tj=25°C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Inverter
7MBR50SD120
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
t
on
t
r
t
off
t
f
V
F
t
rr
I
CES
I
GES
V
CE(sat)
t
on
t
r
t
off
t
f
I
RRM
I
DM
I
RRM
I
GT
V
GT
V
TM
V
FM
I
RRM
R
B
Condition
Min.
V
CE
=1200V, V
GE
=0V
V
CE
=0V, V
GE
=±20V
V
CE
=20V, I
C
=50mA
V
GE
=15V, Ic=50A chip
terminal
V
GE
=0V, V
CE
=10V, f=1MHz
V
CC
=600V
I
C
=50A
V
GE
=±15V
R
G
=24Ω
I
F
=50A
chip
terminal
I
F
=50A
V
CES
=1200V, V
GE
=0V
V
CE
=0V, V
GE
=±20V
I
C
=25A, V
GE
=15V chip
terminal
V
CC
=600V
I
C
=25A
V
GE
=±15V
R
G
=51Ω
V
R
=1200V
V
DM
=1600V
V
RM
=1600V
V
D
=6V, I
T
=1A
V
D
=6V, I
T
=1A
I
TM
=50A
I
F
=50A
V
R
=1600V
T=25°C
T=100°C
T=25/50°C
465
3305
chip
terminal
chip
terminal
5.5
Characteristics
Typ.
Max.
250
200
8.5
2.7
1.2
0.6
1.0
0.3
3.3
350
250
200
2.7
1.2
0.6
1.0
0.3
250
1.0
1.0
100
2.5
1.15
Unit
µA
nA
V
V
pF
µs
7.2
2.1
2.3
6000
0.35
0.25
0.45
0.08
2.3
2.5
Input capacitance
Turn-on time
Turn-off
Forward on voltage
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
V
ns
µA
nA
V
µs
Brake
Turn-on time
Turn-off time
Reverse current
off-state current
Reverse current
Gate trigger current
Gate trigger voltage
On-state voltage
Forward on voltage
2.1
2.25
0.35
0.25
0.45
0.08
µA
mA
mA
mA
V
V
V
Thyristor
1.0
1.1
1.1
1.2
5000
495
3375
Converter
1.5
250
520
3450
K
µA
Ω
Reverse current
Resistance
Thyristor
B value
Thermal resistance Characteristics
Item
Symbol
Condition
Min.
Inverter IGBT
Inverter FWD
Brake IGBT
Thyristor
Converter Diode
With thermal compound
0.05
Characteristics
Typ.
Max.
0.35
0.75
0.69
0.56
0.50
Unit
Thermal resistance ( 1 device )
Rth(j-c)
°C/W
Contact thermal resistance
*
Rth(c-f)
* This is the value which is defined mounting on the additional cooling fin with thermal compound
IGBT Module
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 25°C (typ.)
120
120
7MBR50SD120
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 125°C (typ.)
VGE= 20V
15V
12V
100
100
VGE= 20V
15V
12V
Collector current : Ic [ A ]
80
Collector current : Ic [ A ]
80
10V
60
60
10V
40
40
20
20
8V
8V
0
0
1
2
3
4
5
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
120
10
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C (typ.)
Tj= 25°C
100
Tj= 125°C
80
Collector - Emitter voltage : VCE [ V ]
8
Collector current : Ic [ A ]
6
60
4
Ic= 100A
2
Ic= 50A
Ic= 25A
40
20
0
0
1
2
3
4
5
0
5
10
15
20
25
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
20000
1000
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=50A, Tj= 25°C
25
10000
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
800
20
Cies
600
15
1000
400
10
Coes
Cres
200
5
100
0
5
10
15
20
25
30
35
0
0
100
200
300
400
0
500
Collector - Emitter voltage : VCE [ V ]
Gate charge : Qg [ nC ]
Gate - Emitter voltage : VGE [ V ]
IGBT Module
7MBR50SD120
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg= 24
Ω
, Tj= 25°C
1000
1000
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg= 24
Ω
, Tj= 125°C
toff
Switching time : ton, tr, toff, tf [ nsec ]
500
Switching time : ton, tr, toff, tf [ nsec ]
toff
500
ton
ton
tr
tr
tf
100
100
tf
50
0
20
40
60
80
50
0
20
40
60
80
Collector current : Ic [ A ]
Collector current : Ic [ A ]
[ Inverter ]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=50A, VGE=±15V, Tj= 25°C
5000
14
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=24
Ω
tr
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
ton
toff
12
Eon(125°C)
Switching time : ton, tr, toff, tf [ nsec ]
10
1000
8
Eon(25°C)
500
6
Eoff(125°C)
4
Eoff(25°C)
Err(125°C)
100
tf
2
Err(25°C)
50
10
50
100
500
0
0
20
40
60
80
100
Gate resistance : Rg [
Ω
]
Collector current : Ic [ A ]
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=50A, VGE=±15V, Tj= 125°C
40
600
[ Inverter ]
Reverse bias safe operating area
+VGE=15V, -VGE<=15V, Rg>=24
Ω
, Tj<=125°C
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Eon
30
500
Collector current : Ic [ A ]
400
20
300
SCSOA
(non-repetitive pulse)
200
10
Eoff
100
RBSOA
(Repetitive pulse)
0
10
50
100
Err
500
0
0
200
400
600
800
1000
1200
1400
Gate resistance : Rg [
Ω
]
Collector - Emitter voltage : VCE [ V ]
IGBT Module
7MBR50SD120
[ Inverter ]
Forward current vs. Forward on voltage (typ.)
120
300
[ Inverter ]
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=24
Ω
Tj=125°C
100
Tj=25°C
trr(125°C)
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
Forward current : IF [ A ]
80
100
trr(25°C)
60
40
Irr(125°C)
Irr(25°C)
20
0
0
1
2
3
4
10
0
20
40
60
80
Forward on voltage : VF [ V ]
Forward current : IF [ A ]
[ Converter ]
Forward current vs. Forward on voltage (typ.)
120
200
[ Thyristor ]
On-state current vs. On-state voltage (typ.)
100
Tj= 25°C
Tj= 125°C
100
Tjw= 125°C
Tjw= 25°C
80
60
Instantaneous on-state current [ A ]
0.4
0.8
1.2
1.6
2.0
Forward current : IF [ A ]
40
10
20
0
0.0
2
0.0
0.4
0.8
1.2
1.6
2.0
Forward on voltage : VFM [ V ]
Instantaneous on-state voltage [ V ]
Transient thermal resistance
5
200
100
[ Thermistor ]
Temperature characteristic (typ.)
Thermal resistanse : Rth(j-c) [ °C/W ]
1
Resistance : R [ k
Ω
]
1
FWD[Inverter]
IGBT[Brake]
Thyristor
Conv. Diode
IGBT[Inverter]
10
0.1
1
0.01
0.001
0.01
0.1
0.1
-60
-40
-20
0
20
40
60
80
100
120
140
160
180
Pulse width : Pw [ sec ]
Temperature [ °C ]
