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8403601ZA

2KX8 STANDARD SRAM, 200ns, CQCC32, CERAMIC, CC-32

器件类别:存储    存储   

厂商名称:Renesas(瑞萨电子)

厂商官网:https://www.renesas.com/

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器件参数
参数名称
属性值
厂商名称
Renesas(瑞萨电子)
零件包装代码
QFN
包装说明
CERAMIC, CC-32
针数
32
Reach Compliance Code
unknown
ECCN代码
3A001.A.2.C
最长访问时间
200 ns
其他特性
TTL COMPATIBLE
JESD-30 代码
R-CQCC-N32
长度
13.97 mm
内存密度
16384 bit
内存集成电路类型
STANDARD SRAM
内存宽度
8
功能数量
1
端子数量
32
字数
2048 words
字数代码
2000
工作模式
ASYNCHRONOUS
最高工作温度
125 °C
最低工作温度
-55 °C
组织
2KX8
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装代码
QCCN
封装形状
RECTANGULAR
封装形式
CHIP CARRIER
并行/串行
PARALLEL
认证状态
Not Qualified
座面最大高度
3.05 mm
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
MILITARY
端子形式
NO LEAD
端子节距
1.27 mm
端子位置
QUAD
宽度
11.43 mm
文档预览
REVISIONS
LTR
E
DESCRIPTION
Change to vendor similar part number for vendor CAGE number
61772 for devices 08KX, 09KX, 10KX, 11KX, 12KX, 13KX, 14KX,
15KX, and 16KX. Remove vendor CAGE number 61772 from devices
08YX, 09YX, 10YX, 11YX, 12YX, 13YX, 15YX, and 16YX. Change to
vendor similar part number for vendor CAGE number 65786 for
devices 09 and 11. Add vendor CAGE number 50088 to the drawing
as a source of supply for devices 04JX and 05JX. Add vendor CAGE
number 65896 to the drawing as a source of supply for devices 15 and
16. Removed 4.3.3 from drawing. Editorial changes throughout.
Added provisions for the addition of QD certified parts to drawing.
Updated boilerplate. Added CAGE OC7V7 as supplier. - ksr
DATE (YR-MO-DA)
92-04-27
APPROVED
M. A. Frye
F
00-09-27
Raymond Monnin
THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN REPLACED
CURRENT CAGE CODE 67268
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
F
15
F
16
F
17
F
18
REV
SHEET
PREPARED BY
James E. Jamison
F
19
F
20
F
21
F
1
F
22
F
2
F
3
F
4
F
5
F
6
F
7
F
8
F
9
F
10
F
11
F
12
F
13
F
14
STANDARD
MICROCIRCUIT
DRAWING
CHECKED BY
Ray Monnin
APPROVED BY
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216
http://www.dscc.dla.mil
THIS DRAWING IS
AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
Don Cool
DRAWING APPROVAL DATE
84 – 08 - 24
MICROCIRCUITS, MEMORY,
DIGITAL, CMOS, 16K
(2048 X 8) BIT STATIC RAM,
MONOLITHIC SILICON
SIZE
A
SHEET
CAGE CODE
AMSC N/A
REVISION LEVEL
F
14933
1 OF
22
84036
DSCC FORM 2233
APR 97
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
5962-E173-00
1. SCOPE
1.1 Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in
accordance with MIL-PRF-38535, appendix A.
1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the following example:
84036
~
~
~
~
01
~
~
~
~
~
~
~
~
Case outline
(see 1.2.2)
J
~
~
~
~
X
Drawing number
Device type
(see 1.2.1)
Lead finish
(see 1.2.3)
1.2.1 Device type(s). The device type(s) identify the circuit function as follows:
Device type
01
02
03
04
05
06
07
08
09
10
11
12
13
14
15
16
Generic number 1/
Supply voltage variation
10%
10%
10%
10%
10%
10%
10%
10%
10%
10%
10%
10%
10%
10%
10%
10%
Address access time
200 ns (synchronous)
90 ns
90 ns
150 ns
200 ns
70 ns
120 ns (synchronous)
45 ns
45 ns
55 ns
55 ns
70 ns
70 ns
35 ns
120 ns
90 ns
1.2.2 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
J
K
L
X
Y
Z
Descriptive designator
CDIP2-T24 or GDIP1-T24
CDFP3-F24 or GDFP2-F24
CDIP4-T24 or GDIP3-T24
CQCC1-N32
See Figure 1
CQCC1-N32
Terminals
24
24
24
32
24
32
Package style
dual-in-line package
flat package
dual-in-line package
rectangular chip carrier package
rectangular chip carrier package
rectangular chip carrier package with
castellated instead of chamfered
corners and extended pad metallization
at terminal number 1.
square chip carrier package
3
CQCC1-N28
28
1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A.
1/ Generic numbers are listed on the standardized military drawing source approval bulletin at the end of this Standard
Microcircuit Drawing and will also be listed in MIL-HDBK-103.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
84036
SHEET
F
2
1.3 Absolute maximum ratings.
Supply voltage range (VCC) ---------------------------------0.3 V dc to +7.0 V dc 2/
Temperature under bias---------------------------------------55°C to +125°C
Storage temperature range-----------------------------------55°C to +150°C
Maximum power dissipation (PD)--------------------------1.0 W
Lead temperature (soldering, 5 seconds) ---------------+275°C
Thermal resistance, junction-to-case (
T
JC): ------------See MIL-STD-1835
Case Y ---------------------------------------------------------- 30°C/W
Junction temperature (TJ) -----------------------------------+150°C 3/
All input or output voltages with respect to ground-----0.3 V dc to VCC +0.3 V dc 4/
1.4 Recommended operating conditions.
Case operating temperature range (TC) ----------------- -55°C to +125°C
Input low voltage (VIL):
Device types 01 through 16 -------------------------------- -0.3 V dc to 0.8 V dc 2/
Input high voltage (VIH):
Device types 01, 07------------------------------------------- 2.4 V dc to VCC +0.3 V dc 2/
Device types 02 through 06, 08 through 16 ----------- 2.2 V dc to VCC +0.3 V dc 2/
Supply voltage range (VCC): -------------------------------- 4.5 V dc to 5.5 V dc 2/
Minimum chip enable low time ---------------------------- 40 ns 5/
Minimum chip enable high time --------------------------- 40 ns 5/
Maximum input rise time ------------------------------------ 40 ns
Maximum input fall time ------------------------------------- 40 ns
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed
in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in
the solicitation.
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
STANDARDS
DEPARTMENT OF DEFENSE
MIL-STD-883 -
MIL-STD-973 -
MIL-STD-1835 -
HANDBOOKS
DEPARTMENT OF DEFENSE
MIL-HDBK-103 -
MIL-HDBK-780 -
List of Standard Microcircuit Drawings (SMD's).
Standard Microcircuit Drawings.
Test Method Standard Microcircuits.
Configuration Management.
Interface Standard For Microcircuit Case Outlines.
(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2/ All voltages referenced to V
SS
.
3/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions
in accordance with method 5004 of MIL-STD-883.
4/ Negative undershoots to a minimum of -3.0 V are allowed with a maximum of 20 ns pulse width.
5/ For device types 02, 03, and 06 only.
SIZE
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
A
REVISION LEVEL
84036
SHEET
F
3
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the tex t
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for non-
JAN class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified Manufacturer
Listing (QML) certified and qualified manufacturer or a manufacturer who has been granted transitional certification to MIL-PRF-
38535 may be processed as QML product in accordance with the manufacturers approved program plan and qualifying activity
approval in accordance with MIL-PRF-38535. This QML flow as documented in the Quality Management (QM) plan may make
modifications to the requirements herein. These modifications shall not affect form, fit, or function of the device. These
modifications shall not affect the PIN as described herein. A "Q" or "QML" certification mark in accordance with MIL-PRF-
38535 is required to identify when the QML flow option is used. This drawing has been modified to allow the manufacturer to
use the alternate die/fabrication requirements of paragraph A.3.2.2 of MIL-PRF-38535 or alternative approved by the Qualifying
Activity.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as
specified in MIL-PRF-38535, appendix A and herein.
3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.2 herein and figure 1.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2.
3.2.3 Truth table(s). The truth table(s) shall be as specified on figure 3.
3.2.4 Logic diagram(s). The logic diagram(s) shall be as specified on figure 4.
3.2.5 Die overcoat. Polyimide and silicone coatings are allowable as an overcoat on the die for alpha particle protection
only. Each coated microcircuit inspection lot (see inspection lot as defined in MIL-PRF-38535) shall be subjected to and pass
the internal moisture content test at 5000 ppm (see method 1018 of MIL-STD-883). The frequency of the internal water vapor
testing shall not be decreased unless approved by the preparing activity for class M. The TRB will ascertain the requirements
as provided by MIL-PRF-38535 for classes Q and V. Samples may be pulled any time after seal.
3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are
as specified in table I and shall apply over the full (case or ambient) operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical
tests for each subgroup are described in table I.
3.5 Marking. Marking shall be in accordance with MIL-PRF-38535, appendix A. The part shall be marked with the PIN
listed in 1.2 herein. In addition, the manufacturer's PIN may also be marked as listed in MIL-HDBK-103 (see 6.6 herein). For
packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the
option of not marking the "5962-" on the device.
3.5.1 Certification/compliance mark. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535,
Appendix A. For Class Q product built in accordance with A.3.2.2 of MIL-PRF-38535 or other alternative approved by the
Qualifying Activity, the "QD" certification mark shall be used in place of the "QML" or "Q" certification mark.
3.6 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to be listed as an
approved source of supply in MIL-HDBK-103 (see 6.6 herein). The certificate of compliance submitted to DSCC-VA prior to
listing as an approved source of supply shall affirm that the manufacturer's product meets the requirements of MIL-PRF-
38535, appendix A and the requirements herein.
3.7 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38535, appendix A shall be provided
with each lot of microcircuits delivered to this drawing.
3.8 Notification of change. Notification of change to DSCC-VA shall be required in accordance with MIL-PRF-38535,
appendix A.
3.9 Verification and review. DSCC, DSCC's agent, and the acquiring activity retain the option to review the manufacturer's
facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the
reviewer.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
84036
SHEET
F
4
TABLE I. Electrical performance characteristics.
Test
Symbol
Test conditions 1/ 2/
VSS = 0 V, 4.5 V
d
V
CC
d
5.5 V
-55
q
C
d
T
C
d
+125
q
C
unless otherwise specified
I
OH
= -1 mA
I
OH
= -4 mA
Group A
Device
subgroups type
Min
1,2,3
1,2,3
01-07,
15,16
08-14
01,07
1,2,3
02,03,
06,15
04,05,
16
08-14
1,2,3
01,02,
06,07
04,05,
09,11,
13,14,
15,16
03,08,
10,12
-1.0
Limits
Unit
Max
V
High-level output voltage
V
OH
2.4
Low-level output voltage
V
OL
I
OL
= +3.2 mA
I
OL
= +4.0 mA
I
OL
= +2.0 mA
I
OL
= +8.0 mA
0.4
V
High impedance output
leakage current
I
IOLZ
I
IOHZ
OE = V
IH
1.0
10.0
P
A
-10.0
-5.0
-1.0
-2.0
5.0
1.0
2.0
Input leakage current
I
IL
I
IH
V
IN
= GND
V
IN
= 5.5 V
1,2,3
01,02,
06,07
04,05,
15
03,08,
10,12,
16
09,11,
13,14
01,07
P
A
-5.0
5.0
-10.0
10.0
10
mA
Operating supply current
I
CC1
V
CC
= 5.5 V, f = fmax 3/
CE = V
IL
, outputs open
All other inputs at V
IL
1,2,3
04,05,
13,15,
16
02,03,
06
08,10,
12
09,11
120
14
150
90
70
85
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
84036
SHEET
F
5
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参数对比
与8403601ZA相近的元器件有:8403607JA、8403607ZA、8403601JA。描述及对比如下:
型号 8403601ZA 8403607JA 8403607ZA 8403601JA
描述 2KX8 STANDARD SRAM, 200ns, CQCC32, CERAMIC, CC-32 2KX8 STANDARD SRAM, 120ns, CDIP24, CERAMIC, DIP-24 2KX8 STANDARD SRAM, 120ns, CQCC32, CERAMIC, CC-32 2KX8 STANDARD SRAM, 200ns, CDIP24, CERAMIC, DIP-24
厂商名称 Renesas(瑞萨电子) Renesas(瑞萨电子) Renesas(瑞萨电子) Renesas(瑞萨电子)
零件包装代码 QFN DIP QFJ DIP
包装说明 CERAMIC, CC-32 CERAMIC, DIP-24 CERAMIC, LCC-32 CERAMIC, DIP-24
针数 32 24 32 24
Reach Compliance Code unknown not_compliant unknown not_compliant
ECCN代码 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C
最长访问时间 200 ns 120 ns 120 ns 200 ns
其他特性 TTL COMPATIBLE TTL COMPATIBLE TTL COMPATIBLE TTL COMPATIBLE
JESD-30 代码 R-CQCC-N32 R-GDIP-T24 R-CQCC-N32 R-GDIP-T24
内存密度 16384 bit 16384 bit 16384 bit 16384 bit
内存集成电路类型 STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
内存宽度 8 8 8 8
功能数量 1 1 1 1
端子数量 32 24 32 24
字数 2048 words 2048 words 2048 words 2048 words
字数代码 2000 2000 2000 2000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 125 °C 125 °C 125 °C 125 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C
组织 2KX8 2KX8 2KX8 2KX8
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, GLASS-SEALED CERAMIC, METAL-SEALED COFIRED CERAMIC, GLASS-SEALED
封装代码 QCCN DIP QCCN DIP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 CHIP CARRIER IN-LINE CHIP CARRIER IN-LINE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 3.05 mm 5.72 mm 3.05 mm 5.72 mm
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V
表面贴装 YES NO YES NO
技术 CMOS CMOS CMOS CMOS
温度等级 MILITARY MILITARY MILITARY MILITARY
端子形式 NO LEAD THROUGH-HOLE NO LEAD THROUGH-HOLE
端子节距 1.27 mm 2.54 mm 1.27 mm 2.54 mm
端子位置 QUAD DUAL QUAD DUAL
宽度 11.43 mm 15.24 mm 11.43 mm 15.24 mm
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