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9013-E-T92-R

Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN

器件类别:分立半导体    晶体管   

厂商名称:UNISONIC TECHNOLOGIES CO.,LTD

厂商官网:http://www.unisonic.com.tw/

下载文档
器件参数
参数名称
属性值
是否Rohs认证
不符合
零件包装代码
TO-92
包装说明
TO-92, 3 PIN
针数
3
Reach Compliance Code
compliant
ECCN代码
EAR99
最大集电极电流 (IC)
0.5 A
集电极-发射极最大电压
20 V
配置
SINGLE
最小直流电流增益 (hFE)
78
JEDEC-95代码
TO-92
JESD-30 代码
O-PBCY-T3
JESD-609代码
e0
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
CYLINDRICAL
极性/信道类型
NPN
最大功率耗散 (Abs)
0.625 W
表面贴装
NO
端子面层
TIN LEAD
端子形式
THROUGH-HOLE
端子位置
BOTTOM
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
UNISONIC TECHNOLOGIES CO., LTD
9013
NPN EPITAXIAL SILICON TRANSISTOR
1W OUTPUT AMPLIFIER OF
POTABLE RADIOS IN CLASS
B PUSH-PULL OPERATION
FEATURES
* High total power dissipation. (625mW)
* High collector current. (500mA)
* Excellent h
FE
linearity.
* Complementary to UTC
9012
1
TO-92
ORDERING INFORMATION
Ordering Number
Normal
Lead Free
Halogen Free
9013-x-T92-B
9013L-x-T92-B
9013G-x-T92-B
9013-x-T92-K
9013L-x-T92-K
9013G-x-T92-K
9013-x-T92-R
9013L-x-T92-R
9013G-x-T92-R
Note: xx: Output Voltage, refer to Marking Information.
Package
TO-92
TO-92
TO-92
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
Packing
Tape Box
Bulk
Tape Reel
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., LTD
1 of 2
QW-R201-030.Ba
9013
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-base voltage
V
CBO
40
V
Collector-emitter voltage
V
CEO
20
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
500
mA
Collector dissipation
P
C
625
mW
Junction Temperature
T
J
125
Storage Temperature
T
STG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
V
BE(on)
TEST CONDITIONS
I
C
=-100μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100μA, I
C
=0
V
CB
=25V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=1V, I
C
=50mA
V
CE
=1V, I
C
=500mA
I
C
=-500mA, I
B
=-50mA
I
C
=-500mA, I
B
=-50mA
V
CE
=1V, I
C
=10mA
MIN
40
20
5
TYP
MAX
UNIT
V
V
V
nA
nA
64
40
0.6
120
120
0.16
0.91
0.67
100
100
300
0.6
1.2
0.7
V
V
V
CLASSIFICATION OF hFE1
RANK
RANGE
D
64-91
E
78-112
F
96-135
G
112-166
H
144-202
I
190-300
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 2
QW-R201-030.Ba
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