DISCRETE SEMICONDUCTORS
DATA SHEET
BSR13; BSR14
NPN switching transistors
Product data sheet
Supersedes data of 1999 Apr 15
2004 Jan 13
NXP Semiconductors
Product data sheet
NPN switching transistors
FEATURES
•
High current (max. 800 mA)
•
Low voltage (max. 40 V).
APPLICATIONS
•
Switching and linear applications.
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
PNP complements: BSR15 and BSR16.
MARKING
TYPE NUMBER
BSR13
BSR14
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
ORDERING INFORMATION
TYPE
NUMBER
BSR13
BSR14
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
MARKING CODE
(1)
U7*
U8*
Top view
handbook, halfpage
BSR13; BSR14
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
2
1
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
VERSION
SOT23
2004 Jan 13
2
NXP Semiconductors
Product data sheet
NPN switching transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
BSR13
BSR14
V
CEO
collector-emitter voltage
BSR13
BSR14
V
EBO
emitter-base voltage
BSR13
BSR14
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
open collector
−
−
−
−
−
−
−65
−
−65
open base
−
−
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
BSR13; BSR14
MIN.
MAX.
60
75
30
40
5
6
800
800
200
250
+150
150
+150
V
V
V
V
V
V
UNIT
mA
mA
mA
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
BSR13
collector cut-off current
BSR14
I
EBO
emitter cut-off current
BSR13
BSR14
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 60 V; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V
−
−
30
10
nA
nA
−
−
10
10
nA
µA
PARAMETER
collector cut-off current
I
E
= 0; V
CB
= 50 V
I
E
= 0; V
CB
= 50 V; T
j
= 150
°C
−
−
30
10
nA
µA
CONDITIONS
MIN.
MAX.
UNIT
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
500
UNIT
K/W
2004 Jan 13
3
NXP Semiconductors
Product data sheet
NPN switching transistors
BSR13; BSR14
SYMBOL
h
FE
PARAMETER
DC current gain
CONDITIONS
I
C
= 0.1 mA; V
CE
= 10 V; note 1
I
C
= 1 mA; V
CE
= 10 V; note 1
I
C
= 10 mA; V
CE
= 10 V; note 1
I
C
= 150 mA; V
CE
= 10 V; note 1
I
C
= 150 mA; V
CE
= 1 V; note 1
MIN.
35
50
75
100
50
30
40
−
−
−
MAX.
UNIT
300
−
−
−
400
300
1 .6
1
1 .3
1.2
2 .6
2
8
−
−
mV
mV
V
V
V
V
V
V
pF
MHz
MHz
DC current gain
BSR13
BSR14
V
CEsat
collector-emitter saturation voltage
BSR13
BSR14
collector-emitter saturation voltage
BSR13
BSR14
V
BEsat
base-emitter saturation voltage
BSR13
BSR14
base-emitter saturation voltage
BSR13
BSR14
C
c
f
T
collector capacitance
transition frequency
BSR13
BSR14
I
C
= 500 mA; V
CE
= 10 V; note 1
I
C
= 150 mA; I
B
= 15 mA
−
−
I
C
= 500 mA; I
B
= 50 mA
−
−
I
C
= 150 mA; I
B
= 15 mA
−
0.6
I
C
= 500 mA; I
B
= 50 mA
−
−
I
E
= I
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 20 mA; V
CE
= 20 V;
f = 100 MHz
−
250
300
−
−
−
−
−
−
Switching times (between 10% and 90% levels);
see Fig.2
t
on
t
d
t
r
t
off
t
s
t
f
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
= 150 mA; I
Bon
= 15 mA;
I
Boff
=
−15
mA
35
15
20
250
200
60
ns
ns
ns
ns
ns
ns
2004 Jan 13
4
NXP Semiconductors
Product data sheet
NPN switching transistors
BSR13; BSR14
handbook, full pagewidth
VBB
VCC
RB
oscilloscope
Vi
R1
(probe)
450
Ω
R2
RC
Vo
(probe)
450
Ω
DUT
oscilloscope
MLB826
V
i
= 9.5 V; T = 500
µs;
t
p
= 10
µs;
t
r
= t
f
≤
3 ns.
R1 = 68
Ω;
R2 = 325
Ω;
R
B
= 325
Ω;
R
C
= 160
Ω.
V
BB
=
−3.5
V; V
CC
= 29.5 V.
Oscilloscope: input impedance Z
i
=
≥
100
Ω.
Fig.2 Test circuit for switching times.
2004 Jan 13
5
