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DISCRETE SEMICONDUCTORS
DATA SHEET
BC849; BC850
NPN general purpose transistors
Product data sheet
Supersedes data of 1999 Apr 08
2004 Jan 16
NXP Semiconductors
Product data sheet
NPN general purpose transistors
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 45 V).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complements: BC859 and BC860.
MARKING
handbook, halfpage
BC849; BC850
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
TYPE
NUMBER
BC849B
BC849C
Note
MARKING
CODE
(1)
2B*
2C*
TYPE
NUMBER
BC850B
BC850C
MARKING
CODE
(1)
2F*
2G*
Top view
1
2
MAM255
2
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
ORDERING INFORMATION
TYPE
NUMBER
BC849B
BC849C
BC850B
BC850C
Fig.1 Simplified outline (SOT23) and symbol.
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
2004 Jan 16
2
NXP Semiconductors
Product data sheet
NPN general purpose transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
BC849
BC850
V
CEO
collector-emitter voltage
BC849
BC850
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
−
−
−
−
−
−
−
−65
−
−65
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
MIN.
BC849; BC850
MAX.
30
50
30
45
5
100
200
200
250
+150
150
+150
V
V
V
V
V
UNIT
mA
mA
mA
mW
°C
°C
°C
VALUE
500
UNIT
K/W
2004 Jan 16
3
NXP Semiconductors
Product data sheet
NPN general purpose transistors
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
BC849B; BC850B
BC849C; BC850C
DC current gain
BC849B; BC850B
BC849C; BC850C
V
CEsat
V
BEsat
V
BE
C
c
C
e
f
T
F
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 10 mA; I
B
= 0.5 mA; note 1
I
C
= 100 mA; I
B
= 5 mA; note 1
I
C
= 2 mA; V
CE
= 5 V; note 2
I
C
= 10 mA; V
CE
= 5 V; note 2
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
I
C
= 200
μA;
V
CE
= 5 V; R
S
= 2 kΩ;
f = 10 Hz to 15.7 kHz
I
C
= 200
μA;
V
CE
= 5 V; R
S
= 2 kΩ;
f = 1 kHz; B = 200 Hz
Notes
1. V
BEsat
decreases by about 1.7 mV/K with increasing temperature.
2. V
BE
decreases by about 2 mV/K with increasing temperature.
I
C
= 2 mA; V
CE
= 5 V;
see Figs 2 and 3
CONDITIONS
I
E
= 0; V
CB
= 30 V
I
E
= 0; V
CB
= 30 V; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V
I
C
= 10
μA;
V
CE
= 5 V;
see Figs 2 and 3
MIN.
−
−
−
−
−
200
420
−
−
−
−
580
−
−
100
−
−
BC849; BC850
TYP.
−
−
−
240
450
290
520
90
200
700
900
660
−
2.5
11
−
−
−
MAX.
15
5
100
−
−
450
800
250
600
−
−
700
770
−
−
−
4
4
UNIT
nA
μA
nA
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
dB
I
C
= i
c
= 0; V
EB
= 500 mV; f = 1 MHz
−
2004 Jan 16
4
工控电子
