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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BC856T; BC857T series
PNP general purpose transistors
Product data sheet
Supersedes data of 1999 Apr 26
2000 Nov 15
NXP Semiconductors
Product data sheet
PNP general purpose transistors
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 65 V).
APPLICATIONS
•
General purpose switching and amplification, especially
in portable equipment.
DESCRIPTION
PNP transistor in an SC-75 (SOT416) plastic package.
NPN complements: BC846T; BC847T series.
MARKING
TYPE NUMBER
BC856AT
BC856BT
BC857AT
BC857BT
BC857CT
MARKING CODE
3A
3B
3E
3F
3G
Fig.1
handbook, halfpage
BC856T; BC857T
series
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
1
Top view
2
2
MAM362
Simplified outline (SC-75; SOT416) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
PARAMETER
collector-base voltage
BC856AT; BC856BT
BC857AT; BC857BT; BC857CT
V
CEO
collector-emitter voltage
BC856AT; BC856BT
BC857AT; BC857BT; BC857CT
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
−
−
−
−
−
−
−
−65
−
−65
−65
−45
−5
−100
−200
−100
150
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
CONDITIONS
open emitter
−
−
−80
−50
V
V
MIN.
MAX.
UNIT
2000 Nov 15
2
NXP Semiconductors
Product data sheet
PNP general purpose transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
CONDITIONS
PARAMETER
thermal resistance from junction to ambient
BC856T; BC857T series
CONDITIONS
in free air; note 1
VALUE
833
UNIT
K/W
MIN.
−
−
−
125
220
420
−
−
−
−
−
−
−
−
−
−
−
TYP.
MAX.
−15
−5
−100
250
475
800
−200
−400
−700
−770
2.5
−
−
10
UNIT
nA
μA
nA
collector-base cut-off current V
CB
=
−30
V; I
E
= 0
V
CB
=
−30
V; I
E
= 0; T
j
= 150
°C
emitter cut-off current
DC current gain
BC856AT; BC857AT
BC856BT; BC857BT
BC857CT
V
EB
=
−5
V; I
C
= 0
V
CE
=
−5
V; I
C
=
−2
mA
V
CEsat
V
BE
C
c
C
e
f
T
F
Note
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
I
C
=
−10
mA; I
B
=
−0.5
mA
I
C
=
−100
mA; I
B
=
−5
mA; note 1
I
C
=
−2
mA; V
CE
=
−5
V
I
C
=
−10
mA; V
CE
=
−5
V
V
CB
=
−10
V; f = 1 MHz; I
E
= i
e
= 0
V
EB
=
−0.5
V; f = 1 MHz; I
C
= i
c
= 0
I
C
=
−10
mA; V
CE
=
−5
V;
f = 100 MHz
I
C
=
−200 μA;
V
CE
=
−5
V;
R
S
= 2 kΩ; f = 1 kHz; B = 200 Hz
−
−
−580
−
−
−
100
−
mV
mV
mV
mV
pF
pF
MHz
dB
10
−
−
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
2000 Nov 15
3
NXP Semiconductors
Product data sheet
PNP general purpose transistors
GRAPHICAL INFORMATION BC857AT
MGT711
BC856T; BC857T series
handbook, halfpage
500
handbook, halfpage
hFE
400
(1)
−1200
VBE
(mV)
−1000
−800
MGT712
(1)
300
(2)
−600
200
(2)
−400
100
(3)
(3)
−200
0
−10
−2
−10
−1
−1
−10
−10
2
−10
3
I C (mA)
0
−10
−2
−10
−1
−1
−10
V
CE
=
−5
V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
V
CE
=
−5
V.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
−10
2
−10
3
I C (mA)
Fig.3
Fig.2 DC current gain; typical values.
Base-emitter voltage as a function of
collector current; typical values.
−10
4
handbook, halfpage
VCEsat
(mV)
−10
3
MGT713
handbook, halfpage
−1200
VBEsat
(mV)
−1000
−800
−600
MGT714
(1)
(2)
(3)
−10
2
(1)
−400
−200
(3) (2)
−10
−10
−1
I
C
/I
B
= 20.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
−1
−10
−10
2
−10
3
I C (mA)
0
−10
−1
I
C
/I
B
= 20.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
−1
−10
−10
2
−10
3
I C (mA)
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
2000 Nov 15
4
