首页 > 器件类别 > 分立半导体 > 晶体管

934055878118

TRANSISTOR 75 A, 55 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power

器件类别:分立半导体    晶体管   

厂商名称:NXP(恩智浦)

厂商官网:https://www.nxp.com

器件标准:  

下载文档
器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
包装说明
PLASTIC, D2PAK-3
针数
3
Reach Compliance Code
unknown
ECCN代码
EAR99
雪崩能效等级(Eas)
211 mJ
外壳连接
DRAIN
配置
SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压
55 V
最大漏极电流 (ID)
75 A
最大漏源导通电阻
0.011 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
JESD-30 代码
R-PSSO-G2
元件数量
1
端子数量
2
工作模式
ENHANCEMENT MODE
最高工作温度
175 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
N-CHANNEL
最大脉冲漏极电流 (IDM)
247 A
认证状态
Not Qualified
表面贴装
YES
端子形式
GULL WING
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
BUK7511-55A; BUK7611-55A
TrenchMOS™ standard level FET
Rev. 01 — 1 February 2001
Product specification
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK7511-55A in SOT78 (TO-220AB)
BUK7611-55A in SOT404
(D
2
-PAK).
2. Features
s
s
s
s
TrenchMOS™ technology
Q101 compliant
175
°C
rated
Standard level compatible.
3. Applications
c
c
s
Automotive and general purpose power switching:
x
12 V and 24 V loads
x
Motors, lamps and solenoids.
4. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT78, SOT404, simplified outline and symbol
Description
gate (g)
mb
Simplified outline
Symbol
drain (d)
source (s)
mounting base;
connected to drain (d)
mb
d
g
s
2
MBK106
MBB076
1
3
MBK116
1 2 3
SOT78 (TO-220AB)
SOT404 (D
2
-PAK)
Philips Semiconductors
BUK7511-55A; BUK7611-55A
TrenchMOS™ standard level FET
5. Quick reference data
Table 2:
V
DS
I
D
P
tot
T
j
R
DSon
Quick reference data
Conditions
T
mb
= 25
°C;
V
GS
= 10 V
T
mb
= 25
°C
V
GS
= 10 V; I
D
= 25 A
T
j
= 25
°C
T
j
= 175
°C
9
11
22
Typ
Max
55
75
166
175
Unit
V
A
W
°C
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
Symbol Parameter
m
m
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
V
DGR
V
GS
I
D
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
T
mb
= 25
°C;
V
GS
= 10 V;
Figure 2
and
3
T
mb
= 100
°C;
V
GS
= 10 V;
Figure 2
I
DM
P
tot
T
stg
T
j
I
DR
I
DRM
W
DSS
peak drain current
total power dissipation
storage temperature
operating junction temperature
reverse drain current (DC)
pulsed reverse drain current
non-repetitive avalanche energy
T
mb
= 25
°C
T
mb
= 25
°C;
pulsed; t
p
10
µs
unclamped inductive load; I
D
= 65 A;
V
DS
55 V; V
GS
= 10 V; R
GS
= 50
Ω;
starting T
mb
= 25
°C
T
mb
= 25
°C;
pulsed; t
p
10
µs;
Figure 3
T
mb
= 25
°C;
Figure 1
R
GS
= 20 kΩ
Conditions
Min
−55
−55
Max
55
55
±20
75
61
347
166
+175
+175
75
347
211
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
Source-drain diode
Avalanche ruggedness
9397 750 07817
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 1 February 2001
2 of 15
Philips Semiconductors
BUK7511-55A; BUK7611-55A
TrenchMOS™ standard level FET
03aa24
120
Pder
(%)
100
03na19
120
I
der
(%)
100
80
80
60
60
40
40
20
20
0
0
25
50
75
100
125
150
Tmb
0
175 200
(oC)
0
25
50
75
100
125
150
175 200
o
Tmb ( C)
P
tot
P
der
=
----------------------
×
100%
P
°
tot
(
25 C
)
V
GS
4.5 V
I
D
I
der
=
------------------
×
100%
-
I
°
D
(
25 C
)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
103
ID
(A)
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03nd26
RDSon = VDS/ ID
tp = 10 us
100 us
102
10
P
δ
=
tp
T
1 ms
D.C.
10 ms
100 ms
tp
T
t
1
1
10
VDS (V)
102
T
mb
= 25
°C;
I
DM
single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07817
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 1 February 2001
3 of 15
Philips Semiconductors
BUK7511-55A; BUK7611-55A
TrenchMOS™ standard level FET
7. Thermal characteristics
Table 4:
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
Conditions
vertical in still air; SOT78 package
mounted on printed circuit board;
minimum footprint; SOT404
package
R
th(j-mb)
thermal resistance from junction to mounting
base
Figure 4
Value
60
50
Unit
K/W
K/W
0.9
K/W
7.1 Transient thermal impedance
1
Zth(j-mb)
03nd27
(K/W)
δ
= 0.5
0.2
10-1
0.1
0.05
0.02
10-2
Single Shot
P
δ
=
tp
T
tp
t
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 07817
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 1 February 2001
4 of 15
Philips Semiconductors
BUK7511-55A; BUK7611-55A
TrenchMOS™ standard level FET
8. Characteristics
Table 5: Characteristics
T
j
= 25
°
C unless otherwise specified
Symbol
V
(BR)DSS
Parameter
drain-source breakdown
voltage
Conditions
I
D
= 0.25 mA; V
GS
= 0 V
T
j
= 25
°C
T
j
=
−55 °C
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°C
T
j
= 175
°C
T
j
=
−55 °C
I
DSS
drain-source leakage current
V
DS
= 55 V; V
GS
= 0 V
T
j
= 25
°C
T
j
= 175
°C
I
GSS
R
DSon
gate-source leakage current
drain-source on-state
resistance
V
GS
=
±20
V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 25 A;
Figure 7
and
8
T
j
= 25
°C
T
j
= 175
°C
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
d
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
from drain lead 6 mm from
package to centre of die
from contact screw on
mounting base to centre of
die SOT78
from upper edge of drain
mounting base to centre of
die SOT404
L
s
internal source inductance
from source lead to source
bond pad
V
DD
= 30 V; R
L
= 1.2
Ω;
V
GS
= 10 V; R
G
= 10
Ω;
V
GS
= 0 V; V
DS
= 25 V;
f = 1 MHz;
Figure 12
2230
510
290
18
90
84
68
4.5
3.5
3093
645
467
pF
pF
pF
ns
ns
ns
ns
nH
nH
9
11
22
mΩ
mΩ
0.05
2
10
500
100
µA
µA
nA
2
1
3
4
4.4
V
V
V
55
50
V
V
Min
Typ
Max
Unit
Static characteristics
2.5
nH
7.5
nH
9397 750 07817
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 1 February 2001
5 of 15
查看更多>
参数对比
与934055878118相近的元器件有:934055877127。描述及对比如下:
型号 934055878118 934055877127
描述 TRANSISTOR 75 A, 55 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power TRANSISTOR 75 A, 55 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power
是否Rohs认证 符合 符合
包装说明 PLASTIC, D2PAK-3 FLANGE MOUNT, R-PSFM-T3
针数 3 3
Reach Compliance Code unknown unknown
ECCN代码 EAR99 EAR99
雪崩能效等级(Eas) 211 mJ 211 mJ
外壳连接 DRAIN DRAIN
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 55 V 55 V
最大漏极电流 (ID) 75 A 75 A
最大漏源导通电阻 0.011 Ω 0.011 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 R-PSSO-G2 R-PSFM-T3
元件数量 1 1
端子数量 2 3
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE
最高工作温度 175 °C 175 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE FLANGE MOUNT
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED
极性/信道类型 N-CHANNEL N-CHANNEL
最大脉冲漏极电流 (IDM) 247 A 347 A
认证状态 Not Qualified Not Qualified
表面贴装 YES NO
端子形式 GULL WING THROUGH-HOLE
端子位置 SINGLE SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON
Base Number Matches 1 1
请推荐几本电路设计的书
请推荐几本电路设计的书 请推荐几本电路设计的书 电路设计涉及的领域众多,必须细分。但就楼主而言,...
深圳小花 单片机
如何用eVC读取触摸屏的寄存器,在线等
1.问题如题 2.触摸屏的尺寸,型号等参数是不是存储在触摸屏的寄存器中呢? 谢谢回答 如何用eVC读...
houmeijiao123 嵌入式系统
【 XMC4800 Relax EtherCAT Kit测评】01-开箱美照 ---袋鼠哥
很荣幸能参加 XMC4800 Relax EtherCAT Kit 测评,感谢EEworld...
longmotto 工控电子
想学习STM32的USB
以前没有学习USB,现在想学习STM32的USB,但不知道如何下手...
liaoyh stm32/stm8
今年清单中的AV端口摄像头有推荐吗?
从来没有做过摄像头,想了解一下,淘宝上一搜全是电脑摄像头,我捉摸着比赛应该不是用这种吧,所以向亲们...
送故事的妖怪 电子竞赛
采用pyTorch训练CNN的讨论
采用pyTorch训练CNN,既可以在CPU上,也可以在GPU上训练。 1、安装支持GPU的py...
ljg2np 综合技术交流
热门器件
热门资源推荐
器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
需要登录后才可以下载。
登录取消