型号
- 型号
- 关键词
TRANSISTOR 42 A, 55 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power
厂商名称：NXP(恩智浦)
厂商官网：https://www.nxp.com
器件标准：
| 型号 | 934056256127 | 934056266118 |
|---|---|---|
| 描述 | TRANSISTOR 42 A, 55 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power | TRANSISTOR 42 A, 55 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power |
| 是否Rohs认证 | 符合 | 符合 |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 | PLASTIC, D2PAK-3 |
| 针数 | 3 | 3 |
| Reach Compliance Code | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 |
| 雪崩能效等级（Eas） | 57.8 mJ | 57.8 mJ |
| 外壳连接 | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 55 V | 55 V |
| 最大漏极电流 (ID) | 42 A | 42 A |
| 最大漏源导通电阻 | 0.03 Ω | 0.03 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PSFM-T3 | R-PSSO-G2 |
| JESD-609代码 | e3 | e3 |
| 元件数量 | 1 | 1 |
| 端子数量 | 3 | 2 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 168 A | 168 A |
| 认证状态 | Not Qualified | Not Qualified |
| 表面贴装 | NO | YES |
| 端子面层 | TIN | TIN |
| 端子形式 | THROUGH-HOLE | GULL WING |
| 端子位置 | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON |