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BUK765R2-40B
N-channel TrenchMOS standard level FET
Rev. 3 — 22 November 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
gate-drain charge
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
V
GS
= 10 V; T
mb
= 25 °C; see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 11;
see
Figure 12
V
GS
= 10 V; I
D
= 25 A; V
DS
= 32 V;
T
j
= 25 °C; see
Figure 13
I
D
= 75 A; V
sup
≤
40 V; R
GS
= 50
Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
[1]
Min
-
-
-
-
Typ
-
-
-
4.4
Max
40
75
203
5.2
Unit
V
A
W
mΩ
Static characteristics
Dynamic characteristics
Q
GD
-
16
-
nC
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
-
-
494
mJ
[1]
Continuous current is limited by package.
NXP Semiconductors
BUK765R2-40B
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
[1]
source
mounting base; connected to drain
mbb076
Simplified outline
mb
Graphic symbol
D
G
S
2
1
3
SOT404 (D2PAK)
[1]
It is not possible to make a connection to pin 2.
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK765R2-40B
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Type number
BUK765R2-40B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 22 November 2011
2 of 14
NXP Semiconductors
BUK765R2-40B
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1;
see
Figure 3
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 1
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
T
mb
= 25 °C
pulsed; t
p
≤
10 µs; T
mb
= 25 °C
I
D
= 75 A; V
sup
≤
40 V; R
GS
= 50
Ω;
V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
[1]
[2]
[1]
[2]
[2]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-
-55
-55
-
-
-
-
Max
40
40
20
143
75
75
573
203
175
175
143
75
573
494
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
mJ
T
mb
= 25 °C; pulsed; t
p
≤
10 µs; see
Figure 3
T
mb
= 25 °C; see
Figure 2
Source-drain diode
Avalanche ruggedness
[1]
[2]
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
150
03nj26
120
P
der
(%)
80
03na19
I
D
(A)
100
Capped at 75 A due to package
50
40
0
0
0
50
100
150
T
mb
(°C)
200
0
50
100
150
T
mb
(°C)
200
Fig 1.
Continuous drain current as a function of
mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
BUK765R2-40B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 22 November 2011
3 of 14
NXP Semiconductors
BUK765R2-40B
N-channel TrenchMOS standard level FET
10
3
I
D
(A)
10
2
Limit R
DSon
= V
DS
/ I
D
03nj24
t
p
=10
μ
s
100
μ
s
Capped at 75A due to package
10
DC
1
1 ms
10 ms
100 ms
10
-1
10
-1
1
10
10
2
V
DS
(V)
10
3
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK765R2-40B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 22 November 2011
4 of 14
