Freescale Semiconductor
Technical Data
Document Number: A2G22S251--01S
Rev. 0, 5/2016
RF Power GaN Transistor
This 48 W RF power GaN transistor is designed for cellular base station
applications covering the frequency range of 1805 to 2200 MHz.
This part is characterized and performance is guaranteed for applications
operating in the 1805 to 2200 MHz band. There is no guarantee of performance
when this part is used in applications designed outside of these frequencies.
2000 MHz
Typical Single--Carrier W--CDMA Performance: V
DD
= 48 Vdc,
I
DQ
= 200 mA, P
out
= 48 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
1805 MHz
1990 MHz
2170 MHz
G
ps
(dB)
17.4
17.3
17.7
D
(%)
33.5
34.3
37.5
Output PAR
(dB)
7.0
7.1
6.8
ACPR
(dBc)
–34.7
–35.1
–33.2
IRL
(dB)
–14
–11
–12
NI-
-400S-
-2S
A2G22S251-
-01SR3
1805–2200 MHz, 48 W AVG., 48 V
AIRFAST RF POWER GaN
TRANSISTOR
Features
High Terminal Impedances for Optimal Broadband Performance
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
RF
in
/V
GS
2
1 RF
out
/V
DS
(Top View)
Figure 1. Pin Connections
Freescale Semiconductor, Inc., 2016. All rights reserved.
A2G22S251-
-01SR3
1
RF Device Data
Freescale Semiconductor, Inc.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Maximum Forward Gate Current @ T
C
= 25C
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range
Absolute Maximum Junction Temperature
(1)
Symbol
V
DSS
V
GS
V
DD
I
GMAX
T
stg
T
C
T
J
T
MAX
Value
125
–8, 0
0 to +55
24
– 65 to +150
– 55 to +150
– 55 to +225
275
Unit
Vdc
Vdc
Vdc
mA
C
C
C
C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance by Infrared Measurement, Active Die Surface--to--Case
Case Temperature 84C, P
D
= 88 W
Thermal Resistance by Finite Element Analysis, Junction--to--Case
Case Temperature 85C, P
D
= 80 W
Symbol
R
JC
(IR)
R
JC
(FEA)
Value
1.3
(2)
1.75
(3)
Unit
C/W
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2
B
II
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Off Characteristics
Drain--Source Breakdown Voltage
(V
GS
= –8 Vdc, I
D
= 20 mAdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 20 mAdc)
Gate Quiescent Voltage
(V
DD
= 48 Vdc, I
D
= 200 mAdc, Measured in Functional Test)
Gate--Source Leakage Current
(V
DS
= 0 Vdc, V
GS
= –5 Vdc)
V
GS(th)
V
GS(Q)
I
GSS
–3.8
–3.6
–7.5
–3.0
–3.1
—
–2.3
–2.3
—
Vdc
Vdc
mAdc
V
(BR)DSS
150
—
—
Vdc
Symbol
Min
Typ
Max
Unit
1. Functional operation above 225C has not been characterized and is not implied. Operation at T
MAX
(275C) reduces median time to failure
by an order of magnitude; operation beyond T
MAX
could cause permanent damage.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to
http://www.nxp.com/RF
and search for AN1955.
3. R
JC
(FEA) must be used for purposes related to reliability and limitations on maximum junction temperature. MTTF may be estimated by the
expression MTTF (hours) = 10
[A + B/(T + 273)]
, where
T
is the junction temperature in degrees Celsius,
A
= –10.3 and
B
= 8260.
(continued)
A2G22S251-
-01SR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(1)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 48 Vdc, I
DQ
= 200 mA, P
out
= 48 W Avg., f = 2170 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
5
MHz Offset.
[See note on correct biasing sequence.]
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
VSWR 10:1 at 55 Vdc, 250 W Pulsed CW Output Power
(3 dB Input Overdrive from 170 W Pulsed CW Rated Power)
G
ps
D
PAR
ACPR
IRL
16.2
33.5
6.2
—
—
17.7
37.5
6.8
–33.2
–12
No Device Degradation
19.2
—
—
–30
–5
dB
%
dB
dBc
dB
Load Mismatch
(In Freescale Test Fixture, 50 ohm system) I
DQ
= 200 mA, f = 1990 MHz, 12
sec(on),
10% Duty Cycle
Typical Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 48 Vdc, I
DQ
= 200 mA, 1805–2170 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW
P
out
@ 3 dB Compression Point
(2)
AM/PM
(Maximum value measured at the P3dB compression point across
the 1805–2170 MHz bandwidth)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 365 MHz Bandwidth @ P
out
= 48 W Avg.
Gain Variation over Temperature
(–30C to +85C)
Output Power Variation over Temperature
(–30C to +85C)
P1dB
P3dB
—
—
—
158
195
–16.9
—
—
—
W
W
VBW
res
G
F
G
P1dB
—
—
—
—
140
0.36
0.014
0.002
—
—
—
—
MHz
dB
dB/C
dB/C
Table 5. Ordering Information
Device
A2G22S251--01SR3
Tape and Reel Information
R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel
NI--400S--2S
Package
1. Part internally input matched.
2. P3dB = P
avg
+ 7.0 dB where P
avg
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
NOTE: Correct Biasing Sequence for GaN Depletion Mode Transistors
Turning the device ON
1. Set V
GS
to the pinch--off (V
P
) voltage, typically –5 V
2. Turn on V
DS
to nominal supply voltage (50 V)
3. Increase V
GS
until I
DS
current is attained
4. Apply RF input power to desired level
Turning the device OFF
1. Turn RF power off
2. Reduce V
GS
down to V
P
, typically –5 V
3. Reduce V
DS
down to 0 V (Adequate time must be allowed
for V
DS
to reduce to 0 V to prevent severe damage to device.)
4. Turn off V
GS
A2G22S251-
-01SR3
RF Device Data
Freescale Semiconductor, Inc.
3
V
GG
R2
V
DD
C14
C12
C7
R1
C8 C13
C1
C2
C3
C4
C5
C6
CUT OUT AREA
C10
C9
C11
A2G22S251--01S
Rev. 2
D81388
Figure 2. A2G22S251-
-01SR3 Test Circuit Component Layout
Table 6. A2G22S251-
-01SR3 Test Circuit Component Designations and Values
Part
C1
C2, C3
C4, C11
C5, C7
C6
C8, C9, C10
C12, C13
C14
R1
R2
PCB
Description
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10
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220
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100 V Electrolytic Capacitor
3.9
,
1/4 W Chip Resistor
1.5 k, 1/4 W Chip Resistor
Rogers RO4350B, 0.020,
r
= 3.66
Part Number
ATC600F1R8BT250XT
ATC600F1R5BT250XT
ATC600F0R3BT250XT
ATC600F110JT250XT
ATC600F0R6BT250XT
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C5750X7S2A106M230KB
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D81388
Manufacturer
ATC
ATC
ATC
ATC
ATC
ATC
TDK
Multicomp
Vishay
Vishay
MTL
A2G22S251-
-01SR3
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 1805–2170 MHz
V
DD
= 48 Vdc, P
out
= 48 W (Avg.), I
DQ
= 200 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
D
, DRAIN
EFFICIENCY (%)
18.6
18.4
18.2
G
ps
, POWER GAIN (dB)
18
17.8
17.6
17.4
17.2
17
16.8
16.6
1740
1800
1860
IRL
ACPR
1920 1980 2040
f, FREQUENCY (MHz)
2100
2160
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
G
ps
PARC
40
D
38
36
34
32
–31
ACPR (dBc)
–32
–33
–34
–35
–36
2220
–6
–9
–12
–15
–18
–21
IRL, INPUT RETURN LOSS (dB)
–2.6
–2.8
–3
–3.2
–3.4
–3.6
PARC (dB)
Figure 3. Single-
-Carrier Output Peak- -Average Ratio Compression
-to-
(PARC) Broadband Performance @ P
out
= 48 Watts Avg.
0
–15
–30
–45
IM7--L
–60
–75
IM7--U
IM5--L
IM5--U
V
DD
= 48 Vdc, P
out
= 70 W (PEP), I
DQ
= 200 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1990 MHz
IM3--U
IM3--L
IMD, INTERMODULATION DISTORTION (dBc)
1
10
TWO--TONE SPACING (MHz)
100
300
Figure 4. Intermodulation Distortion Products
versus Two-
-Tone Spacing
19
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
18.5
G
ps
, POWER GAIN (dB)
18
17.5
17
16.5
16
1
0
–1
–2
–3
–4
–5
–3 dB = 51.6W
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
0
15
30
45
P
out
, OUTPUT POWER (WATTS)
60
75
–1 dB = 21.5 W
60
50
40
30
20
10
0
0
–10
–20
–30
–40
–50
–60
ACPR (dBc)
V
DD
= 48 Vdc, I
DQ
= 200 mA, f = 1990 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
–2 dB = 36.8 W
D
ACPR
G
ps
PARC
Figure 5. Output Peak- -Average Ratio
-to-
Compression (PARC) versus Output Power
D
DRAIN EFFICIENCY (%)
A2G22S251-
-01SR3
RF Device Data
Freescale Semiconductor, Inc.
5
