23.5–26.5 GHz GaAs MMIC
Power Amplifier
AA026P2-00
Features
I
Single Bias Supply Operation (6 V)
I
17 dB Typical Small Signal Gain
I
24 dBm Typical P
1 dB
Output Power
at 26.5 GHz
I
100% On-Wafer RF and DC Testing
I
100% Visual Inspection to MIL-STD
MT 2010
0.130
1.014
Chip Outline
3.080
2.960
2.068
Description
Alpha’s three-stage balanced K band GaAs MMIC power
amplifier has a typical P
1 dB
of 24 dBm and a typical P
SAT
of 26 dBm at 26.5 GHz. The chip uses Alpha’s proven
0.25
µm
MESFET technology, and is based upon MBE
layers and electron beam lithography for the highest
uniformity and repeatability. The FETs employ surface
passivation to ensure a rugged, reliable part with
through-substrate via holes and gold-based backside
metallization to facilitate a conductive epoxy die attach
process. All chips are screened for small signal
S-parameters and power characteristics prior to shipment
for guaranteed performance. A broad range of
applications exist in both the commercial and military
areas where high power and gain are required.
0.000
0.000
0.605
1.271
2.510
3.230
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Absolute Maximum Ratings
Characteristic
Operating Temperature (T
C
)
Storage Temperature (T
ST
)
Bias Voltage (V
D
)
Power In (P
IN
)
Junction Temperature (T
J
)
Value
-55°C to +90°C
-65°C to +150°C
7 V
DC
22 dBm
175°C
Electrical Specifications at 25°C (V
DS
= 6 V)
Parameter
Drain Current (at Saturation)
Small Signal Gain
Input Return Loss
Output Return Loss
Output Power at 1 dB Gain Compression
Saturated Output Power
Gain at Saturation
Thermal
Resistance
1
F = 23.5–26.5 GHz
F = 23.5–26.5 GHz
F = 23.5–26.5 GHz
F = 26.5 GHz
F = 26.5 GHz
F = 26.5 GHz
Condition
Symbol
I
DS
G
RL
I
RL
O
P
1 dB
P
SAT
G
SAT
Θ
JC
23
24
15
Min.
Typ.
2
520
17
-17
-20
24
26
14
17
-10
-10
Max.
700
Unit
mA
dB
dB
dB
dBm
dBm
dB
°C/W
1. Calculated value based on measurement of discrete FET.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.
Alpha Industries, Inc.
[781] 935-5150
•
Fax
[617] 824-4579
•
Email
sales@alphaind.com
•
www.alphaind.com
Specifications subject to change without notice. 12/99A
1
23.5–26.5 GHz GaAs MMIC Power Amplifier
AA026P2-00
Typical Performance Data
20
10
0
S
21
25
30
-10
-20
S
22
S
11
P
OUT
(dBm)
20
15
10
5
0
-10
(dB)
-30
-40
-50
20 21 22 23 24 25 26 27 28 29 30
-7
-4
-1
2
5
8
11
Frequency (GHz)
P
IN
(dBm)
Typical Small Signal Performance
S-Parameters (V
DS
= 6 V)
Output Characteristics as a
Function of Input Drive Level
(F = 26.5 GHz, V
DS
= 6 V)
Bias Arrangement
6V
.01
µF
50 pF
Circuit Schematic
RF IN
Detail A
V
DS
RF OUT
RF IN
6V
.01
µF
50 pF
SEE
DETAIL A
RF OUT
For biasing on, adjust V
DS
from zero to the desired value
(6 V recommended). For biasing off, reverse the biasing on procedure.
V
DS
2
Alpha Industries, Inc.
[781] 935-5150
•
Fax
[617] 824-4579
•
Email
sales@alphaind.com
•
www.alphaind.com
Specifications subject to change without notice. 12/99A
