ADG466BN

20 mA, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

器件参数

参数名称

属性值

端子数量

加工封装描述

MICRO, RM-8, SOIC-8

状态

ACTIVE

包装形状

RECTANGULAR

包装尺寸

SMALL OUTLINE

表面贴装

Yes

端子形式

GULL WING

端子涂层

TIN LEAD

端子位置

DUAL

包装材料

PLASTIC/EPOXY

晶体管应用

SWITCHING

晶体管元件材料

SILICON

通道类型

N-CHANNEL

场效应晶体管技术

METAL-OXIDE SEMICONDUCTOR

操作模式

ENHANCEMENT

晶体管类型

GENERAL PURPOSE SMALL SIGNAL

最大漏电流

0.0200 A

最大漏极导通电阻

80 ohm

参数对比

与ADG466BN相近的元器件有：ADG466、ADG466BRM、ADG466BR、ADG467。描述及对比如下：

型号	ADG466BN	ADG466	ADG466BRM	ADG466BR	ADG467
描述	20 mA, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	20 mA, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	20 mA, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	20 mA, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	20 mA, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
端子数量	8	8	8	8	8
加工封装描述	MICRO, RM-8, SOIC-8	MICRO, RM-8, SOIC-8	MICRO, RM-8, SOIC-8	MICRO, RM-8, SOIC-8	MICRO, RM-8, SOIC-8
状态	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE
包装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
包装尺寸	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
表面贴装	Yes	Yes	Yes	Yes	Yes
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子涂层	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL
包装材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON
通道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
场效应晶体管技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
操作模式	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT
晶体管类型	GENERAL PURPOSE SMALL SIGNAL	GENERAL PURPOSE SMALL SIGNAL	GENERAL PURPOSE SMALL SIGNAL	GENERAL PURPOSE SMALL SIGNAL	GENERAL PURPOSE SMALL SIGNAL
最大漏电流	0.0200 A	0.0200 A	0.0200 A	0.0200 A	0.0200 A
最大漏极导通电阻	80 ohm	80 ohm	80 ohm	80 ohm	80 ohm