Low Noise/Medium Power
GaAs MESFET Chips
AFM04P3-212, AFM04P3-213
Features
s
Low Noise Figure, 0.6 dB @ 4 GHz
s
20 dBm Output Power @ 18 GHz
s
High Associated Gain, 13 dB @ 4 GHz
s
High Power Added Efficiency, 25%
s
Broadband Operation, DC–26 GHz
s
Available in Tape and Reel Packaging
Source
212
Gate
Drain
Source
Gate
Source
Drain
213
Source
Description
The AFM04P3-212, 213 are high performance power
GaAs MESFET chips having a gate length of 0.25
µm
and
a total gate periphery of 400
µm.
These devices have
excellent gain and power performance through 26 GHz,
making them suitable for a wide range of commercial and
military applications in oscillator and amplifier circuits. They
also have excellent noise performance and can be used
in the first and second stage of low noise amplifier design.
The AFM04P3 employs Ti/Pd/Au gate metallization and
surface passivation to ensure a rugged, reliable part.
Absolute Maximum Ratings
Characteristic
Drain to Source Voltage (V
DS
)
Gate to Source Voltage (V
GS
)
Drain Current (I
DS
)
Gate Current (I
GS
)
Total Power Dissipation (P
T
)
Storage Temperature (T
ST
)
Channel Temperature (T
CH
)
Value
6V
-4 V
I
DSS
1 mA
700 mW
-65 to +150°C
175°C
Electrical Specifications at 25°C
Parameter
Saturated Drain Current (I
DSS
)
Transconductance (gm)
Pinch-Off Voltage (V
P
)
Gate to Drain Breakdown
Voltage (V
bgd
)
Noise Figure (NF)
Associated Gain (G
A
)
Output Power at 1 dB
Compression (P
1 dB
)
Gain at 1 dB Compression (G
1 dB
)
Power Added Efficiency (ηadd)
Test Conditions
V
DS
= 2 V, V
GS
= 0 V
V
DS
= 5 V, I
DS
= 1 mA
I
GD
= -400
µA
Min.
90.0
60.0
1.0
8.0
Typ.
140.0
80.0
3.0
12.0
0.6
13.8
20.0
V
DS
= 5 V, I
DS
= 70 mA, F = 18 GHz
9.0
25.0
5.0
Max.
190.0
Unit
mA
mS
-V
-V
dB
dB
dBm
dB
%
V
DS
= 2 V, I
DS
= 25 mA, F = 4 GHz
Alpha Industries, Inc.
[781] 935-5150
•
Fax
[617] 824-4579
•
Email
sales@alphaind.com
•
www.alphaind.com
Specifications subject to change without notice. 6/99A
1
Low Noise/Medium Power GaAs MESFET Chips
AFM04P3-212, AFM04P3-213
Typical Performance Data
150
V
GS
= 0 V
120
-0.5 V
Typical Noise Parameters
(V
DS
= 2 V, I
DS
= 25 mA)
Freq.
(GHz)
2
3
4
5
6
7
8
4
5
9
10
11
12
NF
MIN
(dB)
0.32
0.43
0.54
0.62
0.71
0.81
0.90
1.00
1.09
1.19
1.28
Γ
opt
Mag.
0.840
0.816
0.760
0.707
0.658
0.613
0.573
0.538
0.509
0.488
0.473
Ang.
22.0
39.9
55.1
71.0
87.6
104.8
122.5
140.5
158.8
177.3
-164.2
R
N
(Normalized)
0.32
0.30
0.28
0.25
0.20
0.16
0.11
0.08
0.06
0.05
0.06
G
A
(dB)
15.81
14.75
13.85
13.04
12.31
11.66
11.09
10.58
10.13
9.74
9.39
l
DS
(mA)
90
60
30
0
0
1
2
3
-1.0 V
-1.5 V
-2.0 V
-2.5 V
V
DS
(V)
I-V
Typical S-Parameters (V
DS
= 5 V, I
DS
= 75 mA)
Freq.
(GHz)
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
S
11
Mag.
0.889
0.846
0.839
0.845
0.840
0.721
0.708
0.726
0.662
0.627
0.647
0.664
0.757
0.854
0.877
0.817
0.854
0.829
0.808
0.868
0.842
0.892
1.003
0.913
0.810
Ang.
-52.589
-73.729
-93.128
-114.624
-138.378
-161.239
176.151
155.765
141.259
127.290
104.509
91.536
76.937
59.140
41.254
22.517
8.149
0.211
-6.381
-25.384
-44.086
-65.418
-85.660
-102.209
-125.908
Mag.
5.318
4.630
4.202
4.052
3.858
3.642
3.365
3.020
2.841
2.606
2.340
2.295
2.271
2.151
2.030
1.775
1.516
1.387
1.295
1.311
1.290
1.195
1.138
1.071
0.925
S
21
Ang.
130.730
107.339
94.408
72.773
53.962
36.964
21.074
8.127
-7.015
-22.373
-40.840
-54.578
-73.712
-91.255
-108.970
-124.675
-138.209
-150.773
-163.174
177.989
158.446
137.339
120.757
101.362
76.234
Mag.
0.025
0.032
0.035
0.039
0.043
0.046
0.051
0.052
0.061
0.067
0.078
0.098
0.125
0.138
0.156
0.153
0.148
0.159
0.158
0.177
0.190
0.186
0.182
0.183
0.152
S
12
Ang.
60.396
43.999
47.172
33.811
26.985
24.957
26.565
25.272
22.692
17.602
7.397
3.156
-14.059
-29.083
-44.222
-58.620
-66.477
-79.718
-90.627
-106.327
-124.276
-140.906
-154.898
-171.299
167.541
Mag.
0.603
0.547
0.442
0.442
0.433
0.459
0.444
0.367
0.379
0.364
0.313
0.353
0.464
0.480
0.477
0.510
0.532
0.667
0.750
0.642
0.654
0.721
0.755
0.714
0.630
S
22
Ang.
-38.675
-55.205
-58.792
-71.114
-87.725
-102.826
-115.757
-124.557
-139.923
-155.126
-168.618
160.641
138.233
121.701
102.016
74.410
52.097
43.603
36.702
24.887
-3.077
-31.972
-40.865
-57.178
-89.282
MAG/
MSG (dB)
23.226
21.552
20.739
20.126
19.554
18.966
18.196
15.515
13.767
12.218
11.224
12.045
12.603
11.912
11.136
10.633
10.094
9.418
9.137
8.692
8.319
8.090
7.956
7.671
7.853
2
Alpha Industries, Inc.
[781] 935-5150
•
Fax
[617] 824-4579
•
Email
sales@alphaind.com
•
www.alphaind.com
Specifications subject to change without notice. 6/99A
Low Noise/Medium Power GaAs MESFET Chips
AFM04P3-212, AFM04P3-213
212
0.036 (0.91 mm)
213
0.036 (0.91 mm)
2 PLACES
0.020 (0.51 mm)
2 PLACES
GATE
0.07 (1.78 mm)
0.027 (0.70 mm)
4 PLACES
SOURCE
DRAIN
0.070 (1.78 mm)
SOURCE
DRAIN
0.020 (0.51 mm)
2 PLACES
GATE
0.070 (1.78 mm)
4 PLACES
45˚
SOURCE
0.005 (0.13 mm)
4 PLACES
SOURCE
45˚
0.005 (0.13 mm)
4 PLACES
0.067
(1.70 mm)
MAX.
0.067
(1.70 mm)
Max.
Alpha Industries, Inc.
[781] 935-5150
•
Fax
[617] 824-4579
•
Email
sales@alphaind.com
•
www.alphaind.com
Specifications subject to change without notice. 6/99A
3
实时操作系统RTOS
