AMIS-30600 LIN Transceiver
Data Sheet
1.0 Key Features
LIN-Bus Transceiver
•
LIN compliant to specification rev. 1.3 and rev. 2.0
•
I
2
T high voltage technology
•
Bus voltage ± 40V
•
Transmission rate up to 20 kBaud
•
SOIC-150-8 Package
Protection
•
Thermal shutdown
•
Indefinite short circuit protection to supply and ground
•
Load dump protection (45V)
Power Saving
•
Operating voltage = 4.75 to 5.25V
•
Power down supply current < 50µA
EMS Compatibility
•
Integrated filter and hysteresis for receiver
EMI Compatibility
•
Integrated slope control for transmitter
•
Slope control dependant from Vbat to enable maximum capacitive-load
2.0 General Description
The single-wire transceiver AMIS-30600 is a monolithic integrated circuit in a SOIC-8 package. It works as an interface between
the protocol controller and the physical bus.
The AMIS-30600 is especially suitable to drive the bus line in LIN systems in automotive and industrial applications. Further it can
be used in standard ISO9141 systems.
In order to reduce the current consumption the AMIS-30600 offers a stand-by mode. A wake-up caused by a message on the bus
pulls the INH-output high until the device is switched to normal operation mode.
The transceiver is implemented in I
2
T100 technology enabling both high-voltage analog circuitry and digital functionality to co-exist
on the same chip.
The AMIS-30600 provides an ultra-safe solution to today’s automotive in-vehicle networking (IVN) requirements by providing
unlimited short circuit protection in the event of a fault condition.
3.0 Ordering Information
Table 1: Ordering Code
Marketing Name
AMIS30600AGA
Package
SOIC 150 8 150 4
Temp. Range
-40°C…125°C
AMI Semiconductor
– Rev. 2.0, Apr. 2005
www.amis.com
1
AMIS-30600 LIN Transceiver
Data Sheet
4.0 Block Diagram
V
CC
3
Thermal
shutdown
V
BB
7
8
INH
EN
2
10 kΩ
1
State
&
Wake-up
Control
30 kΩ
RxD
COMP
6
Filter
V
CC
LIN
AMIS-30600
Slope
Control
5
40 kΩ
TxD
4
PC20050113.3
GND
Figure 1: Block Diagram
5.0 Typical Application
5.1 Application Schematic
Master Node
VBAT
10
µF
V
BB
INH
7
8
Slave Node
VBAT
IN
10
µF
IN
5V-reg
OUT
100 nF
5V-reg
OUT
100 nF
V
CC
3
1
V
CC
RxD
TxD
EN
2
V
BB
INH
7
8
3
V
CC
1
V
CC
RxD
TxD
EN
2
1 kΩ
LIN
1 nF
6
AMIS-
30600
5
4
2
LIN
controller
LIN
6
AMIS-
30600
5
4
2
LIN
controller
GND
GND
GND
GND
GND
GND
KL30
LIN-BUS
KL31
PC20050113.5
Figure 2: Application Diagram
AMI Semiconductor
– Rev. 2.0, Apr. 2005
www.amis.com
2
AMIS-30600 LIN Transceiver
5.2 Pin Description
5.2.1 Pin Out (top view)
Data Sheet
RxD
EN
V
CC
TxD
1
8
INH
V
BB
LIN
GND
AMIS-
30600
2
3
4
7
6
5
PC20041204.3
Figure 3: Pin Configuration
5.2.2 Pin Description
Table 2: Pinout
Pin Name Description
1
2
3
4
5
6
7
8
RxD
EN
VCC
TxD
GND
LIN
VBB
INH
Receive data output; low in dominant state
Enable input; transceiver in normal operation mode when high
5V supply input
Transmit data input; low in dominant state; internal 40 KΩ pull-up
Ground
LIN bus output/input; low in dominant state; internal 30 KΩ pull-up
Battery supply input
Inhibit output; to control a voltage regulator; becomes high when wake-up via LIN bus occurs
5.3 Application Information
Start Up
Power Up
Normal Mode
EN
High
Power-up
INH
High
Vcc
On
EN
High
Stand-By Mode
EN
Low
EN
(Vcc
High
On)
EN
Low
INH
High
Vcc
On
Sleep Mode
EN
Low
Wake-up
t > t
wake
INH
Floating
Vcc
Off
PC20050113.1
Figure 4: State Diagram
AMI Semiconductor
– Rev. 2.0, Apr. 2005
www.amis.com
3
AMIS-30600 LIN Transceiver
Data Sheet
For fail safe reasons the AMIS-30600 already has an internal pull up resistor of 30kΩ implemented. To achieve the required
timings for the dominant to recessive transition of the bus signal an additional external termination resistor of 1kΩ is required. It is
recommended to place this resistor in the master node. To avoid reverse currents from the bus line into the battery supply line in
case of an unpowered node, it is recommended to place a diode in series to the external pull up. For small systems (low bus
capacitance) the EMC performance of the system is supported by an additional capacitor of at least 1nF in the master node (see
Figure 2, Typical Application Diagram).
The AMIS-30600 has a slope which depends of the supply Vbat. This implementation guarantees biggest slope-time under all load
conditions. The rising slope has to be slower then the external RC-time-constant, otherwise the slope will be terminated by the RC-
time-constant and no longer by the internal slope-control. This would effect the symmetry of the bus-signal and would limit the
maximum allowed bus-speed.
A capacitor of 10µF at the supply voltage input VB buffers the input voltage. In combination with the required reverse polarity diode
this prevents the device from detecting power down conditions in case of negative transients on the supply line.
In order to reduce the current consumption, the AMIS-30600 offers a sleep operation mode. This mode is selected by switching the
enable input EN low (see Figure 4, State Diagram).
In the sleep mode a voltage regulator can be controlled via the INH output in order to minimize the current consumption of the
whole application. A wake-up caused by a message on the communication bus automatically enables the voltage regulator by
switching the INH output high. In case the voltage regulator control input is not connected to INH output or the micro-controller is
active respectively, the AMIS-30600 can be set in normal operation mode without a wake-up via the communication bus.
6.0 Electrical Characteristics
6.1 Absolute Maximum Ratings
Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit.
Table 4: Absolute Maximum Ratings
Symbol
Parameter
V
CC
V
BB
V
LIN
V
INH
V
TxD
V
RxD
V
EN
V
esd(LIN)
V
esd
V
tran(LIN)
V
tran(VBB)
T
amb
Notes:
1.
2.
3.
4.
Conditions
Min.
Max.
Unit
Supply voltage
Battery supply voltage
DC voltage at pin LIN
DC voltage at pin INH
DC voltage at pin TxD
DC voltage at pin RxD
DC voltage at pin EN
Electrostatic discharge voltage at LIN pin
Electrostatic discharge voltage at all other pins
Transient voltage at pin LIN
Transient voltage at pin VBB
Ambient temperature
0 < V
CC
< 5.50V; note 1
0 < V
CC
< 5.50V
0 < V
CC
< 5.50V
0 < V
CC
< 5.50V
0 < V
CC
< 5.50V
Note 2
Note 2
Note 3
Note 4
-0.3
-0.3
-40
-0.3
-0.3
-0.3
-0.3
-4
-4
-150
-150
-40
+7
+40
+40
V
BB
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
+4
+4
+150
+150
+150
V
V
V
V
V
V
V
kV
kV
V
V
°C
80V version available, contact sales for details.
Standardized human body model system ESD pulses in accordance to IEC 1000.4.2.
Applied transient waveforms in accordance with “ISO 7637 parts 1 & 3” capacitive coupled test pulses 1 (-100V),
2 (+100V), 3a (-150V), and 3b (+150V). See Figure 8.
Applied transient waveforms in accordance with “ISO 7637 parts 1 & 3” direct coupled test pulses 1 (-100V), 2 (+75V),
3a (-150V), 3b (+150V), and 5 (+80V). See Figure 8.
AMI Semiconductor
– Rev. 2.0, Apr. 2005
www.amis.com
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AMIS-30600 LIN Transceiver
6.2 Operating Range
Table 5: Operating Range
Symbol
Parameter
V
CC
V
BB
T
junc
T
jsd
R
thj-a
Supply voltage
Battery supply voltage
Maximum junction temperature
Thermal shutdown temperature
Thermal resistance junction to ambient
Data Sheet
Min.
Typ.
Max.
Unit
4.75
7.3
-40
+150
+170
185
+5.25
+18
+150
+190
V
V
°C
°C
°C/W
6.3 DC Electrical Characteristics
V
CC
= 4.75 to 5.25V; V
BB
= 7.3 to 18V; V
EN
> V
EN,on
; T
amb
= -40 to +125°C; R
L
= 500Ω unless specified otherwise. All voltages with
respect to ground; positive current flowing into pin; unless otherwise specified.
Table 6: DC Characteristics
Symbol
Parameter
Supply (pin VCC and pin VBB)
Conditions
Min.
Typ.
Max.
Unit
µ
A
µ
A
mA
µ
A
µ
A
µ
A
I
CC
I
BB
I
BB
I
CC
V
IH
V
IL
R
TxD,pu
V
OH
V
OL
V
EN,on
V
EN,off
R
EN,pd
V
INH,d
I
INH,lk
V
bus,rec
V
bus,dom
I
bus,sc
I
bus,lk
R
bus
V
bus,rd
V
bus,dr
Vq
V
WAKE
5V supply current
Battery supply current
Battery supply current
5V supply current
High-level input voltage
Low-level input voltage
Pull-up resistor to Vcc
High-level output voltage
Low-level output voltage
High-level input voltage
Low-level input voltage
Pull-down resistor to GND
High-level voltage drop: V
INH,d
= V
BB
- V
INH
Leakage current
Recessive bus voltage at pin LIN
Dominant output voltage at pin LIN
Bus short circuit current
Bus leakage current
Bus pull-up resistance
Receiver threshold: recessive to dominant
Receiver threshold: dominant to recessive
Receiver hysteresis
Wake-up threshold voltage
Dominant; V
TxD
=0V
Recessive; V
TxD
=V
CC
Dominant; V
TxD
=0V
Recessive; V
TxD
=V
CC
Sleep mode; V
INH
= 0V
Sleep mode; V
INH
= 0V
Output recessive
Output dominant
0.7 x V
CC
0
24
I
RXD
= -10mA
I
RXD
= 5mA
Normal mode
Low power mode
0.8 x V
CC
0
0.7 x V
CC
0
6
I
INH
= - 0.15mA
Sleep mode; V
INH
= 0V
V
TxD
=V
CC
V
TxD
= 0V
V
TxD
= 0V; I
bus
= 40mA
V
bus,short
= 18V
V
CC
=V
BB
=0V; V
bus
=8V
V
CC
=V
BB
=0V; V
bus
=20V
V
TxD
= 0V
-5.0
0.9 x V
BB
0
40
-400
20
0.4 x V
BB
0.4 x V
BB
V
bus,hys
=V
bus,rec
-V
bus,dom
0.05 x V
BB
0.4 x V
BB
400
250
1
100
35
0.25
-
-
700
500
1.5
200
55
1
V
CC
0.3 x V
CC
60
V
CC
0.2 x V
CC
Transmitter Data Input (pin TxD)
V
V
k
Ω
V
V
V
V
k
Ω
V
µ
A
Receiver Data Output (pin RxD)
Enable Input (pin EN)
-
-
10
0.5
-
-
-
85
-200
5
30
0.48 x V
BB
0.52 x V
BB
0.04 x V
BB
V
CC
0.3 x V
CC
15
1.0
5.0
V
BB
0.15 x V
BB
1.4
130
20
47
0.6 x V
BB
0.6 x V
BB
0.175 x V
BB
0.6 x V
BB
Inhibit Output (pin INH)
Bus Line (pin LIN)
V
V
V
mA
µ
A
k
Ω
V
V
V
V
AMI Semiconductor
– Rev. 2.0, Apr. 2005
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