AO4805
30V
Dual P-Channel MOSFET
General Description
The AO4805 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
DS(ON)
. This device is ideal for load switch
and battery protection applications.
Product Summary
V
DS
I
D
(at V
GS
=-20V)
R
DS(ON)
(at V
GS
=-20V)
R
DS(ON)
(at V
GS
=-10V)
-30V
-9A
< 15mΩ
< 18mΩ
100% UIS Tested
100% R
g
Tested
SOIC-8
Top View
Bottom View
Top View
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
D1
D2
G1
S1
G2
S2
Pin1
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
-30
±25
-9
-7
-50
33
54
2
1.3
-55 to 150
Units
V
V
A
A
mJ
W
°
C
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
AS
, I
AR
E
AS
, E
AR
P
D
T
J
, T
STG
Avalanche energy L=0.1mH
T
A
=25°
C
Power Dissipation
B
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
32
Max
62.5
90
40
Units
°
C/W
°
C/W
°
C/W
Rev 7: December 2010
www.aosmd.com
Page 1 of 5
AO4805
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-30V, V
GS
=0V
T
J
=55°
C
V
DS
=0V, V
GS
=±25V
V
DS
=V
GS
I
D
=-250µA
V
GS
=-10V, V
DS
=-5V
V
GS
=-20V, I
D
=-9A
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=-10V, I
D
=-8A
T
J
=125°
C
V
GS
=-4.5V, I
D
=-5A
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
V
DS
=-5V, I
D
=-9A
I
S
=-1A,V
GS
=0V
-1.7
-50
10
12
13
29
27
-0.7
-1
-2.5
2060
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
1.2
370
295
2.4
30
V
GS
=-10V, V
DS
=-15V, I
D
=-9A
4.6
10
11
V
GS
=-10V, V
DS
=-15V, R
L
=1.67Ω,
R
GEN
=3Ω
I
F
=-9A, dI/dt=100A/µs
2
Min
-30
Typ
Max
Units
V
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
-1
-5
±100
-2.3
-2.8
15
18
20
µA
nA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
2600
3.6
39
Ω
nC
nC
nC
ns
ns
ns
ns
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-9A, dI/dt=100A/µs
9.4
24
12
30
22
40
ns
nC
A. The value of R
θJA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25° The
C.
value in any given application depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150° using
≤
10s junction-to-ambient thermal resistance.
C,
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150° Ratings are based on low frequency and duty cycles to keep
C.
initialT
J
=25°
C.
D. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150° The SOA curve provides a single pulse ratin g.
C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 7: December 2010
www.aosmd.com
Page 2 of 5
AO4805
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
-10V
-6V
60
-4.5V
60
-5V
80
V
DS
=-5V
-I
D
(A)
40
-4V
20
V
GS
=-3.5V
0
0
1
2
3
4
5
-I
D
(A)
40
125°
C
20
25°
C
0
1
3
5
V
GS
(Volts)
4
Figure 2: Transfer Characteristics (Note E)
2
6
-V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
20
Normalized On-Resistance
1.6
R
DS(ON)
(m
Ω
)
15
1.4
V
GS
=-10V
V
GS
=-10V
I
D
=-8A
1.2
V
GS
=-20V
I
D
=-9A
10
V
GS
=-20V
1
17
5
2
10
5
0
9
12
15
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
3
6
0.8
0
25
50
75
100
125
150
175
Temperature (°
C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
35
I
D
=-9A
30
25
R
DS(ON)
(m
Ω
)
I
S
(A)
125°
C
20
25°
C
15
10
5
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E+01
1.0E+00
40
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
125°
C
25°
C
Rev 7: December 2010
www.aosmd.com
Page 3 of 5
AO4805
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=-15V
I
D
=-9A
8
Capacitance (pF)
-V
GS
(Volts)
3000
2500
C
iss
2000
1500
1000
C
oss
2
500
0
0
15
20
25
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
5
10
30
0
C
rss
15
20
25
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
6
4
0
1000.0
10000
T
A
=25°
C
100.0
1000
I
D
(Amps)
100µs
1ms
10ms
T
J(Max)
=150°
C
T
A
=25°
C
10s
DC
10
100
Power (W)
10.0
R
DS(ON)
limited
10µs
100
1.0
0.1
10
0.0
0.01
0.1
1
V
DS
(Volts)
1
0.00001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-
Ambient (Note F)
0.001
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
1
R
θJA
=90°
C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
P
D
T
on
10
T
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 7: December 2010
www.aosmd.com
Page 4 of 5
AO4805
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
VDC
VDC
DUT
Vgs
Ig
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vgs
Vgs
Rg
DUT
VDC
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
Vds
Id
Vgs
Rg
DUT
Vgs
Vgs
Vgs
VDC
Diode Recovery Test Circuit & Waveforms
Vds +
DUT
Vgs
t
rr
Vds -
Isd
Vgs
Ig
L
VDC
+
Vdd
-
-Vds
Rev 7: December 2010
www.aosmd.com
+
-
+
Charge
t
on
t
d(on)
t
r
t
d(off)
t
off
t
f
+
-
-
+
-
Vds
Qgs
Qgd
Vdd
90%
10%
E
AR
= 1/2 LI
AR
2
Vds
BV
DSS
Vdd
Id
I
AR
Q
rr
= - Idt
-Isd
-I
F
dI/dt
-I
RM
Vdd
Page 5 of 5
