AOD476
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD476 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
product
AOD476 is Pb-free (meets ROHS & Sony
259 specifications). AOD476L is a Green Product
ordering option. AOD476 and AOD476L are
electrically identical.
TO-252
D-PAK
Features
1.4
V
DS
(V) = 20V
I
D
= 25A (V
GS
= 10V)
R
DS(ON)
<21 mΩ (V
GS
= 10V)
R
DS(ON)
<28 mΩ (V
GS
= 4.5V)
R
DS(ON)
<79 mΩ (V
GS
= 2.5V)
193
UIS Tested
18
Rg,Ciss,Coss,Crss Tested
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
20
±16
25
23
75
13
25
33.3
16.7
2.5
1.7
-55 to 175
Units
V
V
A
A
mJ
W
W
°C
T
C
=25°C
G
T
C
=100°C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
Repetitive avalanche energy L=0.3mH
T
C
=25°C
Power Dissipation
Power Dissipation
B
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
Maximum Junction-to-Case
B
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
17
40
3.6
Max
25
50
4.5
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOD476
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=250uA, V
GS
=0V
V
DS
=16V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±16V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125°C
V
GS
=4.5V, I
D
=10A
V
GS
=2.5V, I
D
=4A
g
FS
V
SD
I
S
Forward Transconductance
V
DS
=5V, I
D
=20A
Diode Forward Voltage
I
S
=1A, V
GS
=0V
G
Maximum Body-Diode Continuous Current
0.6
75
14
21
20
57
19
0.77
1
30
900
V
GS
=0V, V
DS
=10V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
162
105
1.8
15
V
GS
=10V, V
DS
=10V, I
D
=20A
7.2
1.8
2.8
4.5
V
GS
=10V, V
DS
=10V, R
L
=0.5Ω,
R
GEN
=3Ω
I
F
=20A, dI/dt=100A/µs
9.2
18.7
3.3
18
9.5
2.7
18
9
28
79
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
21
mΩ
1.26
Min
20
1
5
100
2
Typ
Max
Units
V
uA
nA
V
A
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with
of
T
A
=25°C. The Power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature
0
150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs
pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
Rev0: Sept 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD476
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10V
30
8V
6V
25
20
I
D
(A)
4.5V
15
10
5
V
GS
=3V
0
V
DS
=5V
25°C
-40°C
125°C
80
60
40
20
0
0
I
D
(A)
1.4
494
692
593
830
3.5V
2
3
4
V
DS
(Volts)
Fig 1: On-Region Characteristics
1
5
1
3
4
V
GS
(Volts)
Figure 2: Transfer Characteristics
2
5
80
70
60
R
DS(ON)
(m
Ω
)
50
40
30
20
10
0
0
5
10
15
20
25
30
V
GS
=10V
V
GS
=4.5V
V
GS
=2.5V
1.60
Normalized On-Resistance
193
18
V
GS
=10V, 20A
1.40
V
GS
=4.5V, 10A
1.20
1.00
V
GS
=2.5V, 4A
0.80
0.60
-50
-25
0
25
50
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
59
75
142
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
35
I
D
=20A
30
100
10
1
125°C
-40°C
R
DS(ON)
(m
Ω
)
I
S
(A)
25
125°C
0.1
0.01
20
25°C
15
0.001
0.0001
25°C
10
3
4
5
6
7
8
9
10
0.00001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOD476
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V
GS
(Volts)
6
4
2
200
0
0
3
6
9
12
15
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
100
0
0
C
rss
10
15
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
20
V
DS
=12.5V
I
D
=20A
1400
1200
C
iss
Capacitance (pF)
1000
800
600
400
C
oss
1.4
494
692
593
830
193
18
10µs
100µs
Power (W)
200
160
120
80
40
T
J(Max)
=175°C
T
C
=25°C
10
I
D
(Amps)
R
DS(ON)
limited
1
DC
1ms
T
J(Max)
=175°C, T
C
=25°C
0.1
0.1
1
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
100
0
0.0001
0.001
59
0.1
Pulse Width (s)
142
0.01
1
10
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=4.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOD476
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
35
I
D
(A), Peak Avalanche Current
30
25
T
A
=25°C
20
15
10
0.000001
0.00001
0.0001
0.001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
t
A
=
L
⋅
I
D
Power Dissipation (W)
40
35
30
25
20
15
10
5
0
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 13: Power De-rating (Note B)
BV
−
V
DD
1.4
494
692
593
830
30
25
Current rating I
D
(A)
Power (W)
20
15
10
50
40
30
20
10
193
18
T
A
=25°C
5
0
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 14: Current De-rating (Note B)
0
0.01
0.1
1
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
59
10
142
100
1000
10
Z
θ
JA
Normalized Transient
Thermal Resistance
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=50°C/W
0.01
0.1
1
P
D
T
on
10
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
T
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
电源技术
