AON6232
40V N-Channel MOSFET
General Description
The AON6232 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are
minimized due to an extremely low combination of
R
DS(ON)
and Crss.In addition,switching behavior is well
controlled with a "Schottky style" soft recovery body
diode.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
40V
85A
< 2.5mΩ
< 3.6mΩ
100% UIS Tested
100% R
g
Tested
DFN5X6
Top View
Bottom View
1
2
3
4
Top View
D
8
7
6
5
G
S
PIN1
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
B
C
C
Maximum
40
±20
85
67
260
22
17
60
180
83
33
2.3
1.4
-55 to 150
Units
V
V
A
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
I
AS
, I
AR
E
AS
, E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
A
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
14
40
1.1
Max
17
55
1.5
Units
°
C/W
°
C/W
°
C/W
Rev 0: August 2011
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Page 1 of 6
AON6232
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=40V, V
GS
=0V
C
T
J
=55°
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS,
I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=20A
Forward Transconductance
V
DS
=5V, I
D
=20A
Diode Forward Voltage
I
S
=1A,V
GS
=0V
Maximum Body-Diode Continuous Current
G
2530
V
GS
=0V, V
DS
=20V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
630
15
0.4
33
V
GS
=10V, V
DS
=20V, I
D
=20A
12
T
J
=125°
C
1.3
260
2.05
3.2
2.8
100
0.68
1
85
3165
905
52.5
0.85
42
18.2
9.6
2.8
8.7
V
GS
=10V, V
DS
=20V, R
L
=1Ω,
R
GEN
=3Ω
I
F
=20A, dI/dt=500A/µs
15
41
4.5
33.5
6.2
22.5
59
30
77
3800
1180
90
1.3
51
24
2.5
3.9
3.6
1.8
Min
40
1
5
100
2.3
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=500A/µs
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25 C. The
Power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150 C. The value in any given application depends
on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150 C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150 C. Ratings are based on low frequency and duty cycles to keep
initial T
J
=25 C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=150 C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25 C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: August 2011
www.aosmd.com
Page 2 of 6
AON6232
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60
I
D
(A)
60
40
20
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
6
Normalized On-Resistance
I
D
(A)
10V
4.5V
6V
100
3.5V
80
V
DS
=5V
40
V
GS
=3V
20
125
C
25
C
0
0
1
2
3
4
5
6
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
1.8
1.6
1.4
1.2
1
0.8
0
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
5
10
0
25
50
75
100
125
150
175
V
GS
=10V
I
D
=20A
R
DS(ON)
(mΩ)
Ω
4
V
GS
=4.5V
2
V
GS
=10V
17
5
2
10
V
GS
=4.5V
I
D
=20A
0
0
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
8
I
D
=20A
1.0E+02
1.0E+01
6
R
DS(ON)
(mΩ)
Ω
I
S
(A)
125
4
C
1.0E+00
1.0E-01
1.0E-02
1.0E-03
25
C
1.0E-04
1.0E-05
2
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
125
C
40
25
C
2
0
Rev 0: August 2011
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Page 3 of 6
AON6232
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=20V
I
D
=20A
8
3000
Capacitance (pF)
V
GS
(Volts)
6
2500
2000
1500
1000
2
500
0
0
20
25
30
35
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
5
10
15
40
45
0
0
20
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
10
40
C
rss
C
oss
C
iss
4000
3500
4
1000.0
100.0
I
D
(Amps)
10.0
1.0
0.1
0.0
0.01
0.1
1
V
DS
(Volts)
10
100
200
R
DS(ON)
10µs
160
10µs
Power (W)
T
J(Max)
=150
T
C
=25 C
C
DC
T
J(Max)
=150
T
C
=25 C
C
100µs
1ms
10ms
120
80
40
0
0.0001
17
5
2
10
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
0.001
0.01
0.1
1
10
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
R
θJC
=1.5
C/W
40
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: August 2011
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Page 4 of 6
AON6232
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
I
AR
(A) Peak Avalanche Current
T
A
=25
100
T
A
=150
C
100
T
A
=100
C
C
Power Dissipation (W)
1000
80
60
10
T
A
=125
C
40
20
1
1
10
100
Time in avalanche, t
A
(µs)
µ
Figure 12: Single Pulse Avalanche capability
(Note C)
0
0
75
100
125
T
CASE
(°
C)
Figure 13: Power De-rating (Note F)
25
50
150
100
10000
T
A
=25
1000
C
80
Current rating I
D
(A)
Power (W)
60
100
40
17
5
2
10
10
20
0
0
75
100
125
T
CASE
(°
C)
Figure 14: Current De-rating (Note F)
25
50
150
1
0.00001
0.001
0.1
10
0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
R
θJA
=55
C/W
40
0.1
P
D
0.01
Single Pulse
T
on
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: August 2011
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Page 5 of 6
