AONS21357
30V P-Channel MOSFET
General Description
• Latest advanced trench technology
• Low R
DS(ON)
• High Current Capability
• RoHS and Halogen-Free Compliant
Product Summary
V
DS
I
D
(at V
GS
=-10V)
R
DS(ON)
(at V
GS
=-10V)
R
DS(ON)
(at V
GS
=-4.5V)
-30V
-36A
< 7.8mΩ
< 12.3mΩ
Applications
• Notebook AC-in load switch
• Battery protection charge/discharge
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
Bottom View
D
PIN1
PIN1
G
S
Orderable Part Number
AONS21357
Package Type
DFN 5x6
Form
Tape & Reel
Minimum Order Quantity
3000
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
Avalanche energy
Power Dissipation
Power Dissipation
B
C
C
Symbol
V
DS
V
GS
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
L=0.1mH
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
C
Maximum
-30
±
25
-36
-36
-144
-21
-17
39
76
48
19
5.0
3.2
-55 to 150
Units
V
V
A
I
D
I
DM
I
DSM
I
AS
E
AS
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Symbol
A
AD
t ≤ 10s
Steady-State
Steady-State
R
qJA
R
qJC
Typ
20
45
2.1
Max
25
55
2.6
Units
°
C/W
°
C/W
°
C/W
Rev.2.0: February 2020
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Page 1 of 6
AONS21357
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=-250mA, V
GS
=0V
V
DS
=-30V, V
GS
=0V
T
J
=55°
C
V
DS
=0V, V
GS
=±
25V
V
DS
=V
GS,
I
D
=-250mA
V
GS
=-10V, I
D
=-20A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=-4.5V, I
D
=-20A
Forward Transconductance
Diode Forward Voltage
V
DS
=-5V, I
D
=-20A
I
S
=-1A, V
GS
=0V
G
Min
-30
Typ
Max
Units
V
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
-1
-5
±
100
-1.3
T
J
=125°
C
-1.7
6.3
8.6
9.8
50
-0.7
-1
-36
2830
-2.3
7.8
10.7
12.3
μA
nA
V
mΩ
mΩ
S
V
A
pF
pF
pF
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
f=1MHz
V
GS
=0V, V
DS
=-15V, f=1MHz
430
365
14
50
28
70
35
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
SWITCHING PARAMETERS
Q
g
(10V)
Total Gate Charge
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
I
F
=-20A, di/dt=500A/ms
Body Diode Reverse Recovery Charge I
F
=-20A, di/dt=500A/ms
V
GS
=-10V, V
DS
=-15V, R
L
=0.75W,
R
GEN
=3W
V
GS
=-10V, V
DS
=-15V, I
D
=-20A
25
9
12
12.5
18
125
66
32
62
A. The value of R
qJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The Power
dissipation P
DSM
is based on R
qJA
t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T
J(MAX)
=150°C.
D. The R
qJA
is the sum of the thermal impedance from junction to case R
qJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: February 2020
www.aosmd.com
Page 2 of 6
AONS21357
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
-10V
100
-4.5V
80
-4V
V
DS
=-5V
80
60
60
-I
D
(A)
125°C
-I
D
(A)
40
-3.5V
40
25°C
20
V
GS
=-3V
0
0
1
2
3
4
5
20
0
1
2
3
4
5
-V
DS
(Volts)
Figure 1: On-Region Characteristics (Note E)
-V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
1.6
Normalized On-Resistance
20
15
1.4
V
GS
=-10V
I
D
=-20A
R
DS(ON)
(mW)
V
GS
=-4.5V
10
1.2
V
GS
=-4.5V
I
D
=-20A
1
5
V
GS
=-10V
0
0.8
0
5
10
15
20
25
30
0
25
50
75
100
125
150
175
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+01
I
D
=-20A
1.0E+00
1.0E-01
125°C
-I
S
(A)
125°C
25
20
R
DS(ON)
(mW)
15
1.0E-02
10
1.0E-03
5
25°C
1.0E-04
1.0E-05
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°C
0
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
(Note E)
Rev.2.0: February 2020
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Page 3 of 6
AONS21357
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=-15V
I
D
=-20A
4000
3500
3000
Capacitance (pF)
C
iss
8
2500
2000
-V
GS
(Volts)
6
4
1500
1000
500
C
oss
C
rss
0
2
0
0
10
20
30
40
50
60
0
5
10
15
20
25
30
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
500
1000.0
100.0
10ms
R
DS(ON)
limited
Power (W)
400
300
200
100
0
0.0001
T
J(Max)
=150°C
T
C
=25°C
100ms
1ms
-I
D
(Amps)
10.0
1.0
DC
T
J(Max)
=150°C
T
C
=25°C
10ms
0.1
0.0
0.01
1
10
-V
DS
(Volts)
-V
GS
> or equal to -4.5V
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
0.1
100
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
Z
qJC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
qJC
.R
qJC
R
qJC
=2.6°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Single Pulse
P
DM
T
on
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.2.0: February 2020
www.aosmd.com
Page 4 of 6
AONS21357
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
Power Dissipation (W)
45
45
Current rating -I
D
(A)
0
25
50
75
100
125
150
30
30
15
15
0
T
CASE
(°C)
Figure 12: Power De-rating (Note F)
0
0
25
50
75
100
125
150
T
CASE
(°C)
Figure 13: Current De-rating (Note F)
10000
T
A
=25°C
1000
Power (W)
100
10
1
1E-05
0.001
0.1
10
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
Z
qJA
Normalized Transient
Thermal Resistance
10
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
qJA
.R
qJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
R
qJA
=55°C/W
0.1
P
DM
0.01
Single Pulse
T
on
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.2.0: February 2020
www.aosmd.com
Page 5 of 6
