AOT12N60/AOTF12N60
600V,12A N-Channel MOSFET
General Description
The AOT12N60 & AOTF12N60 have been fabricated
using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low R
DS(on)
, C
iss
and C
rss
along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
For Halogen Free add "L" suffix to part number:
AOT12N60L & AOTF12N60L
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
700V@150℃
12A
< 0.55Ω
100% UIS Tested
100% R
g
Tested
TO-220
Top View
TO-220F
D
G
D
S
G
D
S
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
AOT12N60
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
G
C
AOTF12N60
600
±30
12*
9.7*
48
5.5
450
900
50
5
Units
V
V
A
A
mJ
mJ
V/ns
V
GS
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
Symbol
R
θJA
R
θCS
AOT12N60
65
0.5
0.45
278
2.2
12
9.7
Repetitive avalanche energy
Single plused avalanche energy
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
T
C
=25°C
B
Power Dissipation
Derate above 25
o
C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A,D
50
0.4
-55 to 150
300
AOTF12N60
65
--
2.5
W
W/
o
C
°C
°C
Units
°C/W
°C/W
°C/W
Maximum Case-to-sink
A
Maximum Junction-to-Case
R
θJC
* Drain current limited by maximum junction temperature.
Rev.6.0: June 2013
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Page 1 of 6
AOT12N60/AOTF12N60
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
STATIC PARAMETERS
BV
DSS
BV
DSS
/∆TJ
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
V
SD
I
S
I
SM
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Pulsed Current
1400
V
GS
=0V, V
DS
=25V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
130
10
2.5
1751
164
13
3.3
40
V
GS
=10V, V
DS
=480V, I
D
=12A
9
17.9
39
V
GS
=10V, V
DS
=300V, I
D
=12A,
R
G
=25Ω
I
F
=12A,dI/dt=100A/µs,V
DS
=100V
70
122
74
311
5.2
I
D
=250µA, V
GS
=0V, T
J
=25°C
I
D
=250µA, V
GS
=0V, T
J
=150°C
I
D
=250µA, V
GS
=0V
V
DS
=600V, V
GS
=0V
V
DS
=480V, T
J
=125°C
V
DS
=0V, V
GS
=±30V
V
DS
=5V I
D
=250µA
V
GS
=10V, I
D
=6A
V
DS
=40V, I
D
=6A
I
S
=1A,V
GS
=0V
3
4
0.46
20
0.72
1
12
48
2100
200
16
5
50
11
22
50
85
150
90
373
6.2
600
700
0.65
1
10
±100
4.5
0.55
V
V/
o
C
µA
nΑ
V
Ω
S
V
A
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
µC
Parameter
Conditions
Min
Typ
Max
Units
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
C
iss
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=12A,dI/dt=100A/µs,V
DS
=100V
A. The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C, Ratings are based on low frequency and duty cycles to keep initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs
pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, I
AS
=5.5A, V
DD
=150V, R
G
=25Ω, Starting T
J
=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.6.0: June 2013
www.aosmd.com
Page 2 of 6
AOT12N60/AOTF12N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
10V
25
6.5V
20
I
D
(A)
6V
15
10
5
0
0
5
10
15
20
25
30
V
GS
=5.5V
0.1
2
4
6
8
10
V
DS
(Volts)
Fig 1: On-Region Characteristics
1.0
Normalized On-Resistance
3
2.5
2
1.5
1
0.5
0
0
5
10
15
20
25
-100
-50
0
50
100
150
200
I
D
(A)
125°C
1
25°C
10
100
V
DS
=40V
-55°C
V
GS
(Volts)
Figure 2: Transfer Characteristics
0.8
R
DS(ON)
(
Ω
)
V
GS
=10V
I
D
=6A
0.6
V
GS
=10V
0.4
0.2
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
1.0E+00
BV
DSS
(Normalized)
1.1
I
S
(A)
40
1.0E-01
125°C
1.0E-02
25°C
1.0E-03
1
0.9
1.0E-04
0.8
-100
-50
0
50
100
150
200
T
J
(°C)
Figure 5:Break Down vs. Junction Temperature
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev.6.0: June 2013
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Page 3 of 6
AOT12N60/AOTF12N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
V
DS
=480V
I
D
=12A
1000
Capacitance (pF)
V
GS
(Volts)
9
C
oss
100
10000
C
iss
12
6
10
3
C
rss
1
0
30
40
50
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
10
20
60
0.1
10
V
DS
(Volts)
Figure 8: Capacitance Characteristics
1
100
0
100
10µs
10
I
D
(Amps)
R
DS(ON)
limited
100µs
1ms
1
DC
0.1
T
J(Max)
=150°C
T
C
=25°C
10ms
100
10
I
D
(Amps)
R
DS(ON)
limited
10µs
100µs
1ms
10ms
0.1s
1s
1
0.1
T
J(Max)
=150°C
T
C
=25°C
DC
0.01
1
10
100
1000
0.01
1
10
V
DS
(Volts)
100
1000
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT12N60 (Note F)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF12N60 (Note F)
14
12
Current rating I
D
(A)
10
8
6
4
2
0
0
25
50
75
100
125
150
T
CASE
(°C)
Figure 11: Current De-rating (Note B)
Rev.6.0: June 2013
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Page 4 of 6
AOT12N60/AOTF12N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=0.45°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT12N60 (Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF12N60 (Note F)
Rev.6.0: June 2013
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Page 5 of 6
