AP09N70P-A-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
100% Avalanche Test
▼
Fast Switching Characteristic
▼
Simple Drive Requirement
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
650V
0.75Ω
9A
S
Description
AP09N70 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-220 package is widely preferred for all commercial-
industrial through hole applications. The low thermal resistance
and low package cost contribute to the worldwide popular
package.
G
D
S
TO-220
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Single Pulse Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
2
Rating
650
+30
9
5
40
156
40.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
mJ
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
0.8
62
Unit
℃/W
℃/W
1
201310025
Data & specifications subject to change without notice
AP09N70P-A-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
3
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
3
Test Conditions
V
GS
=0V, I
D
=1mA
V
GS
=10V, I
D
=4.5A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=4.5A
V
DS
=600V, V
GS
=0V
V
GS
=+30V, V
DS
=0V
I
D
=9A
V
DS
=480V
V
GS
=10V
V
DD
=300V
I
D
=9A
R
G
=10Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
f=1.0MHz
Min.
650
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
4.5
-
-
44
11
12
19
21
56
24
2660
170
10
Max. Units
-
0.75
4
-
100
+100
-
-
-
-
-
-
-
-
-
-
V
Ω
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
3
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
Notes:
1.Pulse width limited by Max. junction temperature.
o
2.Starting T
j
=25 C , V
DD
=50V , L=1mH , R
G
=25Ω , I
AS
=9A.
Parameter
Continuous Source Current ( Body Diode )
Test Conditions
V
D
=V
G
=0V , V
S
=1.5V
1
Min.
-
-
-
Typ.
-
-
-
Max. Units
9
40
1.5
A
A
V
Pulsed Source Current ( Body Diode )
Forward On Voltage
3
T
j
=25℃, I
S
=9A, V
GS
=0V
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP09N70P-A-HF
10
10
T
C
=25
o
C
8
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
6.0V
5.0V
T
C
=150 C
8
o
10V
6.0V
5.0V
4.5V
6
6
4
4
4.5V
2
4.0V
2
4.0V
V
G
= 3 .5 V
0
0
3
6
9
12
0
V
G
= 3 .5 V
0
5
10
15
20
25
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
3
I
D
=4.5A
V
G
=10V
1.1
Normalized BV
DSS
1
Normalized R
DS(ON)
2
1
0.9
0.8
-50
0
50
100
150
0
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
T
j
, Junction Temperature ( C )
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
100
5
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
4
10
I
S
(A)
T
j
= 150 C
o
o
T
j
= 25 C
V
GS(th)
(V)
3
1
2
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP09N70P-A-HF
f=1.0MHz
16
10000
V
GS
, Gate to Source Voltage (V)
I
D
=9A
12
C
iss
V
DS
=320V
V
DS
=400V
V
DS
=480V
8
C (pF)
C
oss
100
4
C
rss
0
0
20
40
60
1
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
0.2
10
100us
I
D
(A)
0.1
0.1
0.05
1ms
1
0.02
P
DM
t
0.01
T
C
=25 C
Single Pulse
0.1
1
10
100
o
10ms
100ms
DC
1000
10000
T
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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