AP22T03GH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Lower Gate Charge
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
30V
33mΩ
15.6A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
□
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
TO-252(H)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=70℃
I
DM
P
D
@T
C
=25℃
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Rating
30
+20
15.6
9.8
50
12.5
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
℃
℃
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value
10
62.5
Units
℃/W
℃/W
Data & specifications subject to change without notice
1
200912221
AP22T03GH-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=12A
V
GS
=4.5V, I
D
=8A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
o
Min.
30
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
8.5
-
-
4
1.3
2.3
6
23
13
3
280
75
50
Max. Units
-
33
60
3
-
25
+100
6.4
-
-
-
-
-
-
448
-
-
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=12A
V
DS
=24V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=8A
V
DS
=24V
V
GS
=4.5V
V
DS
=15V
I
D
=8A
R
G
=3.3Ω,V
GS
=10V
R
D
=1.88Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
Test Conditions
I
S
=12A, V
GS
=0V
I
S
=8A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
16
8
Max. Units
1.2
-
-
V
ns
nC
t
rr
Q
rr
Notes:
1.Pulse width limited by Max. junction temperature
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP22T03GH-HF
50
40
T
C
=25 C
40
o
10V
7.0V
I
D
, Drain Current (A)
6.0V
30
T
C
=150 C
o
10V
7.0V
6.0V
I
D
, Drain Current (A)
30
5.0V
5.0V
20
20
V
G
= 4.0 V
V
G
=4.0V
10
10
0
0
2
4
6
8
0
0
2
4
6
8
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
60
2.0
I
D
=8A
T
C
=25 C
Normalized R
DS(ON)
50
1.6
o
I
D
=12A
V
G
=10V
R
DS(ON)
(m
Ω
)
40
1.2
30
0.8
20
2
4
6
8
10
0.4
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
12
10
Normalized V
GS(th)
(V)
1.4
1.2
8
I
S
(A)
T
j
=150
o
C
6
T
j
=25
o
C
0.8
4
0.4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP22T03GH-HF
10
500
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
I
D
=8A
V
DS
=24V
8
400
6
C (pF)
300
C
iss
4
200
2
100
C
oss
C
rss
1
5
9
13
17
21
25
29
0
0
2
4
6
8
0
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Operation in this area
limited by R
DS(ON)
Normalized Thermal Response (R
thjc
)
Duty factor = 0.5
10
0.2
I
D
(A)
100us
0.1
0.1
0.05
0.02
P
DM
1
T
C
=25
o
C
Single Pulse
0
0.1
1
10
1ms
10ms
100ms
DC
t
0.01
T
Duty factor = t/T
Peak T
j
= PDM x R
thjc
+ T
c
Single Pulse
0.01
100
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
