AP40T10GP
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
100% Avalanche Test
▼
Single Drive Requirement
▼
Fast Switching Characteristic
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
105V
35mΩ
39A
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
applications and suited for low voltage applications.
G
D
TO-220(P)
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
105
±20
39
27
80
125
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
1.2
62
Units
℃/W
℃/W
Data and specifications subject to change without notice
201107071-1/4
AP40T10GP
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=1mA
V
GS
=10V, I
D
=15A
V
GS
=6V, I
D
=10A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=125
o
C)
Min.
105
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
14.5
-
-
-
24
5.4
9.6
9
64
19
75
270
85
Max. Units
-
35
38
4
-
10
100
±100
40
-
-
-
-
-
-
-
-
V
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
V
DS
=V
GS
, I
D
=250uA
V
DS
=15V, I
D
=15A
V
DS
=100V, V
GS
=0V
V
DS
=80V ,V
GS
=0V
V
GS
=±20V
I
D
=40A
V
DS
=50V
V
GS
=10V
V
DS
=50V
I
D
=40A
R
G
=2.5Ω,V
GS
=10V
R
D
=1.25Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1310 2100
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
Test Conditions
I
S
=30A, V
GS
=0V
I
S
=30A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
60
125
Max. Units
1.2
-
-
V
ns
nC
t
rr
Q
rr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP40T10GP
125
80
T
C
=25 C
100
o
10V
T
C
= 175 C
o
10V
7.0V
I
D
, Drain Current (A)
I
D
, Drain Current (A)
7.0V
75
60
6 .0V
40
6.0V
50
5.0 V
V
G
= 4.5 V
20
5.0V
25
V
G
=4.5V
0
0
2
4
6
8
10
12
0
0
4
8
12
16
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
50
2.8
I
D
= 10 A
T
C
=25
o
C
Normalized R
DS(ON)
2
4
6
8
10
2.4
I
D
=15A
V
G
=10V
R
DS(ON)
(m
Ω
)
40
2.0
1.6
30
1.2
0.8
20
0.4
-50
0
50
100
150
200
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
20
16
Normalized V
GS(th)
(V)
12
T
j
=175
o
C
T
j
=25
o
C
1.2
I
S
(A)
8
0.6
4
0
0
0.2
0.4
0.6
0.8
1
1.2
0.0
-50
0
50
100
150
200
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP40T10GP
f=1.0MHz
12
10000
V
GS
, Gate to Source Voltage (V)
10
I
D
= 40 A
V
DS
= 50 V
C
iss
1000
8
6
C (pF)
C
oss
100
4
C
rss
2
0
0
10
20
30
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100
0.2
I
D
(A)
100us
10
0.1
0.1
0.05
1
1ms
10ms
100ms
DC
T
C
=25
o
C
Single Pulse
P
DM
t
0.02
T
0.01
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
0.1
0.1
1
10
100
1000
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220
E1
E
φ
L2
A
SYMBOLS
Millimeters
MIN
NOM
MAX
L1
A
4.25
0.65
1.15
0.40
1.00
9.70
---
----
12.70
2.60
1.00
2.6
14.70
6.30
3.50
8.40
4.48
0.80
1.38
0.50
1.20
10.00
---
2.54
13.60
2.80
1.40
3.10
15.50
6.50
3.60
8.90
4.70
0.90
1.60
0.60
1.40
10.40
11.50
----
14.50
3.00
1.80
3.6
16
6.70
3.70
9.40
L5
c1
b
b1
c
c1
E
E1
D
L4
e
L
L1
L2
L3
L4
L5
L3
b1
L
φ
D
b
c
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-220
Part Number
Package Code
40T10GP
meet Rohs requirement
LOGO
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS : Sequence
