APM2317A
P-Channel Enhancement Mode MOSFET
Features
•
-20V/-4.5A ,
R
DS(ON)
=28mΩ (typ.) @ V
GS
=-4.5V
R
DS(ON)
=38mΩ (typ.) @ V
GS
=-2.5V
R
DS(ON)
=55mΩ (typ.) @ V
GS
=-1.8V
Pin Description
D
S
G
•
•
•
Super High Dense Cell Design
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Top View of SOT-23
S
Applications
•
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
G
D
P-Channel MOSFET
Ordering and Marking Information
APM2317
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
A : SOT-23
Operating Junction Temperature Range
C : -55 to 150
o
C
Handling Code
TR : Tape & Reel
Assembly Material
L : Lead Free Device
G : Halogen and Lead Free Device
X - Date Code
APM2317 A :
M17X
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
©
ANPEC Electronics Corp.
Rev. B.2 - Dec., 2008
1
www.anpec.com.tw
APM2317A
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
T
J
T
STG
P
D
*
R
θJA
*
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300µs Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
T
A
=25°C
T
A
=100°C
V
GS
=-4.5V
Parameter
(T
A
= 25°C unless otherwise noted)
Rating
-20
±12
-4.5
-18
-1
150
-55 to 150
0.83
0.3
150
Unit
V
A
A
°C
W
°C/W
Note : *Surface Mounted on 1in
2
pad area, t
≤
10sec.
Electrical Characteristics
Symbol
Parameter
(T
A
= 25°C unless otherwise noted)
APM2317A
Min.
Typ.
Max.
Test Conditions
Unit
STATIC CHARACTERISTICS
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
SD
Q
g
Q
gs
Q
gd
a
a
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
V
GS
=0V, I
DS
=-250µA
V
DS
=-16V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=-250µA
V
GS
=±12V, V
DS
=0V
V
GS
=-4.5V, I
DS
=-4.5A
-20
-
-
-0.5
-
-
-
-
-
-
-
-
-
-0.7
-
28
38
55
-0.7
14
2.1
4.7
-
-1
-30
-1
±100
35
50
75
-1.3
20
-
-
V
µA
V
nA
Drain-Source On-State Resistance V
GS
=-2.5V, I
DS
=-2.5A
V
GS
=-1.8V, I
DS
=-2A
Diode Forward Voltage
b
mΩ
V
I
SD
=-1A, V
GS
=0V
GATE CHARGE CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=-10V, V
GS
=-4.5V,
I
DS
=-4.5A
-
-
nC
Copyright
©
ANPEC Electronics Corp.
Rev. B.2 - Dec., 2008
2
www.anpec.com.tw
APM2317A
Electrical Characteristics (Cont.)
Symbol
Parameter
b
(T
A
= 25°C unless otherwise noted)
Test Conditions
APM2317A
Min.
Typ.
Max.
Unit
DYNAMIC CHARACTERISTICS
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
t
rr
q
rr
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=-10V,
Frequency=1.0MHz
-
-
-
-
-
-
-
-
-
-
7
1520
225
165
6
13
86
42
21
9
-
-
-
-
12
24
156
77
-
-
Ω
pF
V
DD
=-10V, R
L
=10Ω,
I
DS
=-1A, V
GEN
=-4.5V,
R
G
=6Ω
ns
I
SD
=-4.5A, dl
SD
/dt =100A/µs
ns
nC
Note a : Pulse test ; pulse width≤300
µ
s, duty cycle≤2%.
Note b : Guaranteed by design, not subject to production testing.
Copyright
©
ANPEC Electronics Corp.
Rev. B.2 - Dec., 2008
3
www.anpec.com.tw
APM2317A
Typical Operating Characteristics
Power Dissipation
1.0
0.9
0.8
5.0
4.5
4.0
Drain Current
-I
D
- Drain Current (A)
0.7
3.5
3.0
2.5
2.0
1.5
1.0
0.5
T
A
=25 C,V
G
=-4.5V
0
20
40
60
80 100 120 140 160
o
P
tot
- Power (W)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
T
A
=25 C
0
20
40
60
80 100 120 140 160
o
0.0
T
j
- Junction Temperature (°C)
T
j
- Junction Temperature (°C)
Safe Operation Area
50
Thermal Transient Impedance
2
Normalized Transient Thermal Resistance
1
Duty = 0.5
0.2
0.1
-I
D
- Drain Current (A)
Rd
s(o
n)
Lim
it
10
300
µ
s
1ms
0.1
0.05
0.02
0.01
1
10ms
0.1
100ms
1s
DC
0.01
Single Pulse
T =25 C
0.01
A
0.01
0.1
o
1
10
100
1E-3
1E-4 1E-3 0.01
Mounted on 1in pad
o
R
θ
JA
: 150 C/W
2
0.1
1
10
100
-V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright
©
ANPEC Electronics Corp.
Rev. B.2 - Dec., 2008
4
www.anpec.com.tw
APM2317A
Typical Operating Characteristics (Cont.)
Output Characteristics
18
16
14
V
GS
= -3, -4, -5, -6, -7, -8, -9, -10V
100
90
Drain-Source On Resistance
R
DS(ON)
- On - Resistance (mΩ)
-2V
80
70
60
50
40
30
20
10
0
V
GS
=1.8V
-I
D
- Drain Current (A)
12
10
8
6
4
2
0
0.0
-1.5V
V
GS
=2.5V
V
GS
=4.5V
0.5
1.0
1.5
2.0
2.5
3.0
0
3
6
9
12
15
18
-V
DS
- Drain - Source Voltage (V)
-I
D
- Drain Current (A)
Drain-Source On Resistance
80
I
D
= -4.5A
70
Gate Threshold Voltage
1.8
I
DS
= -250
µ
A
1.6
R
DS(ON)
- On - Resistance (mΩ)
Normalized Threshold Voltage
0
1
2
3
4
5
6
7
8
9
10
60
50
40
30
20
10
0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
0
25
50
75 100 125 150
-V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
Copyright
©
ANPEC Electronics Corp.
Rev. B.2 - Dec., 2008
5
www.anpec.com.tw
