APM7312K
Dual N-Channel Enhancement Mode MOSFET
Features
•
20V/6A,
R
DS(ON)
=35mΩ(typ.) @ V
GS
= 10V
R
DS(ON)
=45mΩ(typ.) @ V
GS
= 4.5V
R
DS(ON)
=110mΩ(typ.) @ V
GS
= 2.5V
Pin Description
D1
D1
D2
D2
S1
G1
S2
G2
•
•
•
Super High Dense Cell Design
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Top View of SOP
−
8
(8) (7)
D1 D1
(6) (5)
D2 D2
Applications
•
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
S1
(1)
S2
(3)
(2)
G1
(4)
G2
N-Channel MOSFET
Ordering and Marking Information
APM7312
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
K : SOP-8
Operating Junction Temperature Range
C : -55 to 150
o
C
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Date Code
APM7312 K :
APM7312
XXXXX
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
©
ANPEC Electronics Corp.
Rev. B.2 - Dec., 2008
1
www.anpec.com.tw
APM7312K
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
T
J
T
STG
P
D
*
R
θJA
*
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300µs Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
2
(T
A
= 25°C unless otherwise noted)
Parameter
Rating
20
±16
V
GS
=10V
6
24
1.7
150
-55 to 150
T
A
=25°C
T
A
=100°C
2
0.8
62.5
Unit
V
A
A
°C
W
°C/W
Note : *Surface Mounted on 1in
pad area, t
≤
10sec.
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
APM7312K
Min.
Typ.
Max.
Unit
STATIC CHARACTERISTICS
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
SD
Q
g
Q
gs
Q
gd
a
a
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
V
GS
=0V, I
DS
=250µA
V
DS
=16V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±16V, V
DS
=0V
V
GS
=10V, I
DS
=6A
20
-
-
0.7
-
-
-
-
-
-
-
-
0.9
-
35
45
110
0.7
-
1
30
1.5
±100
40
54
120
1.3
V
µA
V
nA
mΩ
V
Drain-Source On-State Resistance V
GS
=4.5V, I
DS
=4A
V
GS
=2.5V, I
DS
=2A
Diode Forward Voltage
b
I
SD
=1.7A, V
GS
=0V
GATE CHARGE CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
V
DS
=10V, V
GS
=4.5V,
I
DS
=6A
-
-
12
3
4.5
16
-
-
nC
Copyright
©
ANPEC Electronics Corp.
Rev. B.2 - Dec., 2008
2
www.anpec.com.tw
APM7312K
Electrical Characteristics (Cont.)
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
b
Test Conditions
APM7312K
Min.
Typ.
Max.
Unit
DYNAMIC CHARACTERISTICS
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Gate Resistance
Input Capacitance
Output Capacitance
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
-
-
-
-
-
2.7
450
100
60
6
5
16
5
-
-
-
-
12
10
30
10
Ω
pF
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DD
=10V, R
L
=10Ω,
I
DS
=1A, V
GEN
=4.5V,
R
G
=6Ω
-
-
-
ns
Note a : Pulse test ; pulse width≤300
µ
s, duty cycle≤2%.
Note b : Guaranteed by design, not subject to production testing.
Copyright
©
ANPEC Electronics Corp.
Rev. B.2 - Dec., 2008
3
www.anpec.com.tw
APM7312K
Typical Operating Characteristics
Power Dissipation
2.5
Drain Current
8
2.0
6
1.5
I
D
- Drain Current (A)
o
P
tot
- Power (W)
4
1.0
2
0.5
o
0.0
T
A
=25 C
0
20
40
60
80 100 120 140 160
0
T
A
=25 C,V
G
=10V
0
20
40
60
80 100 120 140 160
T
j
- Junction Temperature (°C)
T
j
- Junction Temperature (°C)
Safe Operation Area
Normalized Transient Thermal Resistance
100
2
1
Thermal Transient Impedance
Duty = 0.5
0.2
0.1
I
D
- Drain Current (A)
Lim
it
10
300
µ
s
1ms
10ms
Rd
s(o
n)
0.1
0.05
0.02
0.01
1
100ms
1s
0.01
0.1
DC
Single Pulse
T
A
=25 C
0.01
0.01
0.1
o
1
10
100
1E-3
1E-4
Mounted on 1in pad
o
R
θ
JA
: 62.5 C/W
2
1E-3
0.01
0.1
1
10 30
V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright
©
ANPEC Electronics Corp.
Rev. B.2 - Dec., 2008
4
www.anpec.com.tw
APM7312K
Typical Operating Characteristics (Cont.)
Output Characteristics
20
18
16
V
GS
= 4, 5, 6, 7, 8, 9, 10V
140
V
GS
=2.5V
160
Drain-Source On Resistance
R
DS(ON)
- On - Resistance (mΩ)
120
100
80
60
40
20
0
I
D
- Drain Current (A)
14
12
3V
10
8
6
4
2
0
0
2
4
2V
6
8
V
GS
=4.5V
V
GS
=10V
0
4
8
12
16
20
V
DS
- Drain-Source Voltage (V)
I
D
- Drain Current (A)
Transfer Characteristics
24
Gate Threshold Voltage
1.6
1.4
I
DS
= 250
µ
A
Normalized Threshold Voltage
2.5
20
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
I
D
- Drain Current (A)
16
12
8
T
j
=25 C
T
j
=-55 C
T
j
=125 C
o
o
o
4
0
0.0
0.5
1.0
1.5
2.0
0
25
50
75 100 125 150
V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
Copyright
©
ANPEC Electronics Corp.
Rev. B.2 - Dec., 2008
5
www.anpec.com.tw
