型号
- 型号
- 关键词
Power Field-Effect Transistor, 8A I(D), 1000V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN
厂商名称：ADPOW
厂商官网：http://www.advancedpower.com/
下载文档| 型号 | APT1001R6BN-GULLWING | APT901R6BN-BUTT | APT1001R6BN-BUTT |
|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 8A I(D), 1000V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN | Power Field-Effect Transistor, 8A I(D), 900V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Power Field-Effect Transistor, 8A I(D), 1000V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 |
| 厂商名称 | ADPOW | ADPOW | ADPOW |
| 包装说明 | FLANGE MOUNT, R-PSFM-G3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | unknown | unknown | unknown |
| 外壳连接 | DRAIN | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 1000 V | 900 V | 1000 V |
| 最大漏极电流 (ID) | 8 A | 8 A | 8 A |
| 最大漏源导通电阻 | 1.6 Ω | 1.6 Ω | 1.6 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 120 pF | 120 pF | 120 pF |
| JESD-30 代码 | R-PSFM-G3 | R-PSFM-T3 | R-PSFM-T3 |
| 元件数量 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 功耗环境最大值 | 240 W | 240 W | 240 W |
| 最大脉冲漏极电流 (IDM) | 32 A | 32 A | 32 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | NO | NO |
| 端子形式 | GULL WING | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE |
| 晶体管元件材料 | SILICON | SILICON | SILICON |
| 最大关闭时间（toff） | 119 ns | 119 ns | 119 ns |
| 最大开启时间（吨） | 54 ns | 54 ns | 54 ns |
| JEDEC-95代码 | - | TO-247 | TO-247 |
