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APT1201R4BFLL

APT1201R4SFLL

1200V

9A 1.400

Ω

POWER MOS 7

FREDFET

PAK

TO-247

Power MOS 7 is a new generation of low loss, high voltage, N-Channel

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7 by significantly lowering R

DS(ON)

and Q

. Power MOS 7 combines lower conduction and switching losses

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

• Lower Input Capacitance

• Lower Miller Capacitance

• Lower Gate Charge, Qg

MAXIMUM RATINGS

Symbol

DSS

GSM

STG

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

= 25°C

Pulsed Drain Current

• Increased Power Dissipation

• Easier To Drive

• TO-247 or Surface Mount D

PAK Package

All Ratings: T

= 25°C unless otherwise specified.

APT1201R4BFLL_SFLL

UNIT

Volts

Amps

1200

±30

±40

300

2.40

-55 to 150

300

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

= 25°C

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

Volts

Watts

W/°C

°C

Amps

(Repetitive and Non-Repetitive)

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

1210

STATIC ELECTRICAL CHARACTERISTICS

Symbol

DSS

DS(on)

DSS

GSS

GS(th)

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

= 0V, I

= 250µA)

Drain-Source On-State Resistance

MIN

TYP

MAX

UNIT

Volts

1200

1.40

250

1000

±100

= 10V, I

= 4.5A)

Ohms

µA

Volts

3-2004

050-7392 Rev A

Zero Gate Voltage Drain Current (V

= 1200V, V

= 0V)

Zero Gate Voltage Drain Current (V

= 960V, V

= 0V, T

= 125°C)

Gate-Source Leakage Current (V

= ±30V, V

= 0V)

Gate Threshold Voltage (V

= V

, I

= 1mA)

CAUTION:

These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

DYNAMIC CHARACTERISTICS

Symbol

iss

oss

rss

d(on)

d(off)

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

APT1201R4BFLL_SFLL

Test Conditions

= 0V

= 25V

f = 1 MHz

= 10V

= 600V

= 9A @ 25°C

= 15V

= 600V

= 9A @ 25°C

= 1.6Ω

MIN

TYP

MAX

UNIT

2030

309

2500

472

120

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Pulsed Source Current

Diode Forward Voltage

Peak Diode Recovery

MIN

TYP

MAX

UNIT

Amps

Volts

V/ns

µC

Amps

1.3

= 25°C

= 125°C

= 25°C

= 125°C

= 25°C

= 125°C

(Body Diode)

= 0V, I

= -I

9A)

RRM

Reverse Recovery Time

= -I

9A,

= 100A/µs)

Reverse Recovery Charge

= -I

9A,

= 100A/µs)

Peak Recovery Current

= -I

9A,

= 100A/µs)

210

710

.07

2.0

THERMAL CHARACTERISTICS

Symbol

θJC

θJA

Characteristic

Junction to Case

Junction to Ambient

MIN

TYP

MAX

UNIT

°C/W

0.42

1 Repetitive Rating: Pulse width limited by maximum junction

temperature

2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

4 Starting T

= +25°C, L = 29.9mH, R

= 25Ω, Peak I

= 9A

numbers reflect the limitations of the test circuit rather than the

device itself.

≤

700A/µs

≤

1200

≤

150

APT Reserves the right to change, without notice, the specifications and information contained herein.

0.45

, THERMAL IMPEDANCE (°C/W)

D=0.5

0.1

0.05

0.2

0.1

0.05

0.01

0.005

0.02

0.01

SINGLE PULSE

Note:

PDM

Duty Factor D = 1/t2

Peak TJ = PDM x Z

θJC

+ TC

050-7392 Rev A

3-2004

0.001

-5

-3

-2

-1

1.0

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-4

Typical Performance Curves

, DRAIN CURRENT (AMPERES)

APT1201R4BFLL_SFLL

VGS =15,10 & 8V

Graph Deleted

6.5V

5.5V

FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS

(ON), DRAIN-TO-SOURCE ON RESISTANCE

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS

1.40

, DRAIN CURRENT (AMPERES)

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

NORMALIZED TO

= 10V @ 0.5 I [Cont.]

1.30

1.20

1.10

1.00

0.90

0.80

VGS=10V

TJ = +125°C

TJ = +25°C

VGS=20V

TJ = -55°C

, GATE-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 4, TRANSFER CHARACTERISTICS

, DRAIN CURRENT (AMPERES)

DSS

, DRAIN-TO-SOURCE BREAKDOWN

VOLTAGE (NORMALIZED)

4 6 8 10 12 14 16 18 20

, DRAIN CURRENT (AMPERES)

FIGURE 5, R

(ON) vs DRAIN CURRENT

1.15

1.10

1.05

1.00

0.95

0.90

0.85

-50

100

125

150

, CASE TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE

(ON), DRAIN-TO-SOURCE ON RESISTANCE

(NORMALIZED)

-25

50 75 100 125 150

, JUNCTION TEMPERATURE (°C)

FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

1.2

2.5

= 0.5 I

[Cont.]

= 10V

2.0

(TH), THRESHOLD VOLTAGE

(NORMALIZED)

1.1

1.0

0.9

0.8

0.7

0.6

1.5

1.0

0.5

0.0

-50 -25

25 50

75 100 125 150

, JUNCTION TEMPERATURE (°C)

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE

75 100 125 150

, CASE TEMPERATURE (°C)

FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

-50 -25

050-7392 Rev A

3-2004

OPERATION HERE

LIMITED BY RDS (ON)

10,000

5,000

100µS

C, CAPACITANCE (pF)

APT1201R4BFLL_SFLL

, DRAIN CURRENT (AMPERES)

Ciss

1,000

Coss

1mS

100

Crss

, GATE-TO-SOURCE VOLTAGE (VOLTS)

I = I [Cont.]

, REVERSE DRAIN CURRENT (AMPERES)

TC =+25°C

TJ =+150°C

SINGLE PULSE

100

1200

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA

10mS

.01

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

200

100

VDS=100V

VDS=250V

VDS=400V

TJ =+150°C

TJ =+25°C

0 10 20 30 40 50 60 70 80 90 100

, TOTAL GATE CHARGE (nC)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE

0.3

0.5

0.7

0.9

1.1

1.3

1.5

, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE

TO-247 Package Outline

Drain

(Heat Sink)

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

6.15 (.242) BSC

D PAK Package Outline

4.98 (.196)

5.08 (.200)

1.47 (.058)

1.57 (.062)

15.95 (.628)

16.05 (.632)

13.41 (.528)

13.51 (.532)

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

1.04 (.041)

1.15 (.045)

Drain

20.80 (.819)

21.46 (.845)

3.50 (.138)

3.81 (.150)

Revised

4/18/95

13.79 (.543)

13.99 (.551)

Revised

8/29/97

11.51 (.453)

11.61 (.457)

0.46 (.018)

0.56 (.022) {3 Plcs}

4.50 (.177) Max.

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

1.01 (.040)

1.40 (.055)

3-2004

0.40 (.016)

0.79 (.031)

0.020 (.001)

0.178 (.007)

2.67 (.105)

2.84 (.112)

1.27 (.050)

1.40 (.055)

1.98 (.078)

2.08 (.082)

5.45 (.215) BSC

{2 Plcs.}

19.81 (.780)

20.32 (.800)

1.22 (.048)

1.32 (.052)

3.81 (.150)

4.06 (.160)

(Base of Lead)

050-7392 Rev A

Gate

Drain

Source

Heat Sink (Drain)

and Leads

are Plated

2.21 (.087)

2.59 (.102)

5.45 (.215) BSC

2-Plcs.

Dimensions in Millimeters and (Inches)

Source

Drain

Gate

Dimensions in Millimeters (Inches)

APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522

型号	APT1201R4BFLL	APT1201R4SFLL
描述	Power Field-Effect Transistor, 9A I(D), 1200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB, TO-247, 3 PIN	Power Field-Effect Transistor, 9A I(D), 1200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK, 3 PIN
是否无铅	含铅	含铅
是否Rohs认证	不符合	不符合
厂商名称	Microsemi	Microsemi
包装说明	TO-247, 3 PIN	D3PAK, 3 PIN
针数	3	3
Reach Compliance Code	unknown	unknown
雪崩能效等级（Eas）	1210 mJ	1210 mJ
外壳连接	DRAIN	DRAIN
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	1200 V	1200 V
最大漏极电流 (Abs) (ID)	9 A	9 A
最大漏极电流 (ID)	9 A	9 A
最大漏源导通电阻	1.4 Ω	1.4 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-PSFM-T3	R-PSSO-G2
元件数量	1	1
端子数量	3	2
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	300 W	300 W
最大脉冲漏极电流 (IDM)	36 A	36 A
认证状态	Not Qualified	Not Qualified
表面贴装	NO	YES
端子形式	THROUGH-HOLE	GULL WING
端子位置	SINGLE	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON

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