numbers reflect the limitations of the test circuit rather than the
device itself.
IS
≤
-
ID
65A
di
/
dt
≤
700A/µs
VR
≤
200V
TJ
≤
150
°
C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.40
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
10
-5
0.9
0.7
0.5
7-2004
Note:
PDM
t1
t2
0.3
050-7007 Rev C
0.1
0.05
10
-4
SINGLE PULSE
t
Duty Factor D = 1/t2
Peak TJ = PDM x Z
θJC
+ TC
10
-3
10
-2
10
-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1
Typical Performance Curves
200
Junction
temp. (°C)
APT20M36BLL_SLL
VGS=15V
10V
I
D
, DRAIN CURRENT (AMPERES)
RC MODEL
160
0.0329
0.00334F
120
9V
Power
(watts)
0.158
0.00802F
80
8V
7.5V
0.189
Case temperature. (°C)
0.165F
40
7V
6.5V
6V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
5
10
15
20
25
30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.4
V
NORMALIZED TO
= 10V @ I = 32.5A
D
0
140
I
D
, DRAIN CURRENT (AMPERES)
120
100
80
60
40
20
0
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
GS
1.3
1.2
1.1
1.0
0.9
0.8
VGS=10V
TJ = +25°C
TJ = +125°C
TJ = -55°C
0
2
4
6
8
10
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
VGS=20V
0
20
40
60
80
100
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
70
60
50
40
30
20
10
0
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
1.15
I
D
, DRAIN CURRENT (AMPERES)
1.10
1.05
1.00
0.95
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
25
0.90
-25
0
25
50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-50
2.5
I
D
1.2
= 32.5A
= 10V
V
GS
2.0
V
GS
(TH), THRESHOLD VOLTAGE
(NORMALIZED)
1.1
1.0
0.9
0.8
0.7
0.6
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0
25
50
75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-50
-25
050-7007 Rev C
7-2004
260
100
OPERATION HERE
LIMITED BY RDS (ON)
10,000
5,000
APT20M36BLL_SLL
Ciss
I
D
, DRAIN CURRENT (AMPERES)
C, CAPACITANCE (pF)
50
100µS
1,000
500
Coss
10
1mS
5
TC =+25°C
TJ =+150°C
SINGLE PULSE
5
10
50 100 200
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
100
50
Crss
10mS
1
1
16
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
14
12
10
8
6
4
2
50
100
150
200
250
300
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
45
40
35
t
d(off)
0
0
VDS=40V
VDS=100V
VDS=160V
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
I
= 65A
10
20
30
40
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
50
TJ =+150°C
TJ =+25°C
10
0
10
5
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
120
V
DD
G
= 133V
R
= 5Ω
100
80
t
r
and t
f
(ns)
T = 125°C
J
L = 100µH
V
DD
G
t
d(on)
and t
d(off)
(ns)
30
25
20
15
10
5
0
30
= 133V
R
= 5Ω
T = 125°C
J
L = 100µH
60
40
20
0
30
t
f
t
r
t
d(on)
60
70
80
90
100
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
G
40
50
60
70
80
90
100
I
D
(A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1000
40
50
1200
= 133V
R
= 5Ω
1000
SWITCHING ENERGY (µJ)
T = 125°C
L = 100µH
SWITCHING ENERGY (µJ)
J
800
E
on
600
E
off
400
V
I
DD
800
600
400
200
0
30
E
ON
includes
diode reverse recovery.
E
on
= 133V
7-2004
D
J
= 65A
E
off
200
T = 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
050-7007 Rev C
60
70
80
90
100
I
D
(A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
40
50
10 15 20 25 30 35 40 45 50
R
G
, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
Typical Performance Curves
90%
10%
Gate Voltage
T
J
125°C
APT20M36BLL_SLL
Gate Voltage
t
d(on)
t
r
Drain Current
5%
10%
Switching Energy
90%
5%
Drain Voltage
t
d(off)
90%
T
J
125°C
t
f
10%
0
Drain Voltage
Drain Current
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT60DS30
V
DD
I
D
V
DS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
6.15 (.242) BSC
D PAK Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
13.41 (.528)
13.51 (.532)
3
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
1.04 (.041)
1.15 (.045)
Drain
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
Revised
4/18/95
13.79 (.543)
13.99 (.551)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
0.46 (.018)
0.56 (.022) {3 Plcs}
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
19.81 (.780)
20.32 (.800)
1.22 (.048)
1.32 (.052)
Gate
Drain
Source
5.45 (.215) BSC
{2 Plcs.}
Heat Sink (Drain)
and Leads
are Plated
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
stm32/stm8
