Power Field-Effect Transistor, 58A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
厂商名称:ADPOW
厂商官网:http://www.advancedpower.com/
下载文档型号 | APT20M45BNFR-BUTT | APT20M60BNFR-GULLWING | APT20M45BNFR-GULLWING |
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描述 | Power Field-Effect Transistor, 58A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Power Field-Effect Transistor, 50A I(D), 200V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN | Power Field-Effect Transistor, 58A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN |
厂商名称 | ADPOW | ADPOW | ADPOW |
包装说明 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-G3 | FLANGE MOUNT, R-PSFM-G3 |
Reach Compliance Code | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 |
雪崩能效等级(Eas) | 1300 mJ | 1300 mJ | 1300 mJ |
外壳连接 | DRAIN | DRAIN | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 200 V | 200 V | 200 V |
最大漏极电流 (ID) | 58 A | 50 A | 58 A |
最大漏源导通电阻 | 0.045 Ω | 0.06 Ω | 0.045 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss) | 450 pF | 450 pF | 450 pF |
JESD-30 代码 | R-PSFM-T3 | R-PSFM-G3 | R-PSFM-G3 |
元件数量 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
最高工作温度 | 150 °C | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
功耗环境最大值 | 360 W | 360 W | 360 W |
最大脉冲漏极电流 (IDM) | 232 A | 200 A | 232 A |
认证状态 | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | YES | YES |
端子形式 | THROUGH-HOLE | GULL WING | GULL WING |
端子位置 | SINGLE | SINGLE | SINGLE |
晶体管元件材料 | SILICON | SILICON | SILICON |
最大关闭时间(toff) | 230 ns | 230 ns | 230 ns |
最大开启时间(吨) | 120 ns | 120 ns | 120 ns |