型号
- 型号
- 关键词
58A, 200V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
厂商名称：Microsemi
厂商官网：https://www.microsemi.com
下载文档| 型号 | APT20M45BNR-BUTT | APT20M60BNR-BUTT | APT20M60BNR-GULLWING | APT20M45BNR-GULLWING |
|---|---|---|---|---|
| 描述 | 58A, 200V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | 50A, 200V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | 50A, 200V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | 58A, 200V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-G3 | FLANGE MOUNT, R-PSFM-G3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 雪崩能效等级（Eas） | 1300 mJ | 1300 mJ | 1300 mJ | 1300 mJ |
| 外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 200 V | 200 V | 200 V | 200 V |
| 最大漏极电流 (ID) | 58 A | 50 A | 50 A | 58 A |
| 最大漏源导通电阻 | 0.045 Ω | 0.06 Ω | 0.06 Ω | 0.045 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 450 pF | 450 pF | 450 pF | 450 pF |
| JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-G3 | R-PSFM-G3 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 功耗环境最大值 | 360 W | 360 W | 360 W | 360 W |
| 最大脉冲漏极电流 (IDM) | 232 A | 200 A | 200 A | 232 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | YES | YES |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | GULL WING | GULL WING |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| 最大关闭时间（toff） | 230 ns | 230 ns | 230 ns | 230 ns |
| 最大开启时间（吨） | 120 ns | 120 ns | 120 ns | 120 ns |
| 厂商名称 | Microsemi | Microsemi | Microsemi | - |
