numbers reflect the limitations of the test circuit rather than the
device itself.
IS
≤
-
35A
di
/
dt
≤
700A/µs
VR
≤
500V
TJ
≤
150
°
C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.30
0.25
0.9
0.7
0.20
0.15
0.10
0.05
0
0.5
Note:
PDM
t1
t2
6-2004
0.3
050-7025 Rev C
0.1
0.05
10
-5
10
-4
SINGLE PULSE
Peak TJ = PDM x Z
θJC
+ TC
Duty Factor D = t1/t2
10
-3
10
-2
10
-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
100
15 &10V
I
D
, DRAIN CURRENT (AMPERES)
APT5014BFLL_SFLL
8V
80
RC MODEL
Junction
temp. (°C)
0.119
Power
(watts)
0.191
Case temperature. (°C)
0.319F
0.0135F
60
7V
6.5V
20
20
6V
5.5V
5V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
5
10
15
20
25
30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.2
V
NORMALIZED TO
= 10V @ 17.5A
0
100
GS
I
D
, DRAIN CURRENT (AMPERES)
80
1.15
1.10
1.05
VGS=20V
1.0
0.95
0.90
60
VGS=10V
40
TJ = +125°C
TJ = +25°C
TJ = -55°C
0
1
2
3
4
5
6
7
8
9
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
20
0
0
35
30
25
20
15
10
5
0
25
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50
10
20
30
40
50
60
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
I
D
, DRAIN CURRENT (AMPERES)
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
-25
0
25
50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
2.5
I
D
= 17.5A
= 10V
V
2.0
V
GS
(TH), THRESHOLD VOLTAGE
(NORMALIZED)
GS
1.1
1.0
0.9
0.8
0.7
0.6
-50
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25
0
25
50
75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7025 Rev C
6-2004
Typical Performance Curves
140
OPERATION HERE
LIMITED BY RDS (ON)
10,000
APT5014BFLL_SFLL
Ciss
I
D
, DRAIN CURRENT (AMPERES)
50
C, CAPACITANCE (pF)
100µS
1,000
Coss
10
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
100
Crss
10mS
0
10
20
30
40
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
1
1
5
10
50 100
500
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
10
16
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
= 35A
200
100
50
TJ =+150°C
TJ =+25°C
14
12
10
8
6
4
2
20
40
60
80
100
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
60
50
t
d(off)
0
0
VDS=100V
VDS=250V
VDS=400V
10
5
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
70
60
50
V
DD
G
= 333V
R
= 5Ω
T = 125°C
J
L = 100µH
t
f
t
d(on)
and t
d(off)
(ns)
40
30
20
10
0
V
DD
G
= 333V
R
= 5Ω
t
r
and t
f
(ns)
T = 125°C
J
40
30
20
L = 100µH
t
d(on)
t
r
10
0
0
30
40
50
60
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
G
10
20
30
40
50
60
I
D
(A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1400
1200
SWITCHING ENERGY (µJ)
V
I
DD
0
10
20
1000
= 333V
= 333V
R
= 5Ω
D
J
= 35A
SWITCHING ENERGY (µJ)
800
T = 125°C
J
T = 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
E
off
L = 100µH
E
ON
includes
diode reverse recovery.
1000
800
600
400
200
0
600
E
on
400
E
on
6-2004
200
050-7025 Rev C
E
off
30
40
50
60
I
D
(A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
10
20
10 15 20 25 30 35 40 45 50
R
G
, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
APT5014BFLL_SFLL
Gate Voltage
10 %
t
d(on)
t
r
90%
Drain Current
T = 125 C
J
90%
Gate Voltage
t
d(off)
Drain Voltage
T = 125 C
J
90%
tf
5%
Switching Energy
10 %
Drain Voltage
10%
0
Switching Energy
Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF60
APT30DF60
V
DD
I
C
V
CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
6.15 (.242) BSC
D PAK Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
13.41 (.528)
13.51 (.532)
3
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
1.04 (.041)
1.15 (.045)
Drain
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
Revised
4/18/95
13.79 (.543)
13.99 (.551)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
0.46 (.018)
0.56 (.022) {3 Plcs}
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
19.81 (.780)
20.32 (.800)
1.22 (.048)
1.32 (.052)
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
