APT54H50B2
APT54H50L
500V, 54A, 0.107Ω Max, trr ≤230ns
N-Channel Ultrafast Recovery FREDFET
Power MOS 8
™
is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
maximum reliability in ZVS phase shifted bridge and other circuits through much reduced
t
rr
, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and
a greatly reduced ratio of C
rss
/C
iss
result in excellent noise immunity and low switching
loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help
control di/dt during switching, resulting in low EMI and reliable paralleling, even when
switching at very high frequency.
T-Max
®
TO-264
APT54H50B2
APT54H50L
D
Single die FREDFET
G
S
FEATURES
• Fast switching with low EMI
• Very Low t
rr
for maximum reliability
• Ultra low C
rss
for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• UPS
• Welding
• Solar inverters
• Telecom rectifiers
Absolute Maximum Ratings
Symbol
I
D
I
DM
V
GS
E
AS
I
AR
Parameter
Continuous Drain Current @ T
C
= 25°C
Continuous Drain Current @ T
C
= 100°C
Pulsed Drain Current
Gate-Source Voltage
Single Pulse Avalanche Energy
2
Avalanche Current, Repetitive or Non-Repetitive
1
Ratings
54
34
175
±30
1200
28
Unit
A
V
mJ
A
Thermal and Mechanical Characteristics
Symbol
P
D
R
θ
JC
R
θ
CS
T
J
,T
STG
T
L
W
T
Characteristic
Total Power Dissipation @ T
C
= 25°C
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
Soldering Temperature for 10 Seconds (1.6mm from case)
Package Weight
0.22
6.2
10
1.1
-55
0.11
150
300
Min
Typ
Max
780
0.16
Unit
W
°C/W
°C
5-2007
050-8120
Rev A
oz
g
in·lbf
N·m
Torque
Mounting Torque ( TO-264 Package), 4-40 or M3 screw
Microsemi Website - http://www.microsemi.com
Static Characteristics
Symbol
V
BR(DSS)
∆V
BR(DSS)
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
T
J
= 25°C unless otherwise specified
Test Conditions
V
GS
= 0V
,
I
D
= 250µA
Reference to 25°C, I
D
= 250µA
V
GS
= 10V
,
I
D
= 28A
APT54H50B2_L
Typ
0.60
091
4
-10
Max
Unit
V
V/°C
Ω
V
mV/°C
µA
nA
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source On Resistance
3
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Min
500
V
GS
= V
DS
,
I
D
= 2.5mA
V
DS
= 500V
V
GS
= 0V
T
J
= 25°C
T
J
= 125°C
3
0.107
5
250
1000
±100
V
GS
= ±30V
Dynamic Characteristics
Symbol
g
fs
C
iss
C
rss
C
oss
C
o(cr)
C
o(er)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
4
T
J
= 25°C unless otherwise specified
Test Conditions
V
DS
= 50V
,
I
D
= 28A
V
GS
= 0V
,
V
DS
= 25V
f = 1MHz
Parameter
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance, Charge Related
Min
Typ
43
8800
120
945
550
Max
Unit
S
pF
5
V
GS
= 0V
,
V
DS
= 0V to 333V
Effective Output Capacitance, Energy Related
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
V
GS
= 0 to 10V
,
I
D
= 28A,
V
DS
= 250V
Resistive Switching
V
DD
= 333V
,
I
D
= 28A
R
G
= 4.7Ω
6
,
V
GG
= 15V
275
220
50
100
38
45
100
33
nC
ns
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
rrm
dv/dt
Parameter
Test Conditions
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
Min
D
Typ
Max
54
Unit
A
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
1
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Peak Recovery dv/dt
G
S
T
J
= 25°C
T
J
= 125°C
175
1.0
230
420
1.02
2.63
8.0
11.6
30
V
ns
µC
A
V/ns
I
SD
= 28A
,
T
J
= 25°C, V
GS
= 0V
I
SD
= 28A
3
di
SD
/
dt = 100A/µs
V
DD
= 100V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
SD
≤ 28A, di/dt ≤1000A/µs, V
DD
= 333V,
T
J
= 125°C
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at T
J
= 25°C, L = 3.06mH, R
G
= 4.7Ω, I
AS
= 28A.
5-2007
Rev A
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 C
o(cr)
is defined as a fixed capacitance with the same stored charge as C
OSS
with V
DS
= 67% of V
(BR)DSS
.
5 C
o(er)
is defined as a fixed capacitance with the same stored energy as C
OSS
with V
DS
= 67% of V
(BR)DSS
. To calculate C
o(er)
for any value of
V
DS
less than V
(BR)DSS,
use this equation: C
o(er)
= -2.04E-7/V
DS
^2 + 4.76E-8/V
DS
+ 1.36E-10.
6 R
G
is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
050-8120
250
V
GS
= 10V
90
80
T
J
= -55°C
APT54H50B2_L
T = 125°C
J
V
GS
= 7 & 10V
6.5V
200
I
D
, DRAIN CURRENT (A)
I
D
, DRIAN CURRENT (A)
70
60
50
40
30
20
10
0
0
30
25
20
15
10
5
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
5.5V
150
T
J
= 25°C
6V
100
50
T
J
= 125°C
T
J
= 150°C
5V
0
25
20
15
10
5
0
V
DS(ON)
, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
NORMALIZED TO
V
GS
= 10V @ 28A
R
DS(ON)
, DRAIN-TO-SOURCE ON RESISTANCE
2.5
175
150
I
D
, DRAIN CURRENT (A)
125
100
75
50
25
0
0
V
DS
> I
D(ON)
x R
DS(ON)
MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
2.0
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
1.5
1.0
0.5
0
25 50 75 100 125 150
0
-55 -25
T
J
, JUNCTION TEMPERATURE (°C)
Figure 3, R
DS(ON)
vs Junction Temperature
70
60
T
J
= -55°C
10
8
6
4
2
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
C
iss
20,000
10,000
g
fs
, TRANSCONDUCTANCE
50
40
30
20
10
0
0
T
J
= 125°C
C, CAPACITANCE (pF)
T
J
= 25°C
1000
C
oss
100
C
rss
10
40
30
20
10
I
D
, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
I
D
= 28A
50
16
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
14
12
10
8
6
4
2
500
400
300
200
100
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
175
0
I
SD,
REVERSE DRAIN CURRENT (A)
150
125
100
75
50
25
0
0
T
J
= 25°C
T
J
= 150°C
V
DS
=
100V
V
DS
=
250V
050-8120
50 100 150 200 250 300 350
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
0
0
1.0 1.2 1.4
0.6 0.8
0.2 0.4
V
SD
, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
Rev A
5-2007
V
DS
=
400V
200
100
I
DM
200
100
I
DM
APT54H50B2_L
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
10
13µs
100µs
1ms
Rds(on)
13µs
10
Rds(on)
100µs
1ms
10ms
100ms
DC line
10ms
100ms
DC line
1
T
J
=
125°C
T
C
=
75°C
1
T
J
=
150°C
T
C
=
25°C
0.1
1
600
100
10
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
0.1
Scaling for Different Case & Junction
Temperatures:
I
D
=
I
D(T = 25
°
C)
*(
T
J
-
T
C
)/125
C
600
100
10
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
1
T
J
(°C)
0.0337
Dissipated Power
(Watts)
0.000713
0.0189
0.527
0.0687
T
C
(°C)
0.0575
Z
EXT
are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Figure 11, Transient Thermal Impedance Model
0.18
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
10
-5
D = 0.9
0.7
0.5
0.3
0.1
0.05
SINGLE PULSE
Z
EXT
Note:
PDM
t1
t2
Duty Factor D =
1
/
t2
Peak TJ = PDM x Z
θJC
+ TC
t
1
= Pulse Duration
t
10
-1
10
-2
10
-3
RECTANGULAR PULSE DURATION (seconds)
Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
10
-4
1.0
T-MAX
®
(B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.79 (.228)
6.20 (.244)
e3 100% Sn Plated
Drain
20.80 (.819)
21.46 (.845)
Drain
25.48 (1.003)
26.49 (1.043)
4.50 (.177) Max.
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
2.29 (.090)
2.69 (.106)
5-2007
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
Gate
Drain
Source
Rev A
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
050-8120
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
