APTC60TAM35P
Triple phase leg
Super Junction MOSFET
V
DSS
= 600V
R
DSon
= 35mΩ max @ Tj = 25°C
I
D
= 72A @ Tc = 25°C
Application
•
Welding converters
•
Switched Mode Power Supplies
•
Uninterruptible Power Supplies
•
Motor control
W
Power Module
VBUS1
VBUS2
VBUS3
G1
G3
G5
S1
U
S3
V
S5
Features
•
- Ultra low R
DSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
High level of integration
G2
G4
G6
S2
0/VBUS1
S4
0/VBUS2
S6
0/VBUS3
•
•
•
VBUS 1
VBUS 2
VBUS 3
G1
0/VBUS 1
S1
S2
G2
0/VBUS 2
G3
S3
S4
G4
0/VBUS 3
G5
S5
S6
G6
U
V
W
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
R
DSon
P
D
I
AR
E
AR
E
AS
Benefits
•
Outstanding performance at high frequency operation
•
Direct mounting to heatsink (isolated package)
•
Low junction to case thermal resistance
•
Solderable terminals both for power and signal for
easy PCB mounting
•
Very low (12mm) profile
•
Each leg can be easily paralleled to achieve a phase
leg of three times the current capability
•
Module can be configured as a three phase bridge
•
Module can be configured as a boost followed by a
full bridge
Max ratings
600
72
54
200
±20
35
416
20
1
1800
Unit
V
A
V
mΩ
W
A
mJ
APTC60TAM35P – Rev 0 September, 2004
Parameter
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
T
c
= 25°C
T
c
= 80°C
T
c
= 25°C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-6
APTC60TAM35P
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol
BV
DSS
I
DSS
R
DS(on)
V
GS(th)
I
GSS
Characteristic
Drain - Source Breakdown Voltage
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
V
GS
= 0V, I
D
= 375µA
Min
600
V
GS
= 0V,V
DS
= 600V
V
GS
= 0V,V
DS
= 600V
Typ
1
Max
40
375
35
3.9
±150
Unit
V
µA
mΩ
V
nA
T
j
= 25°C
T
j
= 125°C
2.1
V
GS
= 10V, I
D
= 72A
V
GS
= V
DS
, I
D
= 5.4mA
V
GS
= ±20 V, V
DS
= 0V
3
Dynamic Characteristics
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
Bus
= 300V
I
D
= 72A
Inductive Switching @ 125°C
V
GS
= 15V
V
Bus
= 400V
I
D
= 72A
R
G
= 2.5Ω
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 400V
I
D
= 72A, R
G
= 2.5Ω
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 400V
I
D
= 72A, R
G
= 2.5Ω
Min
Typ
14
5.13
0.42
518
58
222
21
30
283
84
1340
1960
2192
2412
Max
Unit
nF
nC
ns
µJ
µJ
Source - Drain diode ratings and characteristics
Symbol
I
S
V
SD
dv/dt
t
rr
Q
rr
Characteristic
Continuous Source current
(Body diode)
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
Tc = 25°C
Tc = 80°C
Min
Typ
72
54
Max
Unit
A
V
GS
= 0V, I
S
= - 72A
I
S
= - 72A
V
R
= 350V
di
S
/dt = 200A/µs
T
j
= 25°C
T
j
= 25°C
580
46
1.2
6
V
V/ns
ns
µC
APTC60TAM35P – Rev 0 September, 2004
E
on
includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
I
S
≤
- 72A di/dt
≤
200A/µs
V
R
≤
V
DSS
T
j
≤
150°C
APT website – http://www.advancedpower.com
2-6
APTC60TAM35P
Thermal and package characteristics
Symbol
R
thJC
V
ISOL
T
J
T
STG
T
C
Torque
Wt
Characteristic
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min
2500
-40
-40
-40
3
Typ
Max
0.3
150
125
100
5
250
Unit
°C/W
V
°C
N.m
g
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M6
Package outline
5 places (3:1)
APT website – http://www.advancedpower.com
3-6
APTC60TAM35P – Rev 0 September, 2004
APTC60TAM35P
Typical Performance Curve
0.35
Thermal Impedance (°C/W)
0.3
0.25
0.2
0.15
0.1
0.05
0.5
0.3
0.1
0.05
0.0001
Single Pulse
0.001
0.01
0.1
1
10
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0
0.00001
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
400
360
320
280
240
200
160
120
80
40
0
0
280
6.5V
6V
5.5V
5V
4.5V
4V
5
10
15
20
V
DS
, Drain to Source Voltage (V)
R
DS
(on) vs Drain Current
I
D
, DC Drain Current (A)
Normalized to
V
GS
=10V @ 36A
Transfert Characteristics
240
200
160
120
80
40
0
25
0
2
3
4
5
6
V
GS
, Gate to Source Voltage (V)
1
7
T
J
=125°C
T
J
=25°C
T
J
=-55°C
V
DS
> I
D
(on)xR
DS
(on)MAX
250µs pulse test @ < 0.5 duty cycle
I
D
, Drain Current (A)
I
D
, Drain Current (A)
V
GS
=15&10V
R
DS
(on) Drain to Source ON Resistance
1.1
1.05
1
0.95
0.9
0
DC Drain Current vs Case Temperature
80
V
GS
=10V
70
60
50
40
30
20
10
0
25
50
75
100
125
T
C
, Case Temperature (°C)
150
V
GS
=20V
20
40
60
80
100
120
I
D
, Drain Current (A)
APT website – http://www.advancedpower.com
4-6
APTC60TAM35P – Rev 0 September, 2004
APTC60TAM35P
R
DS
(on), Drain to Source ON resistance
(Normalized)
Breakdown Voltage vs Temperature
BV
DSS
, Drain to Source Breakdown
Voltage (Normalized)
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25
50
75 100 125 150
T
J
, Junction Temperature (°C)
ON resistance vs Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
T
J
, Junction Temperature (°C)
Maximum Safe Operating Area
V
GS
=10V
I
D
= 72A
Threshold Voltage vs Temperature
1.2
V
GS
(TH), Threshold Voltage
(Normalized)
1000
I
D
, Drain Current (A)
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75 100 125 150
T
C
, Case Temperature (°C)
100
10
limited by R
DS
on
100 µs
1 ms
DC line
10 ms
1
0.1
1
Single pulse
T
J
=150°C
10
100
1000
V
DS
, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
V
GS
, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
Ciss
C, Capacitance (pF)
14
12
10
8
6
4
2
0
0
100
200 300 400
Gate Charge (nC)
500
600
APTC60TAM35P – Rev 0 September, 2004
10000
I
D
=72A
T
J
=25°C
V
DS
=120V
V
DS
=300V
V
DS
=480V
Coss
1000
Crss
100
10
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
APT website – http://www.advancedpower.com
5-6
