APTC90DSK12CT1G
Dual buck chopper
Super Junction MOSFET
SiC chopper diode
V
DSS
= 900V
R
DSon
= 120mΩ max @ Tj = 25°C
I
D
= 30A @ Tc = 25°C
Application
•
AC and DC motor control
•
Switched Mode Power Supplies
Features
•
-
-
-
-
-
•
Ultra low R
DSon
Low Miller capacitance
Ultra low gate charge
Avalanche energy rated
Very rugged
SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
Very low stray inductance
- Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
•
•
•
Pins 3/4 must be shorted together
Benefits
•
Outstanding performance at high frequency operation
•
Direct mounting to heatsink (isolated package)
•
Low junction to case thermal resistance
•
Solderable terminals both for power and signal for
easy PCB mounting
•
Low profile
•
RoHS Compliant
Max ratings
900
30
23
75
±20
120
250
8.8
2.9
1940
Unit
V
A
V
mΩ
W
A
mJ
APTC90DSK12CT1G – Rev 0 September, 2009
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
R
DSon
P
D
I
AR
E
AR
E
AS
Parameter
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
T
c
= 25°C
T
c
= 80°C
T
c
= 25°C
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–6
APTC90DSK12CT1G
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
I
DSS
R
DS(on)
V
GS(th)
I
GSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
V
GS
= 0V,V
DS
= 900V
V
GS
= 0V,V
DS
= 900V
Min
T
j
= 25°C
T
j
= 125°C
2.5
Typ
500
100
3
Max
100
120
3.5
100
Unit
µA
mΩ
V
nA
V
GS
= 10V, I
D
= 26A
V
GS
= V
DS
, I
D
= 3mA
V
GS
= ±20 V, V
DS
= 0V
Dynamic Characteristics
Symbol Characteristic
C
iss
Input Capacitance
C
oss
Output Capacitance
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
E
on
E
off
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Test Conditions
V
GS
= 0V ; V
DS
= 100V
f = 1MHz
V
GS
= 10V
V
Bus
= 400V
I
D
= 26A
Inductive Switching (125°C)
V
GS
= 10V
V
Bus
= 600V
I
D
= 26A
R
G
= 7.5Ω
Inductive switching @ 25°C
V
GS
= 10V ; V
Bus
= 600V
I
D
= 26A ; R
G
= 7.5Ω
Inductive switching @ 125°C
V
GS
= 10V ; V
Bus
= 600V
I
D
= 26A ; R
G
= 7.5Ω
Min
Typ
6800
330
270
32
115
70
20
400
25
900
750
1278
867
µJ
ns
nC
Max
Unit
pF
µJ
SiC chopper diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
I
RM
I
F
V
F
Q
C
C
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
Total Capacitive Charge
Total Capacitance
I
F
= 10A
Test Conditions
V
R
=1200V
T
j
= 25°C
T
j
= 175°C
Tc = 100°C
T
j
= 25°C
T
j
= 175°C
Min
1200
Typ
32
56
10
1.6
2.3
40
96
69
Max
200
1000
1.8
3
Unit
V
µA
A
V
APTC90DSK12CT1G – Rev 0 September, 2009
I
F
= 10A, V
R
= 600V
di/dt =500A/µs
f = 1MHz, V
R
= 200V
f = 1MHz, V
R
= 400V
nC
pF
www.microsemi.com
2–6
APTC90DSK12CT1G
Temperature sensor NTC
(see application note APT0406 on www.microsemi.com for more information).
Symbol
R
25
∆R
25
/R
25
B
25/85
∆B/B
Characteristic
Resistance @ 25°C
T
25
= 298.15 K
T
C
=100°C
R
T
=
R
25
⎡
⎛
1
1
⎞⎤
R
T
: Thermistor value at T
exp
⎢
B
25 / 85
⎜
− ⎟⎥
⎜
T
⎟
⎝
25
T
⎠⎦
⎣
T: Thermistor temperature
Min
Typ
50
5
3952
4
Max
Unit
kΩ
%
K
%
Thermal and package characteristics
Symbol
R
thJC
V
ISOL
T
J
T
STG
T
C
Torque
Wt
Characteristic
Junction to Case Thermal Resistance
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
CoolMOS
SiC Diode
4000
-40
-40
-40
2.5
Min
Typ
Max
0.5
1.8
150
125
100
4.7
80
Unit
°C/W
V
°C
N.m
g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
SP1 Package outline
(dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
www.microsemi.com
3–6
APTC90DSK12CT1G – Rev 0 September, 2009
APTC90DSK12CT1G
Typical CoolMOS Performance Curve
250
200
150
ZCS
V
DS
=600V
D=50%
R
G
=7.5Ω
T
J
=125°C
T
C
=75°C
R
DS(on)
, Drain to Source ON resistance
(Normalized)
Operating Frequency vs Drain Current
ON resistance vs Temperature
3.0
2.5
2.0
1.5
1.0
0.5
25
50
75
100
125
150
T
J
, Junction Temperature (°C)
Switching Energy vs Gate Resistance
Frequency (kHz)
ZVS
100
50
0
10
12.5
15
17.5
20
22.5
25
I
D
, Drain Current (A)
Hard
switching
Switching Energy vs Current
2
Eon and Eoff (mJ)
2
1
1
0
5
10
15
20
25
30
I
D
, Drain Current (A)
35
40
V
DS
=600V
R
G
=7.5Ω
T
J
=125°C
L=100µH
Eon
3
Switching Energy (mJ)
Eoff
2
Eon
Eoff
1
V
DS
=600V
I
D
=26A
T
J
=125°C
L=100µH
0
5
10
15
20
25
30
35
Gate Resistance (Ohms)
www.microsemi.com
4–6
APTC90DSK12CT1G – Rev 0 September, 2009
APTC90DSK12CT1G
0.6
Thermal Impedance (°C/W)
0.5
0.4
0.3
0.2
0.1
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
V
GS
=20, 8V
80
6V
BV
DSS
, Drain to Source Breakdown
Voltage
120
I
D
, Drain Current (A)
Breakdown Voltage vs Temperature
1000
975
950
925
900
25
50
75
100
125
T
J
, Junction Temperature (°C)
DC Drain Current vs Case Temperature
35
I
D
, DC Drain Current (A)
30
25
20
15
10
5
0
25
50
75
100
125
T
C
, Case Temperature (°C)
150
5V
40
0
0
5
10
15
V
DS
, Drain to Source Voltage (V)
Maximum Safe Operating Area
1000
I
D
, Drain Current (A)
20
100
limited by R
DS
on
100 µs
10
10 ms
1
Single pulse
T
J
=150°C
T
C
=25°C
1
10
100
1000
0.1
V
DS
, Drain to Source Voltage (V)
Capacitance vs Drain to Source Voltage
V
GS
, Gate to Source Voltage (V)
100000
C, Capacitance (pF)
10000
1000
100
10
1
0
25 50 75 100 125 150 175 200
V
DS
, Drain to Source Voltage (V)
Crss
Ciss
10
8
6
4
2
0
Gate Charge vs Gate to Source Voltage
V
DS
=400V
I
D
=26A
T
J
=25°C
Coss
0
50
100 150 200
Gate Charge (nC)
250
300
www.microsemi.com
5–6
APTC90DSK12CT1G – Rev 0 September, 2009
