APTGF350DU60
Dual common source
NPT IGBT Power Module
V
CES
= 600V
I
C
= 350A @ Tc = 80°C
Application
·
AC Switches
·
Switched Mode Power Supplies
·
Uninterruptible Power Supplies
Features
·
Non Punch Through (NPT) THUNDERBOLT IGBT
®
·
·
·
G1
E1
C1
E
C2
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
E2
G2
Benefits
·
Outstanding performance at high frequency
operation
·
Stable temperature behavior
·
Very rugged
·
Direct mounting to heatsink (isolated package)
·
Low junction to case thermal resistance
·
Easy paralleling due to positive TC of VCEsat
·
Low profile
Absolute maximum ratings
Symbol
V
CES
I
C
I
CM
V
GE
P
D
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
T
c
= 25°C
T
c
= 80°C
T
c
= 25°C
T
c
= 25°C
T
j
= 150°C
Max ratings
600
430
350
1225
±20
1562
1225A @ 600V
Unit
V
A
APTGF350DU60 – Rev 1 March, 2004
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-6
APTGF350DU60
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
I
CES
V
CE(on)
V
GE(th)
I
GES
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
Zero Gate Voltage Collector Current
Collector Emitter on Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
u
Turn-off Switching Energy
v
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
u
Turn-off Switching Energy
v
Test Conditions
V
GE
= 0V, I
C
= 200µA
T
j
= 25°C
V
GE
= 0V
V
CE
= 600V
T
j
= 125°C
T
j
= 25°C
V
GE
=15V
I
C
= 360A
T
j
= 125°C
V
GE
= V
CE
, I
C
= 4mA
V
GE
= ±20V, V
CE
= 0V
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
V
GS
= 15V
V
Bus
= 300V
I
C
= 360A
Inductive Switching (25°C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 360A
R
G
= 1.25W
Min
600
Typ
Max
200
4000
2.5
5
±300
Unit
V
µA
V
V
nA
Unit
nF
2.0
2.2
3
Dynamic Characteristics
Min
Typ
17.2
1.88
1.6
1320
1160
800
26
25
150
30
13.5
11.5
26
25
170
40
17.2
14
Max
nC
ns
mJ
Inductive Switching (125°C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 360A
R
G
= 1.25W
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Maximum Average Forward Current
I
F(AV)
V
F
Diode Forward Voltage
Test Conditions
50% duty cycle
Min
Tc = 80°C
I
F
= 400A
I
F
= 800A
I
F
= 400A
I
F
= 400A
V
R
= 400V
di/dt =800A/µs
I
F
= 400A
V
R
= 400V
di/dt =800A/µs
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
Typ
400
1.6
1.9
1.4
180
220
1560
5800
Max
1.8
Unit
A
V
t
rr
Q
rr
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
APTGF350DU60 – Rev 1 March, 2004
u
E
on
includes diode reverse recovery
v
In accordance with JEDEC standard JESD24-1
APT website – http://www.advancedpower.com
2-6
APTGF350DU60
Thermal and package characteristics
Symbol Characteristic
R
thJC
V
ISOL
T
J
T
STG
T
C
Torque
Wt
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
To heatsink
Mounting torque
For terminals
Package Weight
IGBT
Diode
2500
-40
-40
-40
3
2
150
125
100
5
3.5
280
Min
Typ
Max
0.08
0.16
Unit
°C/W
V
°C
N.m
g
M6
M5
Package outline
APT website – http://www.advancedpower.com
3-6
APTGF350DU60 – Rev 1 March, 2004
APTGF350DU60
Typical Performance Curve
Output characteristics (V
GE
=15V)
Output Characteristics (V
GE
=10V)
1200
250µs Pulse Test
< 0.5% Duty cycle
1200
Ic, Collector Current (A)
1000
800
600
T
J
=125°C
250µs Pulse Test
< 0.5% Duty cycle
T
J
=-55°C
T
J
=25°C
Ic, Collector Current (A)
1000
800
600
400
200
0
T
J
=-55°C
T
J
=25°C
400
200
0
0
1
2
3
4
V
CE
, Collector to Emitter Voltage (V)
Transfer Characteristics
250µs Pulse Test
< 0.5% Duty cycle
T
J
=125°C
0
1
2
3
V
CE
, Collector to Emitter Voltage (V)
Gate Charge
I
C
= 360A
T
J
= 25°C
V
CE
=120V
V
CE
=300V
4
V
GE
, Gate to Emitter Voltage (V)
1200
18
16
14
12
10
8
6
4
2
0
0
200
400
Ic, Collector Current (A)
1000
800
600
400
200
0
0
V
CE
=480V
T
J
=125°C
T
J
=25°C
1
T
J
=-55°C
10
2 3 4 5 6 7 8 9
V
GE
, Gate to Emitter Voltage (V)
600
800
1000 1200 1400
Gate Charge (nC)
V
CE
, Collector to Emitter Voltage (V)
On state Voltage vs Junction Temperature
4
3.5
3
2.5
2
1.5
1
0.5
0
-50
-25
0
25
50
75 100
T
J
, Junction Temperature (°C)
125
Ic=180A
250µs Pulse Test
< 0.5% Duty cycle
V
GE
= 15V
V
CE
, Collector to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
8
7
6
5
4
3
2
1
0
6
10
12
14
V
GE
, Gate to Emitter Voltage (V)
8
16
Ic=180A
Ic=360A
T
J
= 25°C
250µs Pulse Test
< 0.5% Duty cycle
Ic=720A
Ic=720A
Ic=360A
Breakdown Voltage vs Junction Temp.
Collector to Emitter Breakdown
Voltage (Normalized)
1.20
1.10
1.00
0.90
0.80
0.70
-50
-25
0
25
50
75
100
125
T
J
, Junction Temperature (°C)
Ic, DC Collector Current (A)
DC Collector Current vs Case Temperature
640
480
320
160
0
-50 -25
0
25
50
75
100 125 150
T
C
, Case Temperature (°C)
APT website – http://www.advancedpower.com
4-6
APTGF350DU60 – Rev 1 March, 2004
APTGF350DU60
Turn-On Delay Time vs Collector Current
td(on), Turn-On Delay Time (ns)
td(off), Turn-Off Delay Time (ns)
35
250
V
GE
=15V,
T
J
=125°C
Turn-Off Delay Time vs Collector Current
30
V
GE
= 15V
25
Tj = 25°C
V
CE
= 400V
R
G
= 1.25Ω
200
150
V
GE
=15V,
T
J
=25°C
20
100
V
CE
= 400V
R
G
= 1.25Ω
200
300
15
100
200
300
400
500
600
50
100
400
500
600
I
CE
, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
80
V
CE
= 400V
R
G
= 1.25Ω
tf, Fall Time (ns)
I
CE
, Collector to Emitter Current (A)
Current Fall Time vs Collector Current
80
tr, Rise Time (ns)
60
60
T
J
= 125°C
40
V
GE
=15V,
T
J
=125°C
40
T
J
= 25°C
V
CE
= 400V, V
GE
= 15V, R
G
= 1.25Ω
20
20
0
100
200
300
400
500
I
CE
, Collector to Emitter Current (A)
600
0
100
200
300
400
500
I
CE
, Collector to Emitter Current (A)
600
Turn-On Energy Loss vs Collector Current
E
off
, Turn-off Energy Loss (mJ)
32
E
on
, Turn-On Energy Loss (mJ)
24
V
CE
= 400V
R
G
= 1.25Ω
T
J
=125°C,
V
GE
=15V
24
20
16
12
8
4
Turn-Off Energy Loss vs Collector Current
V
CE
= 400V
V
GE
= 15V
R
G
= 1.25Ω
T
J
= 125°C
16
8
0
100
T
J
=25°C,
V
GE
=15V
T
J
= 25°C
200
300
400
500
600
0
100
200
300
400
500
600
I
CE
, Collector to Emitter Current (A)
Switching Energy Losses vs Gate Resistance
64
Switching Energy Losses (mJ)
V
CE
= 400V
V
GE
= 15V
T
J
= 125°C
Eon, 720A
Eoff, 720A
Eoff, 360A
I
CE
, Collector to Emitter Current (A)
Switching Energy Losses vs Junction Temp.
Switching Energy Losses (mJ)
40
32
24
16
8
Eoff, 180A
Eon, 360A
Eoff, 360A
Eon, 180A
V
CE
= 400V
V
GE
= 15V
R
G
= 1.25Ω
Eon, 720A
48
Eoff, 720A
32
Eon, 360A
Eoff, 180A
16
Eon, 180A
0
0
2
4
6
8
10
Gate Resistance (Ohms)
12
0
0
25
50
75
100
T
J
, Junction Temperature (°C)
125
APT website – http://www.advancedpower.com
5-6
APTGF350DU60 – Rev 1 March, 2004
