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APTGF360U60D4

Insulated Gate Bipolar Transistor, 450A I(C), 600V V(BR)CES, N-Channel, MODULE-4

器件类别:分立半导体    晶体管   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
Objectid
2121124589
零件包装代码
MODULE
包装说明
MODULE-4
针数
4
Reach Compliance Code
unknown
ECCN代码
EAR99
YTEOL
0
外壳连接
ISOLATED
最大集电极电流 (IC)
450 A
集电极-发射极最大电压
600 V
配置
SINGLE WITH BUILT-IN DIODE
门极-发射极最大电压
20 V
JESD-30 代码
R-XUFM-X4
JESD-609代码
e0
元件数量
1
端子数量
4
最高工作温度
150 °C
封装主体材料
UNSPECIFIED
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
极性/信道类型
N-CHANNEL
最大功率耗散 (Abs)
1560 W
认证状态
Not Qualified
表面贴装
NO
端子面层
TIN LEAD
端子形式
UNSPECIFIED
端子位置
UPPER
晶体管应用
POWER CONTROL
晶体管元件材料
SILICON
标称断开时间 (toff)
430 ns
标称接通时间 (ton)
250 ns
VCEsat-Max
2.45 V
文档预览
APTGF360U60D4
Single switch
NPT IGBT Power Module
1
V
CES
= 600V
I
C
= 360A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Non Punch Through (NPT) fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Low stray inductance
- M6 connectors for power
- M4 connectors for signal
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
3
5
2
2
4
5
1
3
Absolute maximum ratings
Symbol
V
CES
I
C
I
CM
V
GE
P
D
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-3
APTGF360U60D4 – Rev 0
Reverse Bias Safe Operation Area
720A@520V
January, 2005
Max ratings
600
450
360
720
±20
1560
Unit
V
A
APTGF360U60D4
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
I
CES
V
CE(on)
V
GE(th)
I
GES
Symbol
C
ies
C
res
T
d(on)
T
r
T
d(off)
T
f
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
Zero Gate Voltage Collector Current
Collector Emitter on Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
V
GE
= 0V
V
CE
= 600V
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
V
GE
= 15V
I
C
= 360A
T
j
= 125°C
V
GE
= V
CE
, I
C
= 6mA
V
GE
= 20V, V
CE
= 0V
Test Conditions
V
GE
= 0V, V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 400A
R
G
= 2.2Ω
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 400A
R
G
= 2.2Ω
Min
Typ
1
1
1.95
2.2
5.5
Max
500
2.45
6.5
400
Unit
µA
mA
V
V
nA
4.5
Dynamic Characteristics
Characteristic
Input Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn on Energy
Turn off Energy
Min
Typ
17
1.6
150
72
350
50
175
75
375
55
9
15
Max
Unit
nF
ns
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
V
F
Q
rr
Diode Forward Voltage
Reverse Recovery Charge
Test Conditions
I
F
= 400A
V
GE
= 0V
I
F
= 400A
V
R
= 300V
di/dt =4400A/µs
Min
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
Typ
1.25
1.2
27
44
Max
1.6
Unit
V
µC
Thermal and package characteristics
Symbol Characteristic
R
thJC
V
ISOL
T
J
T
STG
T
C
Torque
Wt
Junction to Case
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
M6
M4
IGBT
Diode
Min
Typ
Max
0.08
0.15
150
125
125
5
2
420
Unit
°C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
g
APT website – http://www.advancedpower.com
2-3
APTGF360U60D4 – Rev 0
2500
-40
-40
-40
3
1
V
°C
N.m
January, 2005
APTGF360U60D4
Package outline
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
3-3
APTGF360U60D4 – Rev 0
January, 2005
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