APTGT150DH120G
Asymmetrical - Bridge
Fast Trench + Field Stop IGBT3
Power Module
VBUS
Q1
G1
CR3
V
CES
= 1200V
I
C
= 150A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Switched Reluctance Motor Drives
Features
Fast Trench + Field Stop IGBT3 Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
E1
OUT1 OUT2
Q4
CR2
G4
E4
0/VBUS
Absolute maximum ratings
Symbol
V
CES
I
C
I
CM
V
GE
P
D
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
Max ratings
1200
220
150
350
±20
690
300A @ 1150V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-6
APTGT150DH120G – Rev 2 October , 2012
APTGT150DH120G
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
I
CES
V
CE(sat)
V
GE(th)
I
GES
Zero Gate Voltage Collector Current
Collector Emitter Saturation Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
V
GE
= 0V, V
CE
= 1200V
T
j
= 25°C
V
GE
= 15V
I
C
= 150A
T
j
= 125°C
V
GE
= V
CE
, I
C
= 3 mA
V
GE
= 20V, V
CE
= 0V
Min
Typ
1.7
2.0
5.8
Max
350
2.1
6.5
400
Unit
µA
V
V
nA
5.0
Dynamic Characteristics
Symbol
C
ies
C
oes
C
res
T
d(on)
T
r
T
d(off)
T
f
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 150A
R
G
= 2.2
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 150A
R
G
= 2.2
V
GE
= ±15V
T
j
= 125°C
V
Bus
= 600V
I
C
= 150A
T
j
= 125°C
R
G
= 2.2
Min
Typ
10.7
0.56
0.48
280
40
420
75
290
45
520
90
14
mJ
16
Max
Unit
nF
ns
ns
Diode ratings and characteristics
Symbol Characteristic
V
RRM
I
RM
I
F
V
F
t
rr
Q
rr
E
r
Maximum Peak Repetitive Reverse Voltage
Test Conditions
T
j
= 25°C
T
j
= 125°C
Tc = 80°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
Min
1200
Typ
Max
250
600
Unit
V
µA
A
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
V
R
=1200V
I
F
= 150A
150
1.6
1.6
170
280
14
28
6
11
2.1
V
ns
µC
mJ
APTGT150DH120G – Rev 2 October , 2012
I
F
= 150A
V
R
= 600V
di/dt =2500A/µs
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2-6
APTGT150DH120G
Thermal and package characteristics
Symbol Characteristic
R
thJC
V
ISOL
T
J
T
STG
T
C
Torque
Wt
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Min
IGBT
Diode
4000
-40
-40
-40
3
2
Typ
Max
0.18
0.30
150
125
100
5
3.5
300
Unit
°C/W
V
°C
N.m
g
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
For terminals
M6
M5
SP6 Package outline
(dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
APTGT150DH120G – Rev 2 October , 2012
www.microsemi.com
3-6
APTGT150DH120G
Typical Performance Curve
Output Characteristics (V
GE
=15V)
Output Characteristics
300
T
J
= 125°C
250
T
J
=125°C
V
GE
=17V
V
GE
=13V
V
GE
=15V
V
GE
=9V
300
250
I
C
(A)
T
J
=25°C
200
I
C
(A)
200
150
100
50
0
150
100
50
0
0
1
2
V
CE
(V)
3
4
0
1
2
V
CE
(V)
3
4
300
250
200
I
C
(A)
150
100
50
0
5
Transfert Characteristics
32
T
J
=25°C
T
J
=125°C
Energy losses vs Collector Current
28
24
E (mJ)
20
16
12
8
4
0
0
50
100
150
I
C
(A)
Reverse Bias Safe Operating Area
350
300
250
I
C
(A)
Eoff
Er
V
CE
= 600V
V
GE
= 15V
R
G
= 2.2Ω
T
J
= 125°C
Eoff
Eon
T
J
=125°C
6
7
8
9
10
11
12
200
250
300
V
GE
(V)
Switching Energy Losses vs Gate Resistance
34
30
26
E (mJ)
22
18
14
10
6
2
0
2
4
6
8 10 12 14
Gate Resistance (ohms)
16
18
Eon
Er
V
CE
= 600V
V
GE
=15V
I
C
= 150A
T
J
= 125°C
Eon
200
150
100
50
0
0
400
800
V
CE
(V)
1200
1600
V
GE
=15V
T
J
=125°C
R
G
=2.2Ω
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.2
Thermal Impedance (°C/W)
0.9
0.16
0.12
0.5
0.08
0.04
0.3
0.1
0.05
0.0001
0.001
Single Pulse
0.01
0.1
1
10
0.7
IGBT
0
0.00001
rectangular Pulse Duration (Seconds)
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4-6
APTGT150DH120G – Rev 2 October , 2012
APTGT150DH120G
Operating Frequency vs Collector Current
Fmax, Operating Frequency (kHz)
60
50
40
30
20
10
0
0
40
80
120
I
C
(A)
160
200
240
Hard
switching
ZCS
ZVS
V
CE
=600V
D=50%
R
G
=2.2Ω
T
J
=125°C
Forward Characteristic of diode
300
250
200
I
F
(A)
150
100
50
0
0
0.4
0.8
1.2
1.6
V
F
(V)
2
2.4
T
J
=125°C
T
J
=125°C
T
J
=25°C
T
c
=75°C
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
Thermal Impedance (°C/W)
0.3
0.25
0.2
0.15
0.1
0.05
0.5
0.3
0.1
0.05
0.0001
0.001
Single Pulse
0.01
0.1
1
10
0.9
0.7
Diode
0
0.00001
rectangular Pulse Duration (Seconds)
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5-6
APTGT150DH120G – Rev 2 October , 2012
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