APTGT600DA60G
Boost chopper
Trench + Field Stop IGBT3
Power Module
VBUS
V
CES
= 600V
I
C
= 600A* @ Tc = 80°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
Trench + Field Stop IGBT3 Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
CR1
OUT
Q2
G2
E2
0/VBUS
Absolute maximum ratings
Symbol
V
CES
I
C
I
CM
V
GE
P
D
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 150°C
Max ratings
600
700 *
600 *
800
±20
2300
1200A @ 550V
Unit
V
A
APTGT600DA60G – Rev 2 October, 2012
V
W
* Specification of IGBT device but output current must be limited to 500A to not exceed a delta of temperature greater
than 100°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-6
APTGT600DA60G
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
I
CES
V
CE(sat)
V
GE(th)
I
GES
Zero Gate Voltage Collector Current
Collector Emitter Saturation Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
V
GE
= 0V, V
CE
= 600V
T
j
= 25°C
V
GE
=15V
I
C
= 600A
T
j
= 150°C
V
GE
= V
CE
, I
C
= 2mA
V
GE
= 20V, V
CE
= 0V
Min
Typ
1.4
1.5
5.8
Max
750
1.8
6.5
800
Unit
µA
V
V
nA
5.0
Dynamic Characteristics
Symbol
C
ies
C
oes
C
res
T
d(on)
T
r
T
d(off)
T
f
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn on Energy
Turn off Energy
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 600A
R
G
= 2
Inductive Switching (150°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 600A
R
G
= 2
T
j
= 25°C
V
GE
= ±15V
T
j
= 150°C
V
Bus
= 300V
I
C
= 600A
T
j
= 25°C
R
G
= 2
T
j
= 150°C
Min
Typ
49
3.1
1.5
130
55
250
60
145
60
320
80
3
5.5
17
21
mJ
mJ
Max
Unit
nF
ns
ns
Chopper diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
I
RM
I
F
V
F
t
rr
Q
rr
E
r
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
I
F
= 600A
V
R
= 300V
I
F
= 600A
V
GE
= 0V
Test Conditions
V
R
=600V
T
j
= 25°C
T
j
= 150°C
Tc = 80°C
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
Min
600
Typ
Max
350
550
600
1.5
1.4
120
210
27
57
6.9
14.1
1.9
Unit
V
µA
A
V
ns
µC
mJ
APTGT600DA60G – Rev 2 October, 2012
di/dt =5000A/µs
www.microsemi.com
2-6
APTGT600DA60G
Thermal and package characteristics
Symbol Characteristic
R
thJC
V
ISOL
T
J
T
STG
T
C
Torque
Wt
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Min
IGBT
Diode
4000
-40
-40
-40
3
2
Typ
Max
0.065
0.11
175
125
100
5
3.5
300
Unit
°C/W
V
°C
N.m
g
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
For terminals
M6
M5
SP6 Package outline
(dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
www.microsemi.com
3-6
APTGT600DA60G – Rev 2 October, 2012
APTGT600DA60G
Typical Performance Curve
Output Characteristics (V
GE
=15V)
Output Characteristics
1200
T
J
= 150°C
1200
1000
I
C
(A)
T
J
=25°C
T
J
=125°C
T
J
=150°C
1000
V
GE
=19V
V
GE
=13V
V
GE
=15V
V
GE
=9V
800
600
400
200
800
I
C
(A)
600
400
200
T
J
=25°C
0
0
0.5
1
1.5
V
CE
(V)
2
2.5
0
0
0.5
1
1.5
2
V
CE
(V)
2.5
3
3.5
1200
1000
800
Transfert Characteristics
T
J
=25°C
Energy losses vs Collector Current
40
35
30
E (mJ)
25
20
15
10
5
0
11
0
200
400
600
I
C
(A)
Reverse Bias Safe Operating Area
1400
1200
Eon
Eon
V
CE
= 300V
V
GE
= 15V
R
G
= 1Ω
T
J
= 150°C
Eoff
Er
I
C
(A)
600
400
T
J
=125°C
T
J
=150°C
200
0
5
6
7
8
V
GE
(V)
9
T
J
=25°C
10
800
1000 1200
Switching Energy Losses vs Gate Resistance
40
V
CE
= 300V
V
GE
=15V
I
C
= 600A
T
J
= 150°C
Eoff
30
E (mJ)
1000
I
C
(A)
800
600
400
200
0
6
0
V
GE
=15V
T
J
=150°C
R
G
=1Ω
20
10
Eon
Er
0
0
1
2
3
4
5
Gate Resistance (ohms)
100 200 300 400 500 600 700
V
CE
(V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.07
Thermal Impedance (°C/W)
0.06
0.05
0.04
0.03
0.02
0.01
0.1
0.05
0.0001
0.001
Single Pulse
0.01
0.1
1
10
0.9
0.7
0.5
0.3
IGBT
0
0.00001
Rectangular Pulse Duration in Seconds
www.microsemi.com
4-6
APTGT600DA60G – Rev 2 October, 2012
APTGT600DA60G
Operating Frequency vs Collector Current
Fmax, Operating Frequency (kHz)
120
100
80
60
40
20
0
0
200
400
600
I
C
(A)
800
1000
Hard
switching
ZCS
ZVS
V
CE
=300V
D=50%
R
G
=1Ω
T
J
=150°C
Forward Characteristic of diode
1200
1000
800
I
F
(A)
600
400
200
0
0
0.4
0.8
1.2
V
F
(V)
1.6
2
T
J
=125°C
T
J
=150°C
T
J
=25°C
T
c
=85°C
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.12
Thermal Impedance (°C/W)
0.1
0.08
0.06
0.04
0.02
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Diode
0.05
0
0.00001
Rectangular Pulse Duration in Seconds
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5-6
APTGT600DA60G – Rev 2 October, 2012
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