APTLGF300A1208G
Phase leg
Intelligent Power Module
V
CES
= 1200V
I
C
= 300A @ Tc = 80°C
Application
Motor control
Uninterruptible Power Supplies
Switched Mode Power Supplies
Amplifier
Features
Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA & SCSOA rated
Integrated Fail Safe IGBT Protection (Driver)
- Top Bottom input signals Interlock
- Isolated DC/DC Converter
Low stray inductance
M5 power connectors
High level of integration
VBUS
0/VBUS
OUT
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
www.microsemi.com
1-7
APTLGF300A1208G – Rev 1 October 2012
Benefits
Outstanding performance at high frequency operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Very high noise immunity
(common mode rejection > 25kV/µs)
Galvanic Isolation: 3750V for the optocoupler
2500V for the transformer
5V logic level with Schmitt-trigger Input
Single V
DD
=5V supply required
Secondary auxiliary power supplies internally generated
(15V, -6V)
Optocoupler qualified to AEC-Q100 test guidelines
RoHS compliant
INL
INH
GND
GND
VDD
VDD
APTLGF300A1208G
All ratings @ T
j
= 25°C unless otherwise specified
1. Inverter Power Module
Absolute maximum ratings
Symbol
V
CES
I
C
I
CM
P
D
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Reverse Bias Safe Operating Area
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
Max ratings
1200
400
300
600
1780
600A @ 1200V
Unit
V
A
W
Electrical Characteristics
Symbol Characteristic
I
CES
V
CE(sat)
Zero Gate Voltage Collector Current
Collector Emitter Saturation Voltage
Test Conditions
V
GE
= 0V
V
CE
= 1200V
V
DD
= V
IN
= 5V
I
C
= 300A
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
Min
Min
Typ
Max
500
750
3.9
Unit
µA
V
3.2
4
Typ
21
2.9
1.52
50
30
60
40
25
15
1800
Dynamic Characteristics
Symbol
C
ies
C
oes
C
res
T
r
T
f
T
r
T
f
E
on
E
off
I
sc
R
thJC
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Rise Time
Fall Time
Rise Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Short Circuit data
Junction to Case thermal resistance
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
DD
= V
IN
= 5V
V
Bus
= 600V ; I
C
= 300A
Inductive Switching (125°C)
V
DD
= V
IN
= 5V
V
Bus
= 600V
I
C
= 300A
V
DD
= V
IN
= 5V; V
Bus
=900V
t
p
≤
10µs ; T
j
= 125°C
Max
Unit
nF
ns
ns
mJ
A
0.07
°C/W
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2-7
APTLGF300A1208G – Rev 1 October 2012
APTLGF300A1208G
Reverse diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
I
RM
I
F
V
F
t
rr
Q
rr
E
rr
R
thJC
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
Junction to Case Thermal Resistance
I
F
= 300A
V
R
= 600V
I
F
= 300A
Test Conditions
V
R
=1200V
T
j
= 25°C
T
j
= 125°C
Tc = 80°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
Min
1200
Typ
Max
250
500
300
2.1
1.9
120
210
22
56
7.2
18
0.12
Unit
V
µA
A
V
ns
µC
mJ
°C/W
di/dt =6000A/µs
2. Driver
Absolute maximum ratings
Symbol
V
DD
V
INi
I
VDDmax
f
max
Parameter
Supply Voltage
Input signal voltage i=L, H
V
INi
= 0V, i =L & H
V
DD
=5V, V
INH
= /V
INL
;
F
out
= 50kHz
Maximum Switching Frequency
Maximum Supply current
Max ratings
5.5
5.5
0.35
2
50
Unit
V
A
kHz
Driver Electrical Characteristics
Symbol
V
DD
V
INi(max)
V
INi (th+)
V
INi(th-)
R
INi
T
d(on)
D
T
T
d(off)
PWD
PDD
V
ISOL
Characteristic
Operating Supply Voltage
Maximum Input Voltage
Positive Going Threshold Voltage
Negative Going Threshold Voltage
Input Resistance *
Turn On delay time
Built in dead time
Turn Off delay time
Pulse Width Distortion
Propagation Delay Difference
between any two driver
Primary to Secondary Isolation
Test Conditions
Min
4.5
-0.5
Typ
5
5
3.2
1
1
1100
600
750
Max
5.5
5.5
Unit
V
V
kΩ
ns
300
T
d(on)
- T
d(off)
-350
2500
350
ns
V
RMS
APTLGF300A1208G – Rev 1 October 2012
i = L, H
Driver + IGBT
Driver + IGBT
* Low impedance guarantees good noise immunity.
Including built in dead time.
www.microsemi.com
3-7
APTLGF300A1208G
3. Package characteristics
Symbol
V
ISOL
T
J
T
OP
T
STG
T
C
Torque
Wt
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Operating Ambient Temperature
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
For terminals
M5
M5
Min
4000
-40
-40
-40
-40
2
2
Typ
Max
150
85
100
100
4.7
4
Unit
V
°C
N.m
g
550
4. LP8 Package outline
(dimensions in mm)
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4-7
APTLGF300A1208G – Rev 1 October 2012
APTLGF300A1208G
Typical IGBT Performance Curve
Output Characteristics
Reverse Bias Safe Operating Area
700
V
DD
= 5V
V
IN
=5V
600
500
I
C
(A)
T
J
=25°C
600
500
I
C
(A)
T
J
=125°C
400
300
200
100
0
0
1
2
3
V
CE
(V)
4
5
6
400
300
200
100
0
0
200
400
600
V
CE
(V)
Operating Frequency vs Collector Current
60
50
40
30
20
10
0
0
50
100 150 200 250 300 350
I
C
(A)
Limited by
internal gate
drive power
dissipation
hard
switching
V
CE
=600V
D=50%
V
DD
=5V
V
IN
=5V
T
J
=125°C
T
C
=75°C
T
J
=125°C
800
1000 1200
Energy losses vs Collector Current
60
50
E (mJ)
40
30
20
10
0
0
100
200
300
I
C
(A)
400
500
600
Eoff
V
CE
= 600V
V
DD
= 5V
V
IN
= 5V
T
J
= 125°C
Eon
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.08
Thermal Impedance (°C/W)
0.07
0.06
0.05
0.04
0.03
0.02
0.01
D = 0.9
0.7
0.5
0.3
0.1
0.05
0.0001
0.001
Single Pulse
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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5-7
APTLGF300A1208G – Rev 1 October 2012
0
0.00001
Fmax, Operating Frequency (kHz)
70
