APTM100AM90FG
Phase leg
MOSFET Power Module
VBUS
Q1
V
DSS
= 1000V
R
DSon
= 90m typ @ Tj = 25°C
I
D
= 78A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
G1
OUT
S1
Q2
Features
Power MOS 7
®
FREDFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
G2
S2
0/VBUS
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
R
DSon
P
D
I
AR
E
AR
E
AS
Parameter
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
T
c
= 25°C
T
c
= 80°C
Max ratings
1000
78
59
312
±30
105
1250
25
50
3000
Unit
V
A
V
m
W
A
mJ
T
c
= 25°C
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–7
APTM100AM90FG– Rev 3 October, 2012
APTM100AM90FG
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
I
DSS
R
DS(on)
V
GS(th)
I
GSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
V
GS
= 0V,V
DS
= 1000V
V
GS
= 0V,V
DS
= 800V
T
j
= 25°C
T
j
= 125°C
Min
Typ
V
GS
= 10V, I
D
= 39A
V
GS
= V
DS
, I
D
= 10mA
V
GS
= ±30 V, V
DS
= 0V
90
3
Max
400
2000
105
5
±250
Unit
µA
m
V
nA
Dynamic Characteristics
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
Bus
= 500V
I
D
= 78A
Inductive switching @ 125°C
V
GS
= 15V
V
Bus
= 670V
I
D
= 78A
R
G
=1.2
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 670V
I
D
= 78A, R
G
= 1.2Ω
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 670V
I
D
= 78A, R
G
= 1.2Ω
Min
Typ
20.7
3.5
0.64
744
96
488
18
12
155
40
3.6
2.5
5.7
3.1
mJ
mJ
ns
nC
Max
Unit
nF
Source - Drain diode ratings and characteristics
Symbol Characteristic
I
S
Continuous Source current
(Body diode)
V
SD
Diode Forward Voltage
dv/dt Peak Diode Recovery
t
rr
Q
rr
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
Tc = 25°C
Tc = 80°C
V
GS
= 0V, I
S
= - 78A
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
14.4
38.9
Min
Typ
Max
78
59
1.3
18
320
650
Unit
A
V
V/ns
ns
APTM100AM90FG– Rev 3 October, 2012
I
S
= - 78A
V
R
= 670V
di
S
/dt = 400A/µs
µC
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
I
S
- 78A
di/dt
700A/µs
V
R
V
DSS
T
j
150°C
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2–7
APTM100AM90FG
Thermal and package characteristics
Symbol
R
thJC
V
ISOL
T
J
T
STG
T
C
Torque
Wt
Characteristic
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Min
4000
-40
-40
-40
3
2
Typ
Max
0.1
150
125
100
5
3.5
300
Unit
°C/W
V
°C
N.m
g
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
For terminals
M6
M5
SP6 Package outline
(dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
APTM100AM90FG– Rev 3 October, 2012
www.microsemi.com
3–7
APTM100AM90FG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.12
Thermal Impedance (°C/W)
0.1
0.08
0.06
0.04
0.02
0.9
0.7
0.5
0.3
0.1
0.05
0.0001
0.001
Single Pulse
0
0.00001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
240
I
D
, Drain Current (A)
I
D
, Drain Current (A)
200
160
120
80
40
0
0
5
10
15
20
25
V
DS
, Drain to Source Voltage (V)
R
DS(on)
vs Drain Current
I
D
, DC Drain Current (A)
Normalized to
V
GS
=10V @ 39A
V
GS
=10V
5.5V
5V
V
GS
=15, 10&8V
7V
Transfert Characteristics
320
280
240
200
160
120
80
40
0
30
0
1
2
3
4
5
T
J
=25°C
T
J
=125°C
V
DS
> I
D
(on)xR
DS
(on)MAX
250µs pulse test @ < 0.5 duty cycle
6.5V
6V
T
J
=-55°C
6
7
8
9
V
GS
, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
APTM100AM90FG– Rev 3 October, 2012
R
DS
(on) Drain to Source ON Resistance
1.4
1.3
1.2
1.1
1
0.9
0.8
0
V
GS
=20V
40
80
120
160
200
240
I
D
, Drain Current (A)
T
C
, Case Temperature (°C)
www.microsemi.com
4–7
APTM100AM90FG
R
DS
(on), Drain to Source ON resistance
(Normalized)
Breakdown Voltage vs Temperature
BV
DSS
, Drain to Source Breakdown
Voltage (Normalized)
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
V
GS
(TH), Threshold Voltage
(Normalized)
I
D
, Drain Current (A)
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
T
C
, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
V
GS
, Gate to Source Voltage (V)
100000
Ciss
C, Capacitance (pF)
10000
14
12
10
8
6
4
2
0
0
200
400
600
800
1000
Gate Charge (nC)
APTM100AM90FG– Rev 3 October, 2012
ON resistance vs Temperature
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25
50
75 100 125 150
T
J
, Junction Temperature (°C)
Maximum Safe Operating Area
V
GS
=10V
I
D
=39A
1000
100µs
limited by R
DS
on
100
1ms
10
Single pulse
T
J
=150°C
T
C
=25°C
10ms
1
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
I
D
=78A
T
J
=25°C
V
DS
=200V
V
DS
=500V
V
DS
=800V
Coss
1000
Crss
100
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
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5–7
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