APTM20HM16FTG
Full - Bridge
MOSFET Power Module
VBUS
Q1
Q3
V
DSS
= 200V
R
DSon
= 16m typ @ Tj = 25°C
I
D
= 104A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
G1
S1
Q2
OUT1
OUT2
Q4
G3
S3
G2
S2
NTC1
0/VBU S
NTC2
G4
S4
Features
Power MOS 7
®
FREDFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
R
DSon
P
D
I
AR
E
AR
E
AS
Parameter
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
T
c
= 25°C
T
c
= 80°C
Max ratings
200
104
77
416
±30
19
390
104
50
3000
Unit
V
A
V
m
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–7
APTM20HM16FTG – Rev 3 October, 2012
T
c
= 25°C
APTM20HM16FTG
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
I
DSS
R
DS(on)
V
GS(th)
I
GSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
V
GS
= 0V,V
DS
= 200V
V
GS
= 0V,V
DS
= 160V
Min
T
j
= 25°C
T
j
= 125°C
Typ
V
GS
= 10V, I
D
= 52A
V
GS
= V
DS
, I
D
= 2.5mA
V
GS
= ±30 V, V
DS
= 0V
16
3
Max
250
1000
19
5
±100
Unit
µA
m
V
nA
Dynamic Characteristics
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
Bus
= 100V
I
D
=104A
Inductive switching @ 125°C
V
GS
= 15V
V
Bus
= 133V
I
D
= 104A
R
G
= 5Ω
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 133V
I
D
= 104A, R
G
= 5Ω
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 133V
I
D
= 104A, R
G
= 5Ω
Min
Typ
7220
2330
146
140
53
67
32
64
88
116
849
929
936
986
µJ
µJ
ns
nC
Max
Unit
pF
Source - Drain diode ratings and characteristics
Symbol Characteristic
Continuous Source current
I
S
(Body diode)
V
SD
Diode Forward Voltage
dv/dt Peak Diode Recovery
t
rr
Q
rr
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
Tc = 25°C
Tc = 80°C
V
GS
= 0V, I
S
= - 104A
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
0.9
3.4
Min
Typ
Max
104
77
1.3
5
230
450
Unit
A
V
V/ns
ns
µC
I
S
= - 104A
V
R
= 133V
di
S
/dt = 100A/µs
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
V
R
V
DSS
T
j
150°C
I
S
- 104A di/dt
700A/µs
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2–7
APTM20HM16FTG – Rev 3 October, 2012
APTM20HM16FTG
Thermal and package characteristics
Symbol
R
thJC
V
ISOL
T
J
T
STG
T
C
Torque
Wt
Characteristic
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Min
4000
-40
-40
-40
2.5
Typ
Max
0.32
150
125
100
4.7
160
Unit
°C/W
V
°C
N.m
g
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To Heatsink
M5
Temperature sensor NTC
(see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R
25
Resistance @ 25°C
B
25/85
T
25
= 298.15 K
R
T
½
R
25
1
1
R
T
: Thermistor value at T
exp
B
25 / 85
T
25
T
T: Thermistor temperature
Min
Typ
50
3952
Max
Unit
k
K
SP4 Package outline
(dimensions in mm)
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
www.microsemi.com
3–7
APTM20HM16FTG – Rev 3 October, 2012
APTM20HM16FTG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
Thermal Impedance (°C/W)
0.3
0.25
0.2
0.15
0.1
0.05
0.3
0.1
Single Pulse
0.9
0.7
0.5
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
V
GS
=15V
700
600
I
D
, Drain Current (A)
500
400
300
200
100
0
Transfert Characteristics
300
I
D
, Drain Current (A)
250
200
150
100
50
0
T
J
=25°C
T
J
=125°C
T
J
=-55°C
V
DS
> I
D
(on)xR
DS
(on)MAX
250µs pulse test @ < 0.5 duty cycle
10V
9V
8.5V
8V
7.5V
7V
6.5V
0
4
8
12
16
20
24
28
0
V
DS
, Drain to Source Voltage (V)
R
DS(on)
vs Drain Current
1.2
I
D
, DC Drain Current (A)
Normalized to
V
GS
=10V @ 52A
1 2 3 4 5 6 7 8 9 10
V
GS
, Gate to Source Voltage (V)
R
DS(on)
Drain to Source ON Resistance
DC Drain Current vs Case Temperature
120
100
80
60
40
20
0
1.1
1
V
GS
=10V
V
GS
=20V
0.9
0.8
0
25
50
75
100
125
150
I
D
, Drain Current (A)
25
50
75
100
125
150
APTM20HM16FTG – Rev 3 October, 2012
T
C
, Case Temperature (°C)
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4–7
APTM20HM16FTG
RDS(on), Drain to Source ON resistance
(Normalized)
Breakdown Voltage vs Temperature
BV
DSS
, Drain to Source Breakdown
Voltage (Normalized)
1.15
1.10
1.05
1.00
0.95
0.90
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
V
GS
(TH), Threshold Voltage
(Normalized)
I
D
, Drain Current (A)
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25 50
75 100 125 150
T
C
, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
C, Capacitance (pF)
ON resistance vs Temperature
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25
50
75 100 125 150
T
J
, Junction Temperature (°C)
Maximum Safe Operating Area
V
GS
=10V
I
D
= 52A
1000
limited by
R
DSon
100
100µs
10
1ms
Single pulse
T
J
=150°C
T
C
=25°C
1
10ms
100ms
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
V
GS
, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
I
D
=104A
V
DS
=40V
12
T
J
=25°C
10
8
6
4
2
0
0
20
40
60
80 100 120 140 160
APTM20HM16FTG – Rev 3 October, 2012
V
DS
=100V
10000
Ciss
Coss
V
DS
=160V
1000
Crss
100
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
Gate Charge (nC)
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5–7
