APTM50UM09FAG
Single Switch
MOSFET Power Module
SK
S
D
V
DSS
= 500V
R
DSon
= 9 m typ @ Tj = 25°C
I
D
= 497A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 7
®
FREDFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
M5 power connectors
High level of integration
AlN substrate for improved thermal performance
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
G
DK
All ratings @ T
j
= 25°C unless otherwise specified
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
R
DSon
P
D
I
AR
E
AR
E
AS
Parameter
Drain - Source Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
T
c
= 25°C
T
c
= 80°C
Max ratings
500
497
371
1988
±30
10
5000
71
50
3000
Unit
V
A
V
m
W
A
mJ
APTM50UM09FAG Rev 3 August, 2017
T
c
= 25°C
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
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1–7
APTM50UM09FAG
Electrical Characteristics
Symbol
I
DSS
R
DS(on)
V
GS(th)
I
GSS
Characteristic
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
V
GS
= 0V,V
DS
= 500V
V
GS
= 10V, I
D
= 248.5A
V
GS
= V
DS
, I
D
= 30mA
V
GS
= ±30 V, V
DS
= 0V
Min
Typ
9
3
Max
600
10
5
±450
Unit
µA
m
V
nA
Dynamic Characteristics
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
E
on
E
off
R
thJC
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Junction to Case Thermal Resistance
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
Bus
= 250V
I
D
=497A
Inductive switching @ 125°C
V
GS
= 15V
V
Bus
= 333V
I
D
= 497A
R
G
= 0.5
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 333V
I
D
= 497A, R
G
= 0.5Ω
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 333V
I
D
= 497A, R
G
= 0.5Ω
Min
Typ
63.3
12.4
0.63
1200
300
630
21
42
96
100
6
6.2
9.48
6.96
0.025
mJ
ns
nC
Max
Unit
nF
mJ
°C/W
Source - Drain diode ratings and characteristics
Symbol Characteristic
I
S
Continuous Source current
(Body diode)
V
SD
Diode Forward Voltage
dv/dt Peak Diode Recovery
t
rr
Q
rr
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
Tc = 25°C
Tc = 80°C
V
GS
= 0V, I
S
= - 497A
I
S
= - 497A
V
R
= 333V
di
S
/dt = 600A/µs
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
15.6
60
Min
Typ
Max
497
371
1.3
18
300
600
Unit
A
V
V/ns
ns
µC
APTM50UM09FAG Rev 3 August, 2017
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
V
R
V
DSS
T
j
150°C
I
S
- 497A di/dt
700A/µs
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2–7
APTM50UM09FAG
Thermal and package characteristics
Symbol
V
ISOL
T
J
T
JOP
T
STG
T
C
Torque
Wt
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Recommended junction temperature under switching conditions
Storage Temperature Range
Operating Case Temperature
To Heatsink
M6
Mounting torque
For teminals
M5
Package Weight
Min
4000
-40
-40
-40
-40
3
2
Max
150
T
J
max -25
125
125
5
3.5
300
Unit
V
°C
N.m
g
Package outline
(dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
www.microsemi.com
3–7
APTM50UM09FAG Rev 3 August, 2017
APTM50UM09FAG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.03
Thermal Impedance (°C/W)
0.025
0.02
0.015
0.01
0.005
0.9
0.7
0.5
0.3
0.1
0.05
0.0001
0.001
Single Pulse
0.01
0.1
1
10
0
0.00001
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
1200
V
GS
=10&15
V
7.5V
1080
I
D
, Drain Current (A)
7V
Transfert Characteristics
V
DS
> I
D
(on)xR
DS
(on)MAX
250µs pulse test @ < 0.5 duty cycle
960
840
720
600
480
360
240
120
0
0
I
D
, Drain Current (A)
900
6.5V
600
6V
300
T
J
=25°C
T
J
=125°C
5.5V
5V
T
J
=-55°C
0
0
5
10
15
20
25
V
DS
, Drain to Source Voltage (V)
R
DS
(on) vs Drain Current
I
D
, DC Drain Current (A)
1
2
3
4
5
6
7
8
V
GS
, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
520
R
DS
(on) Drain to Source ON Resistance
1.4
1.3
1.2
1.1
1
0.9
0.8
0
Normalized to
V
GS
=10V @ 248.5A
416
312
208
104
0
V
GS
=10V
V
GS
=20V
180
360
540
720
900
1080
25
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4–7
APTM50UM09FAG Rev 3 August, 2017
I
D
, Drain Current (A)
50
75
100
125
T
C
, Case Temperature (°C)
150
APTM50UM09FAG
R
DS
(on), Drain to Source ON resistance
(Normalized)
Breakdown Voltage vs Temperature
BV
DSS
, Drain to Source Breakdown
Voltage (Normalized)
1.15
ON resistance vs Temperature
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25
50
75 100 125 150
T
J
, Junction Temperature (°C)
Maximum Safe Operating Area
V
GS
=10V
I
D
=248.5A
1.05
0.95
0.85
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
10000
I
D
, Drain Current (A)
V
GS
(TH), Threshold Voltage
(Normalized)
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
T
C
, Case Temperature (°C)
1000
limited by R
DSon
100 us
100
Single pulse
T
J
=150°C
T
C
=25°C
1
1 ms
10 ms
10
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
V
GS
, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
Ciss
C, Capacitance (pF)
Coss
10000
Gate Charge vs Gate to Source Voltage
14
12
10
8
6
4
2
0
0
250
500
750 1000 1250 1500
Gate Charge (nC)
APTM50UM09FAG Rev 3 August, 2017
I
D
=497A
T
J
=25°C
V
DS
=100V
V
DS
=250V
V
DS
=400V
1000
Crss
100
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
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5–7
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