型号
- 型号
- 关键词
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
厂商名称：Microsemi
厂商官网：https://www.microsemi.com
下载文档| 型号 | ARF448B | ARF448A |
|---|---|---|
| 描述 | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN |
| 是否Rohs认证 | 不符合 | 不符合 |
| 零件包装代码 | TO-247AD | TO-247AD |
| 包装说明 | TO-247, 3 PIN | TO-247, 3 PIN |
| 针数 | 3 | 3 |
| Reach Compliance Code | unknown | unknown |
| 其他特性 | HIGH RELIABILITY | HIGH RELIABILITY |
| 外壳连接 | SOURCE | SOURCE |
| 配置 | SINGLE | SINGLE |
| 最小漏源击穿电压 | 450 V | 450 V |
| 最大漏极电流 (Abs) (ID) | 15 A | 15 A |
| 最大漏极电流 (ID) | 15 A | 15 A |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 100 pF | 100 pF |
| 最高频带 | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND |
| JEDEC-95代码 | TO-247 | TO-247 |
| JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 |
| JESD-609代码 | e0 | e0 |
| 元件数量 | 1 | 1 |
| 端子数量 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C |
| 最低工作温度 | -55 °C | -55 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL |
| 最小功率增益 (Gp) | 13 dB | 13 dB |
| 认证状态 | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE |
| 晶体管应用 | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON |
| 最大关闭时间（toff） | 65 ns | 65 ns |
| 最大开启时间（吨） | 25 ns | 25 ns |
| Base Number Matches | 1 | 1 |