AT-31011, AT-31033
Low Current, High Performance NPN
Silicon Bipolar Transistor
Data Sheet
Description
Avago’s AT-31011 and AT-31033 are high performance
NPN bipolar transistors that have been optimized for op-
eration at low voltages, making them ideal for use in bat-
tery powered applications in wireless markets. The AT-
31033 uses the 3 lead SOT-23, while the AT-31011 places
the same die in the higher performance 4 lead SOT-143.
Both packages are industry standards compatible with
high volume surface mount assembly techniques.
The 3.2 micron emitter-to-emitter pitch and reduced
parasitic design of these transistors yields extremely high
performance products that can perform a multiplicity
of tasks. The 10 emitter finger interdigitated geometry
yields an extremely fast transistor with low operating
currents and reasonable impedances.
Optimized performance at 2.7 V makes these devices
ideal for use in 900 MHz, 1.9 GHz, and 2.4 GHz battery
operated systems as an LNA, gain stage, buffer, oscilla-
tor, or active mixer. Applications include cellular and PCS
handsets as well as Industrial-Scientific-Medical systems.
Typical amplifier designs at 900 MHz yield 1.3 dB noise
figures with 11 dB or more associated gain at a 2.7 V, 1
mA bias. Moderate output power capability (+9 dBm
P
1dB
) coupled with an excellent noise figure yields high
dynamic range for a microcurrent device. High gain ca-
pability at 1 V 1 mA makes these devices a good fit for 900
,
MHz pager applications.
The AT-3 series bipolar transistors are fabricated using
an optimized version of Avago’s 10 GHz f
T
, 30 GHz f
max
Self-Aligned-Transistor (SAT) process. The die are nitride
passivated for surface protection. Excellent device uni-
formity, performance and reliability are produced by the
use of ion-implantation, self-alignment techniques, and
gold metalization in the fabrication of these devices.
Features
•
High Performance Bipolar Transistor Optimized for
Low Current, Low Voltage Operation
•
900 MHz Performance:
AT-31011: 0.9 dB NF, 13 dB G
A
AT-31033: 0.9 dB NF, 11 dB G
A
•
Characterized for End-Of-Life Battery Use (2.7 V)
•
SOT-143 SMT Plastic Package
•
Tape-And-Reel Packaging Option Available
•
Lead-free
Pin Connections and Package Marking
EMITTER COLLECTOR
310x
BASE
EMITTER
SOT-143 (AT-31011)
COLLECTOR
310x
BASE
EMITTER
SOT-23 (AT-31033)
Notes:
Top View. Package Marking provides orientation and identification.
"x" is the date code.
AT-31011, AT-31033 Absolute Maximum Ratings
Symbol
V
EBO
V
CBO
V
CEO
I
C
P
T
T
j
T
STG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
[2,3]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute Maximum
[1]
1.5
11
5.5
16
150
150
-65 to 150
Thermal Resistance
[2]
:
θ
jc
= 550°C/W
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. T
Mounting Surface
= 25°C.
3. Derate at 1.82 mW/°C for T
C
> 67.5°C.
Electrical Specifications, T
A
= 25°C
AT-31011
Symbol
NF
G
A
h
FE
I
CBO
I
EBO
AT-31033
Max
1.2
[1]
9
[2]
300
70
0.05
0.1
Parameters and Test Conditions
Noise Figure
V
CE
= 2.7 V, I
C
= 1 mA
Associated Gain
V
CE
= 2.7 V, I
C
= 1 mA
Forward Current
Transfer Ratio
Collector Cutoff Current
Emitter Cutoff Current
f = 0.9 GHz
f = 0.9 GHz
V
CE
= 2.7 V
I
C
= 1 mA
V
CB
= 3 V
V
EB
= 1 V
Units
dB
dB
-
µA
µA
Min
Typ
0.9
[1]
Min
Typ
0.9
[2]
11
[2]
Max
1.2
[2]
11
[1]
70
13
[1]
300
0.2
1.5
0.05
0.1
0.2
1.5
Notes:
1. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.4 dB; output loss = 0.4 dB.
2. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.4 dB; output loss = 0.4 dB.
V
BB
W = 10 L = 1860
1000 pF
W = 10 L = 1000
W = 30 L = 100
W = 30 L = 100
V
CC
W = 10 L = 1860
25
Ω
1000 pF
W = 10 L = 1025
TEST CIRCUIT
BOARD MATL = 0.062" FR-4 (ε = 4.8)
DIMENSIONS IN MILS
TEST CIRCUIT A: W = 20 L = 100
TEST CIRCUIT B: W = 20 L = 200 x 2
NOT TO SCALE
Figure 1. Test Circuit for Noise Figure and Associated Gain. This Circuit is a Compromise Match Between Best Noise Fig-
ure, Best Gain, Stability, a Practical, Synthesizable Match, and a Circuit Capable of Matching Both the AT-305 and AT-310
Geometries.
AT-31011 fig 1
2
Characterization Information, T
A
= 25°C
AT-31011
Symbol
P
1dB
G
1dB
IP
3
|S
21
|
E2
C
CB
AT-31033
Typ
9
13
20
9
0.04
Parameters and Test Conditions
Power at 1 dB Gain Compression (opt tuning)
V
CE
= 2.7 V, I
C
= 10 mA
Gain at 1 dB Gain Compression (opt tuning)
V
CE
= 2.7 V, I
C
= 10 mA
Output Third Order Intercept Point,
V
CE
= 2.7 V, I
C
= 10 mA (opt tuning)
Gain in 50 Ω System; V
CE
= 2.7 V, I
C
= 1 mA
Collector-Base Capacitance
f = 0.9 GHz
f = 0.9 GHz
f = 0.9 GHz
f = 0.9 GHz
V
CB
= 3V, f = 1 MHz
Units
dBm
dB
dBm
dB
pF
Typ
9
15
20
10
0.04
2.5
2
AMPLIFIER NF
25
20
15
10
5
0
1 mA
25
20
NOISE FIGURE (dB)
10 mA
Ga (dB)
1
0.5
0
NF MIN.
1 mA
10 mA
Ga (dB)
1.5
15
10
10 mA
1 mA
5
0
0
0.5
1
1.5
2
2.5
0
0.5
1.0
1.5
2.0
2.5
0
0.5
1.0
1.5
2.0
2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 2. AT-31011 and AT-31033 Minimum Noise
Figure and Amplifier NF
[1]
vs. Frequency and Current
at V
CE
= 2.7 V.
AT-31011 fig 2
Figure 3. AT-31011 Associated Gain at Optimum Noise
Match vs. Frequency and Current at V
CE
= 2.7 V.
AT-31011 fig 3
Figure 4. AT-31033 Associated Gain at Optimum Noise
Match vs. Frequency and Current at V
CE
= 2.7 V.
AT-31011 fig 4
10
8
10 mA
5 mA
20
16
G 1dB (dB)
16
12
P 1dB (dBm)
G 1dB (dB)
6
4
2
0
12
8
4
0
2 mA
5 mA
10 mA
0
0.5
1.0
1.5
2.0
2.5
8
2 mA
2 mA
5 mA
10 mA
1.5
2.0
2.5
4
0
0.5
1.0
0
2 mA
5 mA
10 mA
0
0.5
1.0
1.5
2.0
2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 5. AT-31011 and AT-31033 Power at 1 dB Gain
Compression vs. Frequency and Current at V
CE
= 2.7 V.
AT-31011 fig 5
Figure 6. AT-31011 1 dB Compressed Gain vs. Frequen-
cy and Current at V
CE
= 2.7 V.
AT-31011 fig 6
Figure 7. AT-31033 1 dB Compressed Gain vs. Frequen-
cy and Current at V
CE
= 2.7 V.
AT-31011 fig 7
Note:
1. Amplifier NF represents the noise figure which can be expected in a real circuit representing reasonable reflection coefficients and including
circuit losses.
3
AT-31011, AT-31033 Typical Performance
15
12
P 1dB (dBm)
20
16
20
16
G 1dB (dB)
2 mA
5 mA
10 mA
0
0.5
1.0
1.5
2.0
2.5
10 mA
G 1dB (dB)
9
6
3
0
5 mA
12
8
4
0
12
8
4
0
2 mA
5 mA
10 mA
0
0.5
1.0
1.5
2.0
2.5
2 mA
2 mA
5 mA
10 mA
0
0.5
1.0
1.5
2.0
2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 8. AT-31011 and AT-31033 Power at 1 dB Gain
Compression vs. Frequency and Current at V
CE
= 5 V.
AT-31011 fig 8
Figure 9. AT-31011 1 dB Compressed Gain vs. Frequen-
cy and Current at V
CE
= 5 V.
AT-31011 fig 9
Figure 10. AT-31033 1 dB Compressed Gain vs. Fre-
quency and Current at V
CE
= 5 V.
AT-31011 fig 10
4
5 mA
20
16
5 mA
G 1dB (dB)
20
16
5 mA
2
P 1dB (dBm)
0
2 mA
-2
8
4
0
2 mA
G 1dB (dB)
12
12
8
2 mA
4
0
-4
0
0.5
1.0
1.5
2.0
2.5
0
0.5
1.0
1.5
2.0
2.5
0
0.5
1.0
1.5
2.0
2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 11. AT-31011 and AT-31033 Power at 1 dB Gain
Compression vs. Frequency and Current at V
CE
= 1 V.
AT-31011 fig 11
Figure 12. AT-31011 1 dB Compressed Gain vs. Fre-
quency and Current at V
CE
= 1 V.
AT-31011 fig 12
Figure 13. AT-31033 1 dB Compressed Gain vs. Fre-
quency and Current at V
CE
= 1 V.
AT-31011 fig 13
25
20
Ga
Ga (dBm)
2.5
2.0
NOISE FIGURE (dB)
25
20
15
Ga
10
5
0
-50
NF
2.5
2.0
1.5
1.0
0.5
0
100
0
IM3 (dBc)
IM5 (dBc)
IM7 (dBc)
Ga (dBm)
IM3 (dBc)
15
10
NF
5
0
-50
1.5
1.0
0.5
0
100
NOISE FIGURE (dB)
-20
-40
-60
0
50
0
50
-80
-9
-6
-3
0
3
6
TEMPERATURE (°C)
TEMPERATURE (°C)
POWER PER TONE (dBm)
Figure 14. AT-31011 Noise Figure and Associated Gain
at V
CE
= 2.7 V, I
C
= 1 mA vs. Temperature in Test Circuit,
Figure 1. (Circuit Losses
AT-31011 fig 14
De-embedded)
Figure 15. AT-31033 Noise Figure and Associated Gain
at V
CE
= 2.7 V, I
C
= 1 mA vs. Temperature in Test Circuit,
Figure 1. (Circuit Losses
AT-31011 fig 15
De-embedded)
Figure 16. AT-31011 and AT-31033 Intermodulation
Products vs. Output Power at V
CE
= 2.7 V, I
C
= 10 mA,
900 MHz with Optimal Tuning.
16
AT-31011 fig
4
AT-31011 Typical Scattering Parameters,
V
CE
= 1 V, I
C
= 1 mA, Common Emitter, Z
O
= 50 Ω
Freq.
GHz
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
Mag
0.95
0.92
0.81
0.79
0.66
0.60
0.57
0.51
0.45
0.45
0.49
S
11
Ang
-8
-34
-60
-66
-94
-110
-119
-139
-167
153
120
dB
11.12
10.58
9.74
9.33
8.02
7.18
6.76
5.56
4.22
2.30
0.73
S
21
Mag
3.60
3.38
3.07
2.93
2.52
2.28
2.18
1.90
1.63
1.30
1.09
Ang
174
150
130
125
104
93
87
74
57
36
17
dB
-37.91
-24.67
-20.67
-20.03
-18.34
-17.95
-17.73
-17.69
-17.95
-18.33
-17.33
S
12
Mag
0.01
0.06
0.09
0.10
0.12
0.13
0.13
0.13
0.13
0.12
0.14
30
Ang
85
68
53
50
36
30
27
22
19
22
32
Mag
0.999
0.94
0.89
0.88
0.80
0.76
0.74
0.71
0.67
0.64
0.62
S
22
Ang
-3
-15
-25
-27
-36
-40
-42
-46
-51
-62
-72
AT-31011 Typical Noise Parameters,
Common Emitter, Z
O
= 50 Ω, 1 V, I
C
= 1 mA
Freq
GHz
0.5
[2]
0.9
1.8
2.4
GAIN (dB)
F
min[1]
dB
0.5
0.6
1.1
1.6
Γ
OPT
Mag
0.90
0.85
0.68
0.55
Ang
13
29
67
98
R
n
0.85
0.73
0.46
0.28
20
MSG
10
S21
MAG
Notes:
1. Matching constraints may make F
min
values associated with high |Γ
OPT
| values unachievable
in physical circuits. See Figure 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
0
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 17. AT-31011 Gains vs. Frequency at V
CE
= 1 V,
I
C
= 1 mA.
AT-31011 fig 17
AT-31033 Typical Scattering Parameters,
V
CE
= 1 V, I
C
= 1 mA, Common Emitter, Z
O
= 50 Ω
Freq.
GHz
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
Mag
0.94
0.87
0.70
0.66
0.46
0.36
0.31
0.22
0.16
0.23
0.33
S
11
Ang
-7
-34
-58
-64
-90
-106
-117
-143
166
101
67
dB
11.16
10.37
9.17
8.69
7.11
6.16
5.66
4.48
3.19
1.39
0.05
S
21
Mag
3.61
3.30
2.87
2.72
2.27
2.03
1.92
1.67
1.44
1.17
1.01
Ang
173
144
121
115
92
81
74
62
46
25
9
dB
-35.95
-22.84
-19.06
-18.49
-16.94
-16.40
-16.06
-15.50
-14.34
-11.85
-9.11
S
12
Mag
0.02
0.07
0.11
0.12
0.14
0.15
0.16
0.17
0.19
0.26
0.35
30
Ang
85
68
56
53
45
43
42
42
44
46
41
Mag
0.999
0.92
0.85
0.83
0.74
0.70
0.68
0.66
0.63
0.60
0.56
S
22
Ang
-3
-17
-27
-29
-37
-40
-42
-45
-50
-62
-77
AT-31033 Typical Noise Parameters,
Common Emitter, Z
O
= 50 Ω, 1 V, I
C
= 1 mA
Γ
OPT
Freq
F
min[1]
GHz
dB
Mag
[2]
0.5
0.5
0.90
0.9
0.6
0.82
1.8
1.1
0.57
2.4
1.6
0.41
R
n
0.70
0.60
0.38
0.22
20
Ang
12
28
68
100
GAIN (dB)
MSG
10
MAG
S21
0
0
1
2
3
4
MSG
5
Notes:
1. Matching constraints may make F
min
values associated with high |Γ
OPT
| values unachievable
in physical circuits. See Figure 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
FREQUENCY (GHz)
Figure 18. AT-31033 Gains vs. Frequency at V
CE
= 1 V,
I
C
= 1 mA.
AT-31011 fig 18
5
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