Up to 6 GHz Low Noise
Silicon Bipolar Transistor
Technical Data
AT-41485
Features
• Low Noise Figure:
1.4 dB Typical at 1.0 GHz
1.7 dB Typical at 2.0 GHz
• High Associated Gain:
18.5 dB Typical at 1.0 GHz
13.5 dB Typical at 2.0 GHz
• High Gain-Bandwidth
Product:
8.0 GHz Typical f
T
diate sized transistor with imped-
ances that are easy to match for
low noise and moderate power
applications. Applications include
use in wireless systems as an LNA,
gain stage, buffer, oscillator, and
mixer. An optimum noise match
near 50
Ω
at 900 MHz, makes this
device easy to use as a low noise
amplifier.
The AT-41485 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz f
T
Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
85 Plastic Package
Description
Hewlett-Packard’s AT-41485 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-41485 is housed in a low cost
.085" diameter plastic package.
The 4 micron emitter-to-emitter
pitch enables this transistor to be
used in many different functions.
The 14 emitter finger interdigi-
tated geometry yields an interme-
5965-8926E
4-124
AT-41485 Absolute Maximum Ratings
Symbol
V
EBO
V
CBO
V
CEO
I
C
P
T
T
j
T
STG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
[2,3]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum[
1]
1.5
20
12
60
500
150
-65 to 150
Thermal Resistance
[2,4]
:
θ
jc
= 155°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 6.5 mW/°C for T
C
> 73°C.
4. See MEASUREMENTS section
“Thermal Resistance” for more
information.
Electrical Specifications, T
A
= 25°C
Symbol
|S
21E
|
2
P
1 dB
G
1 dB
NF
O
Parameters and Test Conditions
Insertion Power Gain; V
CE
= 8 V, I
C
= 25 mA
Power Output @ 1 dB Gain Compression
V
CE
= 8 V, I
C
= 25 mA
1 dB Compressed Gain; V
CE
= 8 V, I
C
= 25 mA
Optimum Noise Figure: V
CE
= 8 V, I
C
= 10 mA
f = 1.0 GHz
f = 2.0 GHz
f = 2.0 GHz
f = 2.0 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
Units
dB
dBm
dB
dB
Min.
Typ. Max.
17.5
11.5
18.5
14.0
1.4
1.7
3.0
18.5
13.5
9.5
8.0
30
150
270
0.2
1.0
1.8
G
A
Gain @ NF
O
; V
CE
= 8 V, I
C
= 10 mA
dB
17.5
f
T
h
FE
I
CBO
I
EBO
C
CB
Gain Bandwidth Product: V
CE
= 8 V, I
C
= 25 mA
Forward Current Transfer Ratio; V
CE
= 8 V, I
C
= 10 mA
Collector Cutoff Current; V
CB
= 8 V
Emitter Cutoff Current; V
EB
= 1 V
Collector Base Capacitance
[1]
: V
CB
= 8 V, f = 1 MHz
GHz
—
µA
µA
pF
0.25
Notes:
1. For this test, the emitter is grounded.
4-125
AT-41485 Typical Performance, T
A
= 25°C
24
21
18
GAIN (dB)
15
12
9
6
NF
50
Ω
G
A
24
P
1 dB
(dBm)
16
15
20
2.0 GHz
4.0 GHz
14
GAIN (dB)
13
12
G
A
10 V
6V
4V
16
8
6
G
1 dB
(dB)
NF (dB)
4
NF
O
P
1dB
2.0 GHz
12
4.0 GHz
4
4V
6V
10 V
NF
O
3
2
1
8
G
1dB
3
0
0.5
1.0
2.0
2
0
3.0 4.0 5.0
4
0
10
20
30
40
0
10
20
30
40
FREQUENCY (GHz)
I
C
(mA)
I
C
(mA)
Figure 1. Noise Figure and Associated
Gain vs. Frequency.
V
CE
= 8 V, I
C
= 10mA.
Figure 2. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Frequency. V
CE
= 8 V.
Figure 3. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Collector Voltage. f = 2.0 GHz.
16
14
12
GAIN (dB)
GAIN (dB)
10
8
G
A
4.0 GHz
2.0 GHz
40
35
30
25
20
15
|S
21E
MAG
|
2
20
1.0 GHz
16
|S
21E
|
2
GAIN (dB)
MSG
12
2.0 GHz
NF
O
(dB)
4.0 GHz
NF
O
2.0 GHz
6
4
2
0
8
4.0 GHz
10
5
0
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
4
0
10
20
30
40
0
0
10
20
30
40
I
C
(mA)
I
C
(mA)
Figure 4. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Frequency. V
CE
= 8 V.
Figure 5. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
CE
= 8 V, I
C
= 25 mA.
Figure 6. Insertion Power Gain vs.
Collector Current and Frequency.
V
CE
= 8 V.
4-126
NF
O
(dB)
AT-41485 Typical Scattering Parameters,
Common Emitter,
Z
O
= 50
Ω,
T
A
= 25°C, V
CE
= 8 V, I
C
Freq.
S
11
GHz
Mag.
Ang.
0.1
.74
-40
0.5
.61
-126
1.0
.57
-161
1.5
.57
-180
2.0
.58
166
2.5
.59
160
3.0
.61
150
3.5
.62
142
4.0
.62
134
4.5
.62
125
5.0
.63
115
5.5
.65
103
6.0
.69
92
= 10 mA
dB
28.2
21.9
16.6
13.4
11.0
9.3
7.7
6.4
5.3
4.3
3.5
2.7
1.8
S
21
Mag.
25.80
12.46
6.80
4.67
3.55
2.92
2.42
2.09
1.84
1.65
1.50
1.37
1.24
Ang.
156
108
87
75
64
59
50
41
32
24
15
6
-4
dB
-35.6
-29.2
-27.9
-25.7
-24.5
-23.3
-21.9
-20.8
-19.5
-18.4
-17.2
-16.1
-15.3
S
12
Mag.
.017
.035
.040
.052
.060
.068
.080
.091
.106
.120
.138
.157
.172
S
22
Ang.
81
44
38
47
54
58
63
61
59
57
54
49
46
Mag.
.93
.57
.46
.43
.41
.40
.39
.41
.42
.43
.44
.43
.40
Ang.
-14
-31
-33
-34
-38
-39
-46
-54
-62
-67
-73
-78
-86
AT-41485 Typical Scattering Parameters,
Common Emitter,
Z
O
= 50
Ω,
T
A
= 25°C, V
CE
= 8 V, I
C
Freq.
S
11
GHz
Mag.
Ang.
0.1
.55
-68
0.5
.58
-153
1.0
.58
-177
1.5
.58
169
2.0
.60
158
2.5
.60
153
3.0
.63
147
3.5
.64
140
4.0
.64
133
4.5
.64
125
5.0
.64
115
5.5
.66
105
6.0
.70
94
= 25 mA
dB
32.0
23.1
17.4
14.0
11.6
9.8
8.1
6.9
5.8
4.8
4.0
3.2
2.4
S
21
Mag.
40.01
14.20
7.39
5.01
3.78
3.09
2.55
2.21
1.94
1.74
1.58
1.45
1.32
Ang.
146
99
82
71
61
58
48
39
31
23
14
5
-5
dB
-40.9
-32.7
-29.8
-27.3
-24.6
-23.7
-21.7
-20.7
-19.4
-18.1
-17.1
-15.9
-15.1
S
12
Mag.
.009
.023
.032
.043
.059
.065
.082
.092
.107
.125
.140
.160
.175
S
22
Ang.
57
52
63
60
64
71
68
67
65
63
56
50
47
Mag.
.85
.47
.41
.39
.38
.36
.35
.37
.39
.40
.41
.40
.37
Ang.
-19
-29
-28
-30
-36
-39
-47
-56
-64
-71
-78
-82
-91
A model for this device is available in the DEVICE MODELS section.
AT-41485 Noise Parameters:
V
CE
= 8 V, I
C
= 10 mA
Freq.
GHz
0.1
0.5
1.0
2.0
4.0
NF
O
dB
1.3
1.3
1.4
1.7
3.0
Γ
opt
Mag
.12
.10
.06
.25
.48
Ang
5
25
50
172
-131
R
N
/50
0.17
0.17
0.16
0.16
0.24
4-127
85 Plastic Package Dimensions
.020
.51
EMITTER
4
0.143
±
0.015
3.63
±
0.38
414
45°
1
BASE
3
COLLECTOR
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx =
±
0.005
mm .xx =
±
0.13
EMITTER
.085
2.15
2
.060
±
.010
1.52
±
.25
5° TYP.
.006
±
.002
.15
±
.05
.07
0.43
.286
±
.030
7.36
±
.76
4-128
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