ATA2536T
Low-voltage IR Receiver ASSP
DATASHEET
Features
●
Highly integrated device with no external components except PIN diode
●
Supply-voltage range: 2.7V to 5.5V
●
High sensitivity due to automatic sensitivity adaptation (AGC) and automatic strong
signal adaptation (ATC)
●
Automatic supply voltage adaptation
●
High immunity against disturbances from daylight and lamps
●
Small size and innovative pad layout
●
Available for carrier frequencies between 36kHz to 40kHz
●
TTL and CMOS compatible
Applications
●
Home entertainment applications
●
Home appliances
●
Remote control equipment
9226C-AUTO-05/14
1.
Description
The Atmel
®
IC ATA2536T is a complete IR receiver for data communication developed and optimized for use in carrier-
frequency-modulated transmission applications. The IC combines small size with high sensitivity as well as high suppression
of noise from daylight and lamps. An innovative and patented pad layout offers unique flexibility for assembly of IR receiver
modules. The Atmel ATA2536T is recommended in LCD TV application (noise environment by backlight interference) with
IR protocols using 375µs maximum burst length of data bits, available with standard frequencies (36, 37, 38, 40kHz) and 3
different noise suppression regulation types (standard, lamp, short burst). The ATA2536T operates in a supply voltage range
of 2.7V to 5.5V.
The function of the Atmel ATA2536T can be described using the block diagram of
Figure 1-1 on page 2.
The input stage has
two main functions. Firstly, it provides a suitable bias voltage for the PIN diode. Secondly, the pulsed photo-current signals
are transformed into a voltage by a special circuit, which is optimized for low noise applications. After amplification by a
Controlled Gain Amplifier (CGA), the signals have to pass a tuned integrated narrow bandpass filter with a center frequency
f
0
, which is equivalent to the chosen carrier frequency of the input signal. The demodulator is used to convert the input burst
signal to a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be
suppressed at the output pin. All this is done by means of an integrated dynamic feedback circuit, which varies the gain as a
function of the present environmental conditions (ambient light, modulated lamps etc.). Other special features are used to
adapt to the current application to secure best transmission quality.
Figure 1-1. Block Diagram
VS
IN
Input
CGA and
Filter
Demodulator
OUT
Micro-
controller
Oscillator
Carrier Frequency f
0
AGC/ATC and Digital Control
ATA2536T
Modulated IR Signal
min 6 or 10 Pulses
GND
2
ATA2536T [DATASHEET]
9226C–AUTO–05/14
2.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameter
Supply voltage
Supply current
Input voltage
Input DC current at V
S
= 5V
Output voltage
Output current
Operating temperature
Storage temperature
Power dissipation at T
amb
= 25°C
Symbol
V
S
I
S
V
IN
I
IN
V
O
I
O
T
amb
T
stg
P
tot
Value
–0.3 to +6
3
–0.3 to V
S
0.75
–0.3 to V
S
10
–25 to +85
–40 to +125
30
Unit
V
mA
V
mA
V
mA
°C
°C
mW
ATA2536T [DATASHEET]
9226C–AUTO–05/14
3
3.
No.
1
1.1
1.2
2
2.1
2.2
2.3
2.4
3
3.1
3.2
3.3
Electrical Characteristics, 3-V Operation
Parameters
Supply
Supply-voltage range
Supply current
Output
Internal pull-up resistor
Output voltage low
Output voltage high
Output current clamping
Input
Input DC current
Input DC current
Minimum detection
threshold current
Minimum detection
threshold current with AC
current disturbance
IIN_AC100 =
3 µA at 100 Hz
I
IN
= –150µA, V
S
= 2.7V
measure V
IN
V
IN
= 0; V
S
= 3V
T
amb
= 25°C
Test signal:
V
S
= 3V
T
amb
= 25°C, I
IN_DC
=1µA
square pp
burst N = 16
f = f
0
; t
PER
= 10ms
BER = 50
(1)
Test signal:
V
S
= 3V, T
amb
= 25°C
I
IN_DC
= 1µA
square pp
burst N = 16
f = f
0
; t
PER
= 10ms
BER = 5%
(1)
I
IN_DCMAX
I
IN_DCMAX
I
Eemin
0
–350
–850
V
µA
pA
B
C
B
R
2
= 0
T
amb
= 25°C
R
2
= 1.4kΩ
R
PU
V
OL
V
OH
I
OCL
V
S
– 0.25
8
40
250
V
S
kΩ
mV
V
mA
A
B
B
B
I
IN
= 0
V
S
I
S
2.7
0.45
3.0
0.6
3.3
0.85
V
mA
C
B
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Type*
T
amb
= –25°C to +85°C, V
S
= 2.7V to 3.3V unless otherwise specified.
3.4
I
Eemin
–1300
pA
C
3.5
Maximum detection
threshold current with
V
IN
> 0V
I
Eemax
–200
µA
D
4
4.1
4.2
4.3
4.4
4.5
4.6
4.7
Notes:
Controlled Amplifier and Filter
Maximum value of variable
V
S
= 3V, T
amb
= 25°C
gain (CGA)
Minimum value of variable
V
S
= 3V, T
amb
= 25°C
gain (CGA)
Total internal
amplification
(2)
Center frequency fusing
accuracy of bandpass
Overall accuracy center
frequency of bandpass
Overall accuracy center
frequency of bandpass
BPF bandwidth
T
amb
= 0 to 70°C
–3dB; f
0
= 38kHz
V
S
= 3V, T
amb
= 25°C
V
S
= 3V, T
amb
= 25°C
0.5% accuracy
G
VARMAX
G
VARMIN
G
MAX
f
03V_FUSE
f
03V
f
03V
B
–2.5
–6.5
–5.5
50
–6
72
f
0
f
0
f
0
4.5
+2.5
+3.5
+3.0
dB
dB
dB
%
%
%
kHz
D
D
D
A
C
C
C
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
2. After transformation of input current into voltage
4
ATA2536T [DATASHEET]
9226C–AUTO–05/14
4.
No.
5
5.1
5.2
6
6.1
6.2
6.3
6.4
7
7.1
7.2
7.3
Electrical Characteristics, 5-V Operation
Parameters
Supply
Supply-voltage range
Supply current
Output
Internal pull-up resistor
Output voltage low
Output voltage high
Output current clamping
Input
Input DC current
Input DC-current
Min. detection threshold
current
Min. detection threshold
current with AC current
disturbance
IIN_AC100 = 3µA at
100Hz
I
IN
= –370µA, V
S
= 4.5V
measure V
IN
V
IN
= 0; V
S
= 5V
T
amb
= 25°C
Test signal:
V
S
= 5V
T
amb
= 25°C
I
IN_DC
= 1µA
square pp
burst N = 16
f = f
0
; t
PER
= 10ms
BER = 50
(1)
Test signal:
V
S
= 5V, T
amb
= 25°C
I
IN_DC
= 1µA
square pp
burst N = 16
f = f
0
; t
PER
= 10ms
BER = 5%
(1)
I
IN_DCMAX
I
IN_DCMAX
I
Eemin
0
–700
–1000
V
µA
pA
B
C
B
R
2
= 0
T
amb
= 25°C
R
2
= 2.4kΩ
R
PU
V
OL
V
OH
I
OCL
V
S
– 0.25
8
40
250
V
S
kΩ
mV
V
mA
C
C
C
C
I
IN
=0
V
S
I
S
4.5
0.5
5.0
0.7
5.5
0.95
V
mA
C
B
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Type*
T
amb
= –25°C to +85°C, V
S
= 4.5V to 5.5V unless otherwise specified.
7.4
I
Eemin
–2000
pA
C
7.5
Max. detection threshold
current with V
IN
> 0V
I
Eemax
–500
µA
D
8
8.1
8.2
8.3
8.4
Controlled Amplifier and Filter
Maximum value of variable
V
S
= 5V, T
amb
= 25°C
gain (CGA)
Minimum value of variable
V
S
= 5V, T
amb
= 25°C
gain (CGA)
Total internal
amplification
(2)
V
S
= 5V, T
amb
= 25°C
G
VARMAX
G
VARMIN
G
MAX
f
05V
50
–6
72
f
03V-FUSE
–
0.5
dB
dB
dB
kHz
D
D
D
C
Resulting center frequency f
0
fused at V
S
= 3V
fusing accuracy
V
S
= 5V, T
amb
= 25°C
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
2. After transformation of input current into voltage
4.1
ESD
2000V HBM; ESD STM5.1-2007, JESD22-A114F 2008, AEC-Q100-002-Ref-D 750V CDM;
ESD STM.5.3.1-1999
4.2
Reliability
Electrical qualification (1000h at 150°C) in molded SO8 plastic package.
ATA2536T [DATASHEET]
9226C–AUTO–05/14
5
电源技术
